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u-blox AG SARA-U270-00S RF TXRX MODULE CELL SMD
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DigiKey	SARA-U270-00S	Reel			250	1 - 10 - 100 - 1000 $29.00016 10000 $29.00016	Buy Now
NexGen Digital	SARA-U270-00S		250			1 - 10 - 100 - 1000 - 10000 -	Get Quote
u-blox AG SARA-U270-03S RF TXRX MODULE CELL SMD
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DigiKey	SARA-U270-03S	Reel			250	1 - 10 - 100 - 1000 $29.00016 10000 $29.00016	Buy Now
u-blox AG SARA-U270-00X RF TXRX MODULE CELL SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SARA-U270-00X	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
u-blox AG SARA-U270-53S RF TXRX MODULE CELL SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SARA-U270-53S	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
u-blox AG SARA-U270
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Bristol Electronics	SARA-U270		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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RAU27 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
rau2 Abstract: 1A011 Text: HY5116160 Series -HYUNDAI 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY5116160 16-bit 16-bit. Y5116160 1AD11-10-MAY95 HY5116160JC HY5116160SLJC rau2 1A011
RAU27 Abstract: rau2 Text: "HYUNDAI HY51V4264B Series 256K x 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY51V42648 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CM O S process technology and advanced circuit design technique to achieve fast	OCR Scan	PDF	HY51V4264B 16-bit HY51V42648 400mil 40pin 4Q/44pin 08mWFLB_ 1AC30-10-MAY95 RAU27 rau2
T23N Abstract: au1017 4100 dram HYS14400 IPC 4104 Text: HYUNDAI ELECTRONICS 3RE D • 4b7S0öö DG00333 T ■ HYNK PRELIMINARY M1A1200A-MAY91 FEATURES DESCRIPTION • Low power dissipation - Operating Current, 100ns : 85mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lntA(max.) • Read-Modify-Write Capability	OCR Scan	PDF	4b750Ã DG0Q333 HY514400 HYS14400 M1A1200A-MAY91 -23-n FEA11 T23N au1017 4100 dram IPC 4104
19N80 Abstract: No abstract text available Text: -HYUNDAI H Y 5 1 V 1 6 1 0 0 A S e r ie s 16M X 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V16100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques	OCR Scan	PDF	HY51V16100A 127BSC 1AD21-00-MAY95 HY51V16100AJ 6100A HY51V16100AT HY51V16100ASLT 19N80
WP-13 Abstract: ta22a DE456 1A039 Text: Y Trt I II N i l A l u n u m 4M X H Y 5 1 V 1 6 4 0 4 A S e r ie s 4-bit CMOS DRAM with Extended Data out DESCRIPTION The HY51V16404A is the new generation and fast dynamic RAM organized 4,194.304 x 4-bit. The HY51V16404A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY51V16404A capa590) 1AD39-KMMAY95 HY51V16404AJ HY51V16404ASLJ HY51V16404AT 51V16404ASLT WP-13 ta22a DE456 1A039
W41J Abstract: IPC 4104 Text: HYUNDAI ELECTRONICS 3RE D • 4b7S0öö DG00333 T ■ HYNK PRELIMINARY M1A1200A-MAY91 FEATURES DESCRIPTION • Low power dissipation - Operating Current, 100ns : 85mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lntA(max.) • Read-Modify-Write Capability	OCR Scan	PDF	DG00333 M1A1200A-MAY91 HY514400 HY514400. 512KX W41J IPC 4104
Untitled Abstract: No abstract text available Text: • • H Y U N D A I H Y 5 1 1 6 4 1 0 A S e r ie s 4M x 4-bit CMOS DRAM with WPB DESCRIPTION The HY5116410A is the new generation and last dynamic RAM organized 4,194,304 x 4-bit. The HY5116410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY5116410A HY5116410A HY5116410Ato performanc00 1AD24-10-MAY94 HY5116410AJ HY5116410ASLJ HY511641 HY5116410ASLT
Ck37 Abstract: No abstract text available Text: • « H Y U N D A I H Y 5 1 4 4 0 0 A S e r ie s 1 Mx 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynam ic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY514400A families075 1AC07-30-MAY95 HY514400AJ HY514400ALJ HY514400AT 4400ALT Ck37
HYUNDAI i10 Abstract: HY514260B MZN 1000 S HY514260BJC ASW10 1AC25-10-MAY95 HY51426 MP331 VH000 gd042s3 Text: H Y 5 1 4 2 6 0 B S e r ie s 256K x 16-bit CMOS DRAM with 2CAS ‘ • H Y U N D A I DESCRIPTION The HY514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access	OCR Scan	PDF	HY514260B 16-bit 400mil 40pin 40/44pin 0063BJ10) 4b750aa HYUNDAI i10 MZN 1000 S HY514260BJC ASW10 1AC25-10-MAY95 HY51426 MP331 VH000 gd042s3