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California Eastern Laboratories (CEL) NE68730-T1 RF TRANS NPN 3V 11GHZ SOT323
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DigiKey	NE68730-T1	Cut Tape	2,693		1	1 $0.62 10 $0.523 100 $0.4454 1000 $0.43752 10000 $0.43752	Buy Now
California Eastern Laboratories (CEL) NE687M33-A RF TRANS NPN 3V 12GHZ 3SMINMOLD
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DigiKey	NE687M33-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE687M13-A RF TRANS NPN 3V 14GHZ M13
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DigiKey	NE687M13-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE68719-T1 RF TRANS NPN 3V 11GHZ 3SMINMOLD
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DigiKey	NE68719-T1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE687M03-T1-A RF TRANS NPN 3V 14GHZ 3SMINMOLD
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DigiKey	NE687M03-T1-A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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NE687 Datasheets (41)

Part	Manufacturer	Description	Datasheet Type	PDF
NE687	NEC		Original	PDF
NE68700	NEC	NONLINEAR MODEL	Original	PDF
NE68718	NEC	NPN silicon high frequency transistor.	Original	PDF
NE68718	NEC	Semiconductor Selection Guide	Original	PDF
NE68718-T1	NEC		Original	PDF
NE68718-T1-A	California Eastern Laboratories	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68719	NEC	Semiconductor Selection Guide	Original	PDF
NE68719	NEC	NPN silicon high frequency transistor.	Original	PDF
NE68719-T1	California Eastern Laboratories	RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 2GHZ SMD	Original	PDF
NE68719-T1	NEC		Original	PDF
NE68719-T1-A	California Eastern Laboratories	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68730	NEC	Semiconductor Selection Guide	Original	PDF
NE68730	NEC	NPN silicon high frequency transistor.	Original	PDF
NE68730-T1	NEC		Original	PDF

NE68733	NEC	Semiconductor Selection Guide	Original	PDF
NE68733	NEC	NPN silicon high frequency transistor.	Original	PDF
NE68733-T1	NEC		Original	PDF
NE68739	NEC	Semiconductor Selection Guide	Original	PDF
NE68739	NEC	NPN silicon high frequency transistor.	Original	PDF
NE6873939R	NEC		Original	PDF

