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    QN1012

    Abstract: IPD70N10S3-12 PG-TO252-3-11
    Text: IPD70N10S3-12 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 11.1 mΩ ID 70 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD70N10S3-12 PG-TO252-3-11 QN1012 QN1012 IPD70N10S3-12 PG-TO252-3-11

    QN1012

    Abstract: No abstract text available
    Text: IPD70N10S3-12 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 11.1 mW ID 70 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD70N10S3-12 PG-TO252-3-11 QN1012 QN1012