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    M48T128V Search Results

    M48T128V Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M48T128V STMicroelectronics 3.3V-5V 1 MB (128K x 8) TIMEKEEPER SRAM Original PDF
    M48T128V STMicroelectronics 3.3V-5V 1 Mbit (128Kb x8) TIMEKEEPER SRAM Original PDF
    M48T128V-70PM1 STMicroelectronics 3.3V-5V 1 Mbit (128Kb x 8) TIMEKEEPER SRAM Original PDF
    M48T128V-70PM1 STMicroelectronics Original PDF
    M48T128V-70PM1 STMicroelectronics 5.0 OR 3.3V, 1 Mbit (128 Kb x 8) TIMEKEEPER SRAM Original PDF
    M48T128V-70PM1TR STMicroelectronics Original PDF
    M48T128V-70PM1TR STMicroelectronics 5.0 OR 3.3V, 1 Mbit (128 Kb x 8) TIMEKEEPER SRAM Original PDF
    M48T128V-85PM1 STMicroelectronics NVRAM, NVSRAM, Parallel, 3.3V Supply Voltage, 32-MDIP Original PDF
    M48T128V-85PM1 STMicroelectronics 3.3V-5V 1 Mbit (128Kb x 8) TIMEKEEPER SRAM Original PDF
    M48T128V-85PM1TR STMicroelectronics NVRAM, NVSRAM, Parallel, 3.3V Supply Voltage, 32-MDIP Original PDF
    M48T128V-85PM1TR STMicroelectronics 3.3V, 1 Mbit (128 Kb x 8) TIMEKEEPER SRAM Original PDF
    M48T128VPM STMicroelectronics 3.3V-5V 1 Mbit 128Kb x8 TIMEKEEPER SRAM Original PDF

    M48T128V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M48T128V

    Abstract: M48T128Y M48T35
    Text: M48T128Y M48T128V 3.3V-5V 1 Mb 128K x 8 TIMEKEEPER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		PDF M48T128Y M48T128V M48T128Y: M48T128V: M48T128Y M48T128V M48T128Y) M48T128V) AI02245 M48T35

    M48T128V

    Abstract: M48T128Y wr100
    Text: M48T128Y M48T128V 3.3V-5V 1 Mbit 128Kb x8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS ■ AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		PDF M48T128Y M48T128V 128Kb M48T128Y: M48T128V: PMDIP32 M48T128V M48T128Y wr100

    STMicroelectronics date code format SWITCHING REGULATOR

    Abstract: No abstract text available
    Text: M48T128Y M48T128V 3.3V-5V 1 Mbit 128Kb x 8 TIMEKEEPER SRAM INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		PDF M48T128Y M48T128V 128Kb M48T128Y: M48T128V: PMDIP32 STMicroelectronics date code format SWITCHING REGULATOR

    TIMEKEEPER SRAM

    Abstract: M48T128V M48T128Y 128Kbx8 real time clock with sram
    Text: M48T128Y M48T128V 3.3V-5V 1 Mbit 128Kb x 8 TIMEKEEPER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		PDF M48T128Y M48T128V 128Kb M48T128Y: M48T128V: M48T128Y M48T128V AI02245 A0-A16 TIMEKEEPER SRAM 128Kbx8 real time clock with sram

    M48T128V

    Abstract: M48T128Y
    Text: M48T128Y M48T128V 5.0 or 3.3V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS


    Original     		PDF M48T128Y M48T128V M48T128Y: M48T128V: 32-pin PMDIP32 M48T128V M48T128Y

    M48T128V

    Abstract: M48T128Y circuit diagram of o rtc split ac
    Text: M48T128Y M48T128V 5.0 OR 3.3V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS


    Original     		PDF M48T128Y M48T128V M48T128Y: M48T128V: 32-pin PMDIP32 M48T128V M48T128Y circuit diagram of o rtc split ac

    M48T128V

    Abstract: M48T128Y
    Text: M48T128Y M48T128V* 5.0 or 3.3V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS


    Original     		PDF M48T128Y M48T128V* 32-pin M48T128Y: PMDIP32 M48T128V M48T128Y

    5746

    Abstract: M48T128V M48T128Y
    Text: M48T128Y M48T128V 5.0 or 3.3 V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded year, month, day, date, hours, minutes, and seconds ■ Automatic power-fail chip deselect and WRITE


    Original     		PDF M48T128Y M48T128V M48T128Y: M48T128V: 5746 M48T128V M48T128Y

    M48T128V

    Abstract: M48T128Y
    Text: M48T128Y M48T128V 3.3V-5V 1 Mbit 128Kb x8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS ■ AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		PDF M48T128Y M48T128V 128Kb M48T128Y: M48T128V: PMDIP32 M48T128V M48T128Y