NE687 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
60E-12 Abstract: NE68719 40E15 Text: NONLINEAR MODEL SCHEMATIC NE68719 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 8.0e-17 MJC 0.53 BF 128 XCJC 0.27 NF 1.0 CJS 0.75 VAF 17 VJS IKF 0.18 MJS ISE 3.3e-15 FC 0.37	Original	PDF	NE68719 0e-17 3e-15 0e-15 415e-12 102e-12 0e-12 26e-12 19e-1es 60E-12 NE68719 40E15
2SC5618 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE687M13 OUTLINE DIMENSIONS Units in mm FEATURES • • HIGH GAIN BANDWIDTH PRODUCT: fT = 11 GHz +0.1 0.5 –0.05 +0.1 0.15 –0.05 0.3 1 2 0.35 XX • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline –	Original	PDF	NE687M13 NE687M13 24-Hour 2SC5618
bjt microwave GHz Abstract: NE68700 026E-12 bjt microwave 15 GHz 026E-9 60E-12 68700 Text: NE68700 NONLINEAR MODEL SCHEMATIC Q1 CCB LB LC CCE LE BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Parameters Q1 Parameters Q1 IS 8.0e-17 MJC 0.53 time Units seconds BF 128 XCJC 0.27 capacitance farads NF 1.0 CJS inductance henries VAF 17 VJS 0.75 resistance	Original	PDF	NE68700 0e-17 3e-15 0e-12 0e-15 26e-12 19e-12 49e-9 70e-9 26e-9 bjt microwave GHz NE68700 026E-12 bjt microwave 15 GHz 026E-9 60E-12 68700
code marking NEC Abstract: date code marking NEC NEC MARKING CODE Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR NE687M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-pin super lead-less minimold package	Original	PDF	NE687M33 NE687M33 NE687M33-T3 PU10342EJ01V0DS code marking NEC date code marking NEC NEC MARKING CODE
M33 TRANSISTOR Abstract: transistor m33 MARKING W2 NE687M33 NE687M33-T3 Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE687M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE687M33 50 pcs (Non reel)	Original	PDF	NE687M33 NE687M33-T3 M33 TRANSISTOR transistor m33 MARKING W2 NE687M33 NE687M33-T3
pt 7313 Abstract: 5252 F 1105 transistor 2SC5618 NE687M13 S21E NF 028 transistor pt 6009 5252 F 1105 Text: NEC's NPN SILICON TRANSISTOR NE687M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 1 0.3 3 0.1 0.125+0.1 ñ0.05 0.1 0.5±0.05 NEC's NE687M13 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited	Original	PDF	NE687M13 NE687M13 pt 7313 5252 F 1105 transistor 2SC5618 S21E NF 028 transistor pt 6009 5252 F 1105
Untitled Abstract: No abstract text available Text: NE68730 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 IS 8e-17 MJC 0.53 time seconds BF 128 XCJC 0.27 capacitance farads	Original	PDF	NE68730 8e-17 3e-15 4e-15 415e-12 102e-12 6e-12 26e-12s 26e-12 19e-12
60E-12 Abstract: 151E9 Text: NE68718 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LC LBX LCX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 8.0e-17 MJC 0.53 BF 128 XCJC 0.27 NF 1.0 CJS VAF 17 VJS 0.75 IKF 0.18 MJS ISE 3.3e-15	Original	PDF	NE68718 0e-17 3e-15 0e-15 415e-12 102e-12 0e-12 26e-12 19e-12 51e-9 60E-12 151E9
SE 7889 Abstract: 2SC5182 2SC5184 2SC5185 2SC5186 NE687 NE68718 NE68719 NE68730 NE68733 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH 19 3 PIN ULTRA SUPER MINI MOLD 18 (SOT 343 STYLE) • HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz • AVAILABLE IN SIX LOW COST PLASTIC SURFACE	Original	PDF	NE687 8739R NE687 SE 7889 2SC5182 2SC5184 2SC5185 2SC5186 NE68718 NE68719 NE68730 NE68733
bjt microwave 15 GHz npn Abstract: 2SC5436 NE687 NE687M03 S21E transistor 1038 BF-104 Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE687M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance	Original	PDF	NE687M03 NE687M03 687M03 26e-12 19e-12 08e-12 12e-9 10e-9 bjt microwave 15 GHz npn 2SC5436 NE687 S21E transistor 1038 BF-104
LB 11911 Abstract: 80500 TRANSISTOR mje 2055 ic 45800 KF 80500 IC 14553 60E-12 KF 80-500 9971 TRANSISTOR C 5706 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SUPER MINI MOLD) 30 (SOT 323 STYLE)	Original	PDF	NE687 NE687 NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 NE68739-T1 NE68739R-T1 24-Hour LB 11911 80500 TRANSISTOR mje 2055 ic 45800 KF 80500 IC 14553 60E-12 KF 80-500 9971 TRANSISTOR C 5706
5252 F 1105 transistor Abstract: pt 7313 5252 F 1105 ic 7313 2SC5618 IB 6405 nec 4814 transistor pt 6009 of IC 9290 NE687M13 Text: NPN SILICON TRANSISTOR NE687M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 1 0.3 3 0.1 0.125+0.1 ñ0.05 0.1 0.5±0.05 The NE687M13 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for	Original	PDF	NE687M13 NE687M13 5252 F 1105 transistor pt 7313 5252 F 1105 ic 7313 2SC5618 IB 6405 nec 4814 transistor pt 6009 of IC 9290
sot26 sot363 transistor Abstract: transistor to6 UPG152TA SSOP20 package 2746 transistor UPG137 UPC8119 NE68730 NE68818 UPC2745 Text: 900MHz NEW! NE68730 Bipolar Transistor • Low noise figure: 1.2 dB typ at 900MHz • Optimum Noise Match: Close to 50 Ohms • Miniature package: 1.25 x 2.0 mm UPC2745/46TB Buffer Amps UPC8112T Downconverter • 3V operation • 13 dB typ Conversion Gain	Original	PDF	900MHz NE68730 UPC2745/46TB UPC8112T 2700MHz 1500MHz OT-363 UPG152TA 30dBm sot26 sot363 transistor transistor to6 UPG152TA SSOP20 package 2746 transistor UPG137 UPC8119 NE68730 NE68818 UPC2745
NE68718A Abstract: ne68718 Text: NPN SILICON RF TRANSISTOR NE68718 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz	Original	PDF	NE68718 NE68718-A NE68718-T1-A NE68718A ne68718

