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Infineon Technologies AG PTF080101M-V1 RF MOSFET LDMOS 28V RFP-10
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTF080101M-V1	Reel			500	1 - 10 - 100 - 1000 $9.38778 10000 $9.38778	Buy Now
Infineon Technologies AG PTF080101S-V1 RF MOSFET LDMOS 28V H-32259-2
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DigiKey	PTF080101S-V1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

PTF080101 Datasheets (11)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PTF080101		Infineon Technologies	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ		Original	PDF
PTF080101M		Infineon Technologies	700 MHz to 1000 MHz; Package: PG-RFP-10; Flange Type: Surface Mount; Matching: None; Frequency Band: 450.0 - 960.0 MHz; P_1dB (typ): 10.0 W; Supply Voltage: 28.0 V;		Original	PDF
PTF080101M		Infineon Technologies	Transistor Mosfet 65V 0.18A 10TSSOP		Original	PDF
PTF080101M V1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 10W TSSOP-10		Original	PDF
PTF080101MV1		Infineon Technologies	Transistor Mosfet N-CH 65V 0.18A 10TSSOP		Original	PDF
PTF080101MV1		Infineon Technologies	RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 10W TSSOP-10		Original	PDF
PTF080101S		Infineon Technologies	700 MHz to 1000 MHz; Package: PG:32259; Flange Type: Surface Mount; Matching: Input; Frequency Band: 860.0 - 960.0 MHz; P_1dB (typ): 10.0 W; Supply Voltage: 28.0 V;		Original	PDF
PTF080101S		Infineon Technologies	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ		Original	PDF
PTF080101S V1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 960MHZ H-32259-2		Original	PDF
PTF080101SV1		Infineon Technologies	Transistor Mosfet 65V 2(32259)		Original	PDF
PTF080101SV1		Infineon Technologies	RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 10W H-32259-2		Original	PDF

PTF080101 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TSSOP10 Abstract: TSSOP-10 infineon smd smd transistor infineon PTF080101M Text: Preliminary PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 860 – 960 MHz Description The PTF080101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the 860 to 960 MHz band. This LDMOS device operates at 50% efficiency P–1dB .	Original	PDF	PTF080101M PTF080101M 10-watt PTF080101M* TSSOP-10 TSSOP10 TSSOP-10 infineon smd smd transistor infineon
LM7805 smd 8 pin Abstract: smd transistor marking l7 SMD package marking ab l16 LM7805 smd smd lm7805 transistor smd marking ND BCP56 LM7805 PTF080101M smd transistor marking C14 Text: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in	Original	PDF	PTF080101M PTF080101M 10-watt PG-RFP-10 LM7805 smd 8 pin smd transistor marking l7 SMD package marking ab l16 LM7805 smd smd lm7805 transistor smd marking ND BCP56 LM7805 smd transistor marking C14
LM7805 smd 8 pin Abstract: LM7805 smd smd lm7805 LM7805 M SMD SMD package marking ab l16 JX900 LM7805 05 LM7805 C5 MARKING TRANSISTOR marking us capacitor pf l1 Text: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in	Original	PDF	PTF080101M PTF080101M 10-watt PG-RFP-10 LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 M SMD SMD package marking ab l16 JX900 LM7805 05 LM7805 C5 MARKING TRANSISTOR marking us capacitor pf l1
LM7805 smd Abstract: TRANSISTOR SMD 2X K lm7805 specification transistor smd marking ND BCP56 LM7805 PTF080101S MARKING SMD transistor R11 Text: PTF080101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 – 960 MHz Description The PTF080101S is a 10-watt, internally-matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Thermally-enhanced packaging provides the coolest operation possible.	Original	PDF	PTF080101S PTF080101S 10-watt, LM7805 smd TRANSISTOR SMD 2X K lm7805 specification transistor smd marking ND BCP56 LM7805 MARKING SMD transistor R11
PTF080101 Abstract: PTF080101S Text: Advance Information PTF080101 LDMOS RF Power Field Effect Transistor 10 W, 860–960 MHz Description Features The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.	Original	PDF	PTF080101 PTF080101 PTF080101S
PG-DSO-20 Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M Text: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test	Original	PDF	PG-DSO-20 PG-RFP-10 H-34265-8 H-33265-8 H-30248-2 H-36248-2 H-33288-2 H-31248-2 H-37248-2 H-34288-2 PG-DSO-20 a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
BFG591 amplifier Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23 Text: RF手册第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品恩智浦RF手册令设计更简易恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP	Original	PDF	TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
very simple walkie talkie circuit diagram Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23 Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.	Original	PDF	TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
filter for GPS spice Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode Text: RF手册第14版用于高性能RF产品的应用和设计手册2010年5月恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用恩智浦RF手册令设计更简易恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率	Original	PDF	RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
MPF102 spice model Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for	Original	PDF	te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
double TRANSISTOR SMD MARKING CODE mc Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578 Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.	Original	PDF	TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN double TRANSISTOR SMD MARKING CODE mc walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
blf578 Abstract: MRF6V2300N ic tea 2025 NXP SMD TRANSISTOR MARKING CODE s1 TEA 2025 equivalent blf278 rf amplifier radar amplifier s-band 2SK163 GaN ADS HSMP3814 Text: RF マニュアル第 12版 RF製品用のアプリケーションおよび設計マニュアル 2009年6月ハイパフォーマンス・アナログを体験 NXPの RF マニュアルでRF設計がこれまでになく簡単に『NXPの RF マニュアル』は、今日RF設計者向けに市場に出回っているレファレンス・ツー	Original	PDF	TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN blf578 MRF6V2300N ic tea 2025 NXP SMD TRANSISTOR MARKING CODE s1 TEA 2025 equivalent blf278 rf amplifier radar amplifier s-band 2SK163 GaN ADS HSMP3814
sot-89 BV SMD TRANSISTOR MARKING CODE Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer Text: RFマニュアル第14版 RF製品用のアプリケーションおよび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ	Original	PDF	NXPRF14 JESD204A AEC100 RFBFR90 RFBFQ33 TFF1004HN FMF11070HN sot-89 BV SMD TRANSISTOR MARKING CODE bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
A211801E Abstract: A0912 TMA210 PTFA211801E A091201E "RF Power Transistors" ER 2680 PTF080101M PTF080101S PTF140451E Text: Preliminary Product Selection Guide Preliminary Product Selection Guide Pac kag es ffor or LDMO S RF P ower Tran sistor s and IC s ack age LDMOS Po ans ors ICs RF Power Product Selection Guide TEP AC - Therm al ly -Enh anc ed C er amic TEPA Thermal ally ly-Enh	Original	PDF	H-30248-2 H-36248-2 H-30260-2 H-36260-2 H-30265-2 H-31248-2 H-37248-2 H-31260-2 H-31260-2 H-31265-2 A211801E A0912 TMA210 PTFA211801E A091201E "RF Power Transistors" ER 2680 PTF080101M PTF080101S PTF140451E

Untitled Abstract: No abstract text available Text: Product Brief PTF080601 GSM/EDGE/CDMA RF Power FET The PTF080601 Performance Optimized for EDGE and CDMA2000 applications, the PTF080601 is one of our new line of 860 MHz to 960 MHz devices. Typical EDGE performance for this device delivers 30 W average and 18 dB gain with	Original	PDF	PTF080601 CDMA2000 PTF080601 B134-H8300-X-0-7600