    Untitled

    Abstract: No abstract text available
    Text: M48T128Y M48T128V* 5.0 or 3.3V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE,


    Original     		PDF M48T128Y M48T128V* M48T128Y:

    D 4242

    Abstract: M48T128V M48T128Y M48T35
    Text: M48T128Y M48T128V 3.3V-5V 1 Mb 128K x 8 TIMEKEEPER SRAM PRELIMINARY DATA INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		PDF M48T128Y M48T128V M48T128Y: M48T128V: D 4242 M48T128V M48T128Y M48T35

    M48T128V

    Abstract: M48T128Y
    Text: M48T128Y M48T128V* 5.0 or 3.3V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS


    Original     		PDF M48T128Y M48T128V* 32-pin M48T128Y: PMDIP32 M48T128V M48T128Y

    STMicroelectronics package outline dip

    Abstract: No abstract text available
    Text: M48T128Y M48T128V 3.3V-5V 1 Mbit 128Kb x8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS ■ AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		PDF M48T128Y M48T128V 128Kb M48T128Y: M48T128V: A0-A16 STMicroelectronics package outline dip

    M48T128V

    Abstract: M48T128Y
    Text: M48T128Y M48T128V* 5.0 or 3.3V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE,


    Original     		PDF M48T128Y M48T128V* M48T128Y: M48T128V M48T128Y

    FDIP24W

    Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
    Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS


    Original     		PDF M2716 450ns, FDIP24W M2732A M2764A FDIP28W M27C64A FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040

    TSOP32 FOOTPRINT

    Abstract: NVRAM 1KB SOH28 PCB FOOTPRINT M41T81 m48t35 M48T86 M48Z128 M48Z128V M48Z128Y M48Z129V
    Text: Non-Volatile RAMs KEEP TIME, PROTECT DATA NVRAM products offer fast non-volatile memory solutions up to 16 Mbit density using battery backed SRAM, in both surface mount and through-hole packages. Integrated features include battery and crystal, real time clock, watchdog timer, power-on reset, square wave


    Original     		PDF NL-5652 FLNVRAM/1000 TSOP32 FOOTPRINT NVRAM 1KB SOH28 PCB FOOTPRINT M41T81 m48t35 M48T86 M48Z128 M48Z128V M48Z128Y M48Z129V

    m48t35

    Abstract: NVRAM 1KB M48Z02 M48Z08 M48Z12 M48Z128 M48Z128Y M48Z18 M48Z35 M48Z35V
    Text: ZEROPOWER and TIMEKEEPER NVRAMs BATTERY-BACKED SRAMS, OPTIONAL CLOCK/CALENDAR ZEROPOWER products integrate low power SRAMs with a powerfail control circuit and a long-life lithium battery. The power-fail circuit monitors the external power supply voltage. If this falls below


    Original     		PDF programmable33-3) FLZERO/1198 286-CJ103 m48t35 NVRAM 1KB M48Z02 M48Z08 M48Z12 M48Z128 M48Z128Y M48Z18 M48Z35 M48Z35V

    M48T128Y

    Abstract: STMicroelectronics
    Text: M48T128Y 5.0 V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		PDF M48T128Y M48T128Y STMicroelectronics

    footprint so44

    Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
    Text: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad


    Original     		PDF operat911) D-90449 BRMEMSEL/0699 footprint so44 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi

    K6X8008T2B-UF55

    Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 K6X8008T2B-UF55 m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety

    14270x

    Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 14270x 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02

    PMDIP32

    Abstract: SRAM 8T
    Text: M48T128Y M48T128V SGS-THOMSON RiOO [^ ô l[L[i©¥[^(Q)[RQO©S 3.3V-5V 1 Mb (128K x 8) TIMEKEEPER SRAM PRELIMINARY DATA - INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL - BCD CODED YEAR, MONTH, DAY, DATE,


    OCR Scan     		PDF M48T128Y M48T128V M48T128V: M48T128 M48T128V) PMDIP32 A0-A16 M48T128Y, PMDIP32 SRAM 8T

    Untitled

    Abstract: No abstract text available
    Text: 5 7 . SGS-THOMSON M 48T128Y M 48T128V 3.3V-5V 1Mbit 128Kb x 8 TIMEKEEPER SRAM PRELIMINARY DATA INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS


    OCR Scan     		PDF 48T128Y 48T128V 128Kb 48T128Y: M48T128V:

    Untitled

    Abstract: No abstract text available
    Text: M 48T128Y M 48T128V 3.3V-5V 1Mbit 128Kb x 8 TIMEKEEPER SRAM INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS AUTOMATIC POWER-FAIL CHIP DESELECT


    OCR Scan     		PDF 48T128Y 48T128V 128Kb M48T128Y: M48T128V: DIP32 M48T128Y, M48T128V PMDIP32