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    MG8J6ES1

    Abstract: ge 152g K 2056 transistor
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG8J6ES1 Unit in mm High Power Switching Applications Motor Control Applications • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage : v C E s a t = 4.0V (Max.)


    OCR Scan     		PDF 2-64A2A TDT725D 21flcJ3 PW03260796 TjS125 MG8J6ES1 ge 152g K 2056 transistor

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    Abstract: No abstract text available
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG8J6ES1 High Power Switching Applications Motor Control Applications • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage : VCE sat = 4.0V (Max.)


    OCR Scan     		PDF PW03260796