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Mitsubishi Electric RD07MUS2BT534J
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Bristol Electronics	RD07MUS2BT534J		50		1	1 $6.72 10 $4.368 100 $3.1362 1000 $3.1362 10000 $3.1362	Buy Now
Quest Components	RD07MUS2BT534J		40			1 $9 10 $4.5 100 $4.5 1000 $4.5 10000 $4.5	Buy Now
MITSUBISHI ELECTRIC RD07MUS2B-T212
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Quest Components	RD07MUS2B-T212		1,520			1 $6 10 $6 100 $6 1000 $3 10000 $3	Buy Now
Mitsubishi Electric RD07MUS2BT512J SILICON RF POWER MOS FET RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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ComSIT USA	RD07MUS2BT512J		2,545			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mitsubishi Electric RD07MUS2B-T234 7W RF power MOSFET
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Win Source Electronics	RD07MUS2B-T234		76,000			1 - 10 - 100 $1.91 1000 $1.602 10000 $1.602	Buy Now

RD07MUS2B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RD07MUS2B Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	PDF	RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
RD07MUS2B Abstract: Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-039-A Date : 10th Oct. ‘08 Rev.date : 30th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V	Original	PDF	AN-900-039-A RD07MUS2B 763-870MHz RD07MUS2B: 084YH-G" RD07MUS2B 870MHz 250mA characteristic1JA01 GRM1882C1H101JA01 Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M
GRM1882C1H100JA01D Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V	Original	PDF	AN-900-040-A RD01MUS1 RD07MUS2B 763-870MHz RD07MUS2B: 086ZE-G" RD01MUS1: RD07MUS2B 250mA GRM1882C1H100JA01D GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D
RD07MUS2B Abstract: RPC10T Single-Stage amplifier GRM2162C1H101GD01E 2306C 135-175MHz GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H430GD01E GRM2162C1H560GD01E Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-047-A Date : 15th Sep. ‘09 Rev. date : 22 th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=135-175 MHz,Vdd=7.2V	Original	PDF	AN-VHF-047-A RD07MUS2B RD07MUS2B: 083YH-G" RD07MUS2B 175MHz 250mA 2302S 2306C RPC10T Single-Stage amplifier GRM2162C1H101GD01E 2306C 135-175MHz GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H430GD01E GRM2162C1H560GD01E
RD07MUS2B Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor	Original	PDF	RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
GRM2162C1H101JA01D Abstract: H1002 Single-Stage amplifier GRM2162C1H120JZ01D GRM2162C1H160JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D GRM2162C1H8R0DZ01D GRM216R11H223KA01E RD07MUS2B Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-041-A Date : 8th Mar. ‘10 Rev.date : 30th Jun. 2010 Prepared : K.IJUIN S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B TETRA single-stage amplifier at f=800-870MHz,Vdd=3.6V SUMMARY: This application note shows the TETRA data .	Original	PDF	AN-900-041-A RD07MUS2B 800-870MHz RD07MUS2B: 086ZE-G" 800MHz, 820MHz, 840MHz, 860MHz, 870MHz, GRM2162C1H101JA01D H1002 Single-Stage amplifier GRM2162C1H120JZ01D GRM2162C1H160JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D GRM2162C1H8R0DZ01D GRM216R11H223KA01E
GRM2162C1H180JZ01D Abstract: RD07MUS2B GRM2162C1H101JA01D GRM2162C1H120JZ01D Single-Stage amplifier GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D murata 897 Mhz AN-UHF-105-A Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-105-A Date : 22th Dec. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B TETRA single-stage amplifier at f=380-430MHz,Vdd=7.2V	Original	PDF	AN-UHF-105-A RD07MUS2B 380-430MHz RD07MUS2B: 086ZE-G" 380MHz, 405MHz, 430MHz, 250mA 18ksps, GRM2162C1H180JZ01D GRM2162C1H101JA01D GRM2162C1H120JZ01D Single-Stage amplifier GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D murata 897 Mhz AN-UHF-105-A
marking 7W 66 Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041 Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15	Original	PDF	RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) Oct2011 marking 7W 66 AN-UHF-105 transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
RD07MUS2B Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053 Text: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.	Original	PDF	RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
AN-UHF-098 Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15	Original	PDF	RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) AN-UHF-098
RD07MUS2B Abstract: GRM2162C1H120GD01E Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H290GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E AN-UHF-098-B gp 219 GP 743 Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-098-B Date : 15th Sep. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B single-stage amplifier	Original	PDF	AN-UHF-098-B RD07MUS2B 400-470MHz RD07MUS2B: 086ZE-G" RD07MUS2B 470MHz 250mA GRM216R11H223KA01E A0603 GRM2162C1H120GD01E Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H290GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E AN-UHF-098-B gp 219 GP 743
350-400MHZ Abstract: GRM2162C1H220JZ01D murata 371 Single-Stage amplifier GRM2162C1H101JA01D GRM2162C1H120JZ01D GRM2162C1H240JZ01D GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-106-A Date : 16th Feb. 2010 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B TETRA single-stage amplifier at f=350-400MHz,Vdd=7.2V	Original	PDF	AN-UHF-106-A RD07MUS2B 350-400MHz RD07MUS2B: 08XXA-G" 350MHz, 375MHz, 400MHz, 250mA 18ksps, GRM2162C1H220JZ01D murata 371 Single-Stage amplifier GRM2162C1H101JA01D GRM2162C1H120JZ01D GRM2162C1H240JZ01D GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D
RD07MUS2B Abstract: f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor	Original	PDF	RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2
7107 GP Abstract: RD07MUS2B Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H240GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E GRM2162C1H9R0DD01E micro strip line Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-096-A Date : 6th Oct. 2008 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B single-stage amplifier	Original	PDF	AN-UHF-096-A RD07MUS2B 450-527MHz RD07MUS2B: 083YH-G" RD07MUS2B 527MHz 250mA 527MHz) 10ohm 7107 GP Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H240GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E GRM2162C1H9R0DD01E micro strip line

RD07MUS2B Abstract: RD07MUS2 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor	Original	PDF	RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) RD07MUS2