TRANSISTOR C 6090 Abstract: TRANSISTOR C 6090 npn transistor pt 6020 NE687 S21E UPA808T UPA808T-T1 UPA808T-T1-A ic 4790 A 7440 pin transistor Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA808T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE687 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.3 dB TYP at 2 GHz • HIGH GAIN: \|S21E\|2 = 8.5 dB TYP at 2 GHz • LOW CURRENT OPERATION	Original	PDF	UPA808T NE687 UPA808T TRANSISTOR C 6090 TRANSISTOR C 6090 npn transistor pt 6020 S21E UPA808T-T1 UPA808T-T1-A ic 4790 A 7440 pin transistor
BF-104 Abstract: NE687M03 2SC5436 NE687 NE687M03-A NE687M03-T1-A S21E BJT IC Vce Text: NEC's NE687M03 NPN SILICON TRANSISTOR FEATURES • • • OUTLINE DIMENSIONS Units in mm NEW M03 PACKAGE: • Smallest transistor outline package available • Low proﬁle/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT:	Original	PDF	NE687M03 NE687M03 BF-104 2SC5436 NE687 NE687M03-A NE687M03-T1-A S21E BJT IC Vce
LB 11911 Abstract: 80500 TRANSISTOR MJE 2655 2SC5182 2SC5184 2SC5185 2SC5186 NE687 NE68718 cce 7100 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SUPER MINI MOLD) 30 (SOT 323 STYLE)	Original	PDF	NE687 NE687 NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 NE68739-T1 NE68739R-T1 24-Hour LB 11911 80500 TRANSISTOR MJE 2655 2SC5182 2SC5184 2SC5185 2SC5186 NE68718 cce 7100
2 GHz BJT Abstract: 0415E Text: NE68733 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units IS 8e-17 MJC 0.53 time seconds BF 128 XCJC 0.27 capacitance farads	Original	PDF	NE68733 8e-17 3e-15 4e-15 415e-12 102e-12 6e-12 26e-12olts 26e-12 19e-12 2 GHz BJT 0415E
NEC NPN 2SC5653 Abstract: 2SC5653 NE687 NE687M23 S21E Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE687M23 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: – World's smallest transistor package footprint — leads are completely underneath package body – Low profile/0.55 mm package height	Original	PDF	NE687M23 NE687M23 24-Hour NEC NPN 2SC5653 2SC5653 NE687 S21E
TRANSISTOR C 6090 Abstract: TRANSISTOR C 6090 npn NE687 S21E UPA808T UPA808T-T1 7440 pin transistor lb 7610 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA808T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE687 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.3 dB TYP at 2 GHz • HIGH GAIN: \|S21E\|2 = 8.5 dB TYP at 2 GHz • LOW CURRENT OPERATION	Original	PDF	UPA808T NE687 UPA808T 24-Hour TRANSISTOR C 6090 TRANSISTOR C 6090 npn S21E UPA808T-T1 7440 pin transistor lb 7610
2SC5436 Abstract: NE687 NE687M03 S21E BF-104 AF1RC Text: NEC's NE687M03 NPN SILICON TRANSISTOR FEATURES • • • OUTLINE DIMENSIONS Units in mm NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT:	Original	PDF	NE687M03 NE687M03 pa-12 08e-12 12e-9 10e-9 102e-12 2SC5436 NE687 S21E BF-104 AF1RC
169800 Abstract: 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fTof 13 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SU PER MINI MOLD) 30 (SOT 323 STYLE)	OCR Scan	PDF	NE687 OT-143) NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 NE68739-T1 NE68739R-T1 169800 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb
RF NPN POWER TRANSISTOR 2 GHZ Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE687M03 FEATURES OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance	OCR Scan	PDF	NE687M03 NE687M03 RF NPN POWER TRANSISTOR 2 GHZ
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE687M03 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M03 NEW M03 PACKAGE: • S m allest tra n sisto r o u tlin e pa ckag e ava ila ble • Low pro file /0 .5 9 mm package height • Flat lead style fo r be tte r RF p e rfo rm an ce	OCR Scan	PDF	NE687M03 24-Hour

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NE687 Price and Stock

California Eastern Laboratories (CEL) NE68730-T1

California Eastern Laboratories (CEL) NE687M33-A

California Eastern Laboratories (CEL) NE687M13-A

California Eastern Laboratories (CEL) NE68719-T1

California Eastern Laboratories (CEL) NE687M03-T1-A

NE687 Datasheets (41)

NE687 Datasheets Context Search

60E-12

2SC5618

bjt microwave GHz

code marking NEC

M33 TRANSISTOR

pt 7313

Untitled

60E-12

SE 7889

bjt microwave 15 GHz npn

LB 11911

5252 F 1105 transistor

sot26 sot363 transistor

NE68718A

TRANSISTOR C 6090

BF-104

LB 11911

2 GHz BJT

NEC NPN 2SC5653

TRANSISTOR C 6090

2SC5436

169800

RF NPN POWER TRANSISTOR 2 GHZ

Untitled