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    PROCESSES Search Results

    PROCESSES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation
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    PROCESSES Price and Stock

    ITT Interconnect Solutions QC65A SPECIAL PROCESSES

    ITT SPECIAL PROCESSES - Virtual or Non-Physical Inventory (Software & Literature) (Alt: QC65A SPECIAL PROCESSES)
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    Avnet Americas QC65A SPECIAL PROCESSES No Container 1
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    ITT Interconnect Solutions QC76B NADCAP SPECIAL PROCESSES

    QC76B NADCAP SPECIAL PROCESSES - Virtual or Non-Physical Inventory (Software & Literature) (Alt: QC76B NADCAP SPECIAL PROCESSES)
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    Avnet Americas QC76B NADCAP SPECIAL PROCESSES No Container 1
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    Carling Technologies TERMINATION-IN-PROCESS

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TERMINATION-IN-PROCESS
    • 1 -
    • 10 $11.66
    • 100 $7.49
    • 1000 $5.55
    • 10000 $5.55
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    Eaton Cutler-Hammer PXDBL-PROCESS-0000A

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com PXDBL-PROCESS-0000A
    • 1 $3809.95
    • 10 $3655.33
    • 100 $3655.33
    • 1000 $3655.33
    • 10000 $3655.33
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    Eaton Cutler-Hammer PXDBL-PROCESS-0S00A

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com PXDBL-PROCESS-0S00A
    • 1 $5875.75
    • 10 $5565.02
    • 100 $5565.02
    • 1000 $5565.02
    • 10000 $5565.02
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    Find more PROCESSES price and stock on Findchips.com

    PROCESSES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XC6502

    Abstract: No abstract text available
    Text: XC6502 Series ETR0336-001 Low Power Supply LDO Regulators •GENERAL DESCRIPTION The XC6502 series are highly precise, low noise, positive voltage LDO regulators manufactured using CMOS processes. The series achieves very low supply current, 1.0 A TYP. and consists of a reference voltage source, an error amplifier,


    Original     		PDF XC6502 ETR0336-001 100mV

    smd diode ua

    Abstract: transistor smd marking 2SC3648
    Text: Transistors SMD Type High-Voltage Switching Applications 2SC3648 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage


    Original     		PDF 2SC3648 250mA smd diode ua transistor smd marking 2SC3648

    DFN1310H4-6

    Abstract: No abstract text available
    Text: BC847CDLP NEW PRODUCT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Ultra Low Profile Package


    Original     		PDF BC847CDLP DFN1310H4-6 J-STD-020C MILSTD-202, DS30817 621-BC847CDLP-7 BC847CDLP-7

    Untitled

    Abstract: No abstract text available
    Text: VLMC310. Vishay Semiconductors Low Current SMD LED PLCC-2 FEATURES • SMD LED with exceptional brightness • Compatible with automatic placement equipment • EIA and ICE standard package • Compatible with infrared, vapor phase and wave solder processes according


    Original     		PDF VLMC310. J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    2DC4672

    Abstract: sot89 "NPN TRANSISTOR"
    Text: 2DC4672 NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Complementary PNP Type Available 2DA1797


    Original     		PDF 2DC4672 2DA1797) OT89-3L J-STD-020 MIL-STD-202, DS31636 621-2DC4672-13 2DC4672-13 2DC4672 sot89 "NPN TRANSISTOR"

    Untitled

    Abstract: No abstract text available
    Text: CRCW0201 e3 www.vishay.com Vishay Lead Pb -free Commodity Thick Film Chip Resistors FEATURES • High volume product suitable for commercial applications • Pure tin solder contacts on Ni barrier layer provides compatibility with lead (Pb)-free and lead containing soldering processes


    Original     		PDF CRCW0201 0603M 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    APT54GA60B

    Abstract: APT54GA60BD30 APT54GA60SD30 MIC4452 SD30
    Text: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise


