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    PTF080901E Search Results

    PTF080901E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTF080901E Infineon Technologies LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz Original PDF

    PTF080901E Datasheets Context Search

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    PTF080901A

    Abstract: 080901E smd marking PTF ptf080901e resistor 1 ohms philips resistor LDMOS 90W
    Text: Preliminary PTF 080901 LDMOS RF Power Field Effect Transistor 90 W, 860–960 MHz Description Key Features The PTF 080901 is a 90–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF

    LM7805

    Abstract: LM7805 smd 8 pin PTF080901 PTF080901E marking us capacitor pf l1 philips smd 1206 resistor SMD 1206 RESISTOR 100 OHMS smd marking f2 smd marking l5 transistor smd marking ND
    Text: PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF080901 PTF080901 LM7805 LM7805 smd 8 pin PTF080901E marking us capacitor pf l1 philips smd 1206 resistor SMD 1206 RESISTOR 100 OHMS smd marking f2 smd marking l5 transistor smd marking ND

    DD 127 D TRANSISTOR

    Abstract: A90W ptf080901e
    Text: PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF080901 PTF080901 DD 127 D TRANSISTOR A90W ptf080901e