44-PIN
Abstract: M48T129V M48T129Y
Text: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
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M48T129Y
M48T129V
32-pin
M48T129Y:
M48T129V:
44-PIN
M48T129V
M48T129Y
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M48T512V
Abstract: M48T512Y
Text: M48T512Y M48T512V* 5.0 or 3.3V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS
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M48T512Y
M48T512V*
32-pin,
M48T512Y:
PMDIP32
M48T512V
M48T512Y
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M48T248V
Abstract: M48T248Y t248
Text: M48T248Y M48T248V 5.0 or 3.3V, 1024K TIMEKEEPER SRAM with PHANTOM FEATURES SUMMARY • 5.0V OR 3.3V OPERATING VOLTAGE ■ REAL TIME CLOCK KEEPS TRACK OF TENTHS/HUNDREDTHS OF SECONDS, SECONDS, MINUTES, HOURS, DAYS, DATE OF THE MONTH, MONTHS, and YEARS ■
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M48T248Y
M48T248V
1024K
M48T248Y:
32-pin,
PMDIP32
M48T248V:
M48T248V
M48T248Y
t248
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M40Z300
Abstract: M48Z128 M48Z128V M48Z128Y SOH28
Text: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES
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M48Z128
M48Z128Y,
M48Z128V*
M48Z128:
M48Z128Y:
M48Z128V:
M40Z300
M48Z128
M48Z128V
M48Z128Y
SOH28
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M48T248V
Abstract: M48T248Y
Text: M48T248Y M48T248V 5.0 or 3.3V, 1024K TIMEKEEPER SRAM with PHANTOM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ 5.0V OR 3.3V OPERATING VOLTAGE REAL TIME CLOCK KEEPS TRACK OF TENTHS/HUNDREDTHS OF SECONDS, SECONDS, MINUTES, HOURS, DAYS, DATE OF THE MONTH, MONTHS, AND
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M48T248Y
M48T248V
1024K
M48T248Y:
M48T248V:
M48T248V
M48T248Y
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TSOP40 Flash
Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Text: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS
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M2716
M2732A
M2764A
M27128A
M27256
M27512
450ns,
TSOP40 Flash
m48z32y
M27V512
FDIP24W
M27128A
M2716
M27256
M2732A
M27512
M2764A
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M48Z129V
Abstract: M48Z129Y
Text: M48Z129Y M48Z129V 5.0V OR 3.3V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE
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M48Z129Y
M48Z129V
32-pin
PMDIP32
M48Z129Y:
M48Z129V:
M48Z129V
M48Z129Y
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FDIP24W
Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS
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M2716
450ns,
FDIP24W
M2732A
M2764A
FDIP28W
M27C64A
FDIP24W
M27128A
M2716
M27256
M2732A
M27512
M2764A
M27C256B
M27C64A
M29F040
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M48Z129V
Abstract: M48Z129Y
Text: M48Z129Y M48Z129V 5.0 V or 3.3 V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
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M48Z129Y
M48Z129V
M48Z129Y
M48Z129V:
M48Z129V
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M48Z512A
Abstract: M48Z512AY
Text: M48Z512A M48Z512AY 4 Mb 512K x 8 ZEROPOWER SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER AUTOMATIC POWER-FAIL CHIP DESELECT
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M48Z512A
M48Z512AY
M48Z512A:
M48Z512AY:
PMDIP32
M48Z512A/512AY
M48Z512A
M48Z512AY
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512k 8 sram 3v power supply
Abstract: 512K x 8 bit sram 32 pin M48Z512A M48Z512AY
Text: M48Z512A M48Z512AY 4 Mb 512K x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER AUTOMATIC POWER-FAIL CHIP DESELECT
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M48Z512A
M48Z512AY
M48Z512A:
M48Z512AY:
M48Z512A/512AY
M48Z512AY
512AY
PMDIP32
AI02044
512k 8 sram 3v power supply
512K x 8 bit sram 32 pin
M48Z512A
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M48T129V
Abstract: M48T129Y
Text: M48T129Y M48T129V 5.0 or 3.3 V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded century, year, month, day, date, hours, minutes, and seconds
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M48T129Y
M48T129V
M48T129Y:
M48T129V:
M48T129V
M48T129Y
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THE M48Z
Abstract: No abstract text available
Text: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE
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M48Z512A
M48Z512AY,
M48Z512AV