    Original     		PDF APT54GA60BD30 APT54GA60SD30 APT54GA60B APT54GA60BD30 APT54GA60SD30 MIC4452 SD30

    WK202070

    Abstract: WR40414 wk20207 WR50617 wk4 4r7 MARKING WK4 WK2020 diode WR5 metal oxide resistors IEC60294
    Text: WK / WR Vishay Draloric Metal Oxide Resistors, High Power FEATURES • Rugged metal oxide film • Lead Pb -free solder contacts • Pure tin plating provides compatibility with Lead (Pb)-free and lead containing soldering processes • Compatible with "Restriction of the use of Hazardous


    Original     		PDF 2002/95/EC 08-Apr-05 WK202070 WR40414 wk20207 WR50617 wk4 4r7 MARKING WK4 WK2020 diode WR5 metal oxide resistors IEC60294

    APT36GA60B

    Abstract: APT36GA60S MIC4452 c 1853
    Text: APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -2 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 47 D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT36GA60B APT36GA60S APT36GA60B APT36GA60S MIC4452 c 1853

    prtr5v0u6s

    Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
    Text: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years


    Original     		PDF 2002/95/EC. PMBTA42 PMEG3005EL PMEG6010EP PMR780SN PTVS12VS1UR PZU13y PMBTA42DS PMEG3005ET PMEG6010ER prtr5v0u6s csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY

    APT28GA60BD15

    Abstract: APT6017LLL MIC4452
    Text: APT28GA60BD15 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT28GA60BD15 APT28GA60BD15 APT6017LLL MIC4452

    APT28GA60K

    Abstract: MIC4452
    Text: APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT28GA60K O-220 shift26) APT28GA60K MIC4452

    SD15

    Abstract: APT36GA60B APT36GA60BD15 APT36GA60SD15 MIC4452 400v 20A ultra fast recovery diode J750 1800g TF328
    Text: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT


    Original     		PDF APT36GA60BD15 APT36GA60SD15 SD15 APT36GA60B APT36GA60BD15 APT36GA60SD15 MIC4452 400v 20A ultra fast recovery diode J750 1800g TF328

    APT68GA60B

    Abstract: APT68GA60S MIC4452
    Text: APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT68GA60B APT68GA60S APT68GA60B APT68GA60S MIC4452

    DEVICE MARKING CODE table

    Abstract: BZX84C47 BZX84C43 301 marking code sot-23 BZX84C43-7 Marking Code KEY zener diode marking code 30 Zener Diode SOT-23 marking B BZX84C51 J-STD-020A
    Text: BZX84C43 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE SPICE MODELS: BZX84C43 BZX84C47 BZX84C51 Features • · · · Planar Die Construction 350mW Power Dissipation Zener Voltages from 43V - 51V Ideally Suited for Automated Assembly Processes SOT-23 A · · ·


    Original     		PDF BZX84C43 BZX84C51 350mW BZX84C47 OT-23 OT-23, J-STD-020A DEVICE MARKING CODE table 301 marking code sot-23 BZX84C43-7 Marking Code KEY zener diode marking code 30 Zener Diode SOT-23 marking B BZX84C51 J-STD-020A

    5962F9764101VEA

    Abstract: 5962F9764101VEC 5962F9764101VXC GDIP1-T16 HS0-6254RH-Q HS1-6254RH HS-6254RH HS9-6254
    Text: HS-6254RH Data Sheet August 1999 Radiation Hardened Ultra High Frequency NPN Transistor Array The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides


    Original     		PDF HS-6254RH HS-6254RH 5962F9764101VEA 5962F9764101VEC 5962F9764101VXC GDIP1-T16 HS0-6254RH-Q HS1-6254RH HS9-6254

    draloric ska

    Abstract: SXA0933 SKA Vishay SXA0617 RE53 SXA0411 10R SXA0617 resistor 1k 0617 SXA0922 RC draloric
    Text: SXA Vishay Draloric Metal Oxide Resistors, Standard FEATURES • Rugged metal oxide film • Lead Pb -free solder contacts • Pure tin plating provides compatibility with lead (Pb)-free and lead containing soldering processes • Compatible with "Restriction of the use of Hazardous


