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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6018DPM R07DS0131EJ0200 Rev.2.00 Jun 21, 2012 600V - 30A - MOS FET High Speed Power Switching Features • Low on-resistance RDS on = 0.2  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


    Original     		RJK6018DPM R07DS0131EJ0200 PRSS0003ZA-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6018DPM R07DS0131EJ0200 Rev.2.00 Jun 21, 2012 600V - 30A - MOS FET High Speed Power Switching Features • Low on-resistance RDS on = 0.2  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


    Original     		RJK6018DPM R07DS0131EJ0200 PRSS0003ZA-A PDF