M48Z512A:
M48Z512AY:
M48Z512AV:
THE M48Z
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Untitled
Abstract: No abstract text available
Text: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
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M48Z512A
M48Z512AY,
M48Z512AV
M48Z512A:
M48Z512AY:
M48Z512AV:
PMDIP32
M48Z512A/Y/V
304-bny
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M48T128V
Abstract: M48T128Y M48T35
Text: M48T128Y M48T128V 3.3V-5V 1 Mb 128K x 8 TIMEKEEPER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS AUTOMATIC POWER-FAIL CHIP DESELECT
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M48T128Y
M48T128V
M48T128Y:
M48T128V:
M48T128Y
M48T128V
M48T128Y)
M48T128V)
AI02245
M48T35
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TSOP32 FOOTPRINT
Abstract: NVRAM 1KB SOH28 PCB FOOTPRINT M41T81 m48t35 M48T86 M48Z128 M48Z128V M48Z128Y M48Z129V
Text: Non-Volatile RAMs KEEP TIME, PROTECT DATA NVRAM products offer fast non-volatile memory solutions up to 16 Mbit density using battery backed SRAM, in both surface mount and through-hole packages. Integrated features include battery and crystal, real time clock, watchdog timer, power-on reset, square wave
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NL-5652
FLNVRAM/1000
TSOP32 FOOTPRINT
NVRAM 1KB
SOH28 PCB FOOTPRINT
M41T81
m48t35
M48T86
M48Z128
M48Z128V
M48Z128Y
M48Z129V
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M48T128V
Abstract: M48T128Y wr100
Text: M48T128Y M48T128V 3.3V-5V 1 Mbit 128Kb x8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS ■ AUTOMATIC POWER-FAIL CHIP DESELECT
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M48T128Y
M48T128V
128Kb
M48T128Y:
M48T128V:
PMDIP32
M48T128V
M48T128Y
wr100
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M48T512V
Abstract: M48T512Y
Text: M48T512Y M48T512V 5.0 or 3.3 V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM Features • Integrated ultra-low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded year, month, day, date, hours, minutes, and seconds ■ Automatic power-fail chip deselect and write
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M48T512Y
M48T512V
M48T512Y:
M48T512V:
M48T512V
M48T512Y
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D 4242
Abstract: M48T35 M48T512V M48T512Y
Text: M48T512Y M48T512V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS AUTOMATIC POWER-FAIL CHIP DESELECT
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M48T512Y
M48T512V
M48T512Y:
M48T512V:
D 4242
M48T35
M48T512V
M48T512Y
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M48Z128
Abstract: M48Z128Y
Text: M48Z128 M48Z128Y CMOS 128K x 8 ZEROPOWER SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER PIN and FUNCTION COMPATIBLE with JEDEC STANDARD 128K x 8 SRAMs
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M48Z128
M48Z128Y
M48Z128:
M48Z128Y:
PMDIP32
M48Z128/128Y
M48Z128
M48Z128Y
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Untitled
Abstract: No abstract text available
Text: M48Z512BV 3.3 V, 4 Mbit 512 K x 8 bit ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles 1 ■ 10 years of data retention in the absence of
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M48Z512BV
PMDIP32
M48Z512BV
304-bit
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Untitled
Abstract: No abstract text available
Text: / T T S C S -TH O M S O N ^ 7 # . KfflttêCœiLliMWDIÊi M48Z512 A M48Z512AY 4 Mb 512K x 8 ZER O PO W ER INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the
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M48Z512
M48Z512AY
M48Z512AY
M48Z512A/512AY512K
M48Z512A,
PMDIP32
PMDIP32
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Untitled
Abstract: No abstract text available
Text: Gì M48Z512A M48Z512AY SCS-THOMSON ¡y 4 Mb 512K x 8 ZEROPOWER SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER AUTOMATIC POWER-FAIL CHIP DESELECT
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M48Z512A
M48Z512AY
M48Z512A:
M48Z512AY:
M48Z512A/512AY
M48Z512A,
PMDIP32
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Untitled
Abstract: No abstract text available
Text: F Z J ^ 7 i SGS-THOMSON M48Z128 K» ô [iL[imMO(êS_ M48Z128Y 1 Mb (128K x 8) ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the
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M48Z128
M48Z128Y
M48Z128:
M48Z128Y:
M48Z128/128Y
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