    Original     		PDF 2002/95/EC SXA0411 SXA0617 SXA0922 SXA0933 08-Apr-05 draloric ska SXA0933 SKA Vishay SXA0617 RE53 SXA0411 10R SXA0617 resistor 1k 0617 SXA0922 RC draloric

    MRS25

    Abstract: resistor MRS25 12NC ordering code vishay Vishay MRS25 MRS16 MRS2500 MRS25000
    Text: MRS16, MRS25 Vishay BCcomponents Lead Pb -Free Professional Leaded Resistors FEATURES • • • • Professional resistors in small outlines Low noise. Lead (Pb)-free solder contacts Pure tin plating provides compatibility with lead (Pb)-free and lead containing soldering processes


    Original     		PDF MRS16, MRS25 2002/95/EC 08-Apr-05 MRS25 resistor MRS25 12NC ordering code vishay Vishay MRS25 MRS16 MRS2500 MRS25000

    osc xtal 6MHZ

    Abstract: 74FXX BI resistor network XTAL 50MHZ PLL650-06SC PLL650-06SC-R
    Text: PLL650-06 Network LAN Clock FEATURES • • • • • Full CMOS output swing with 40-mA output drive capability. 25-mA output drive at TTL level. Advanced, low power, sub-micron CMOS processes. 25MHz fundamental crystal or clock input. One output fixed at 50MHz


    Original     		PDF PLL650-06 40-mA 25-mA 25MHz 50MHz 75MHz 150mil 50MHz/FS* 75MHz /66MHz+ osc xtal 6MHZ 74FXX BI resistor network XTAL 50MHZ PLL650-06SC PLL650-06SC-R

    Untitled

    Abstract: No abstract text available
    Text: UT54 ACS 153/UT54ACTS153 Radiation-Hardened Quadruple 4 to 1 Multiplexers PINOUTS FEATURES • 16-Pin D IP Top View 1.2n radiation-hardened CMOS - Latchup immune High speed Low power consumption Single 5 volt supply Available QM L Q o r V processes Flexible package


    OCR Scan     		PDF 153/UT54ACTS153 16-pin 16-lead UT54ACS153 UT54ACTS153 153/UT54

    TY 2016 thyristor

    Abstract: Toshiba thyristors TOSHIBA Thyristor
    Text: 5. R ELIA BILITY OF SEM ICONDUCTOR 5.1 to pro ducts are evaluated and when quality and reliability are confirm ed, next step o f the trial mass production proceeds. At the trial mass production step, stability of m anufacturing processes is evaluated p repo n­


    OCR Scan     		PDF

    D2200

    Abstract: No abstract text available
    Text: Ordering number : EN 3 1 5 1 □ 2SB1451/2SD2200 N o . 3151 SA \Y O PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications F e a tu re s - Surface mount type device making the following possible -Reduction in the number of m anufacturing processes for 2SB1451/2SD2200-applied equipment


    OCR Scan     		PDF 2SB1451/2SD2200 2SB1451/2SD2200-applied 2SB1451 D2200 2SR1451

    300WV

    Abstract: dm15 capacitor DM15 mica Z20h
    Text: OTHER PRODUCTS Ceramic Substrate <Our high precision thick film printing technology where Ag-Pd based conductors, low high-frequency loss Ag-Pt based conductors and C u based conductors can be printed on 9 6 % substrates> Short lead time: A n integrated production system encompassing all processes from pattern designing to product completion permits engineering


    OCR Scan     		PDF 200ppm/C M00ppm/C 70ppnVC 300WV dm15 capacitor DM15 mica Z20h

    Vdss 1500V

    Abstract: sanyo horizontal transistor
    Text: 6. UH Ultrahigh Voltage Series UH Series Features and Principal Processes SANYO has developed the UH process and HVMG II (High-Voltage Multi-Gate II) structure employing the features of the ultrahigh withstand voltage bipolar transistor UHVP (Ultrahigh Voltage Planar) process in device


    OCR Scan     		PDF