QD4GB47 Search Results

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Text: SSW/I1N60A Advanced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on =: 1 2 Q ■ Lower Input Capacitance lD = 1 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |jA (Max.) @ VDS = 600V