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    PMD16K Price and Stock

    Solid State Devices Inc (SSDI) PMD16K80

    Bjt, Npn, 100V, To-3; Transistor Polarity:Npn; No. Of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:200°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:80V; Dc Current Gain Hfe Min:1000Hferohs Compliant: Yes |Solid State PMD16K80
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    Newark PMD16K80 Bulk 25
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    Solid State Devices Inc (SSDI) PMD16K100

    Bjt, Npn, 80V, To-3; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:100V; Power Dissipation Pd:225W; Dc Collector Current:20A; Rf Transistor Case:To-3; No. Of Pins:3Pins; Dc Current Gain Hfe:1000Hfe; Product Range:- Rohs Compliant: Yes |Solid State PMD16K100
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    Newark PMD16K100 Bulk 25
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    Bristol Electronics PMD16K100 52
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    Quest Components PMD16K100 41
    • 1 $4.71
    • 10 $3.454
    • 100 $3.14
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    TDK-Lambda Corporation PMD16K100

    TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,20A I(C),TO-3
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    Quest Components PMD16K100 14
    • 1 $6.87
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    PMD16K100 6
    • 1 $13.5
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    PMD16K100 2
    • 1 $12
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    Lamb Industries PMD16K100

    TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,20A I(C),TO-3
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    Quest Components PMD16K100 7
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    Semtech Corporation PMD16K80

    POWER BIPOLAR TRANSISTOR, 20A I(C), 80V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-3, METAL, 2 PIN
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    Quest Components PMD16K80 7
    • 1 $12.36
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    Find more PMD16K price and stock on Findchips.com

    PMD16K Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PMD16K Central Semiconductor SILICON POWER DARLINGTON TRANSISTORS Scan PDF
    PMD16K LAMBDA Semiconductor Data Book V1 1988 Scan PDF
    PMD16K100 Central Semiconductor SILICON POWER DARLINGTON TRANSISTORS Scan PDF
    PMD16K100 LAMBDA Semiconductor Data Book V1 1988 Scan PDF
    PMD-16K-100 LAMBDA Voltage Regulator Data Book 1988 Scan PDF
    PMD16K-100 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    PMD16K100 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    PMD-16K-100 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    PMD16K100 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    PMD-16K-40 LAMBDA Voltage Regulator Data Book 1988 Scan PDF
    PMD16K-40 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    PMD16K40 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    PMD-16K-40 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    PMD16K40 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    PMD16K60 Central Semiconductor SILICON POWER DARLINGTON TRANSISTORS Scan PDF
    PMD-16K-60 LAMBDA Voltage Regulator Data Book 1988 Scan PDF
    PMD16K-60 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    PMD16K60 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    PMD-16K-60 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    PMD16K60 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    PMD16K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: , Una, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Darlingtion Power Transistor PMD16K80 DESCRIPTION • High DC current gain • Collector-Emitter Sustaining VoltageVcEO(sus)= SOV(Min)


    Original     		PDF PMD16K80 PMD17K80 100mA;

    17K60

    Abstract: 300 W npn darlington power transistors PMD17K pmd16k100 17K80
    Text: PMD16K SERIES PMD17K SERIES NPN PNP w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR PMD16K, PMD17K series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process,


    Original     		PDF PMD16K PMD17K PMD16K, PMD16K60 PMD17K60 PMD16K80 PMD17K80 PMD16K100 PMD17K100 17K60 300 W npn darlington power transistors 17K80

    PMD16K100

    Abstract: PMD16K80 PMD16K60 PMD-16K-100 MIL-STD 833 test method 3015
    Text: Inchange Semiconductor Product Specification PMD16K60/80/100 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・DARLINGTON APPLICATIONS ・Designed for use in power switching application. PINNING See Fig.2 PIN DESCRIPTION


    Original     		PDF PMD16K60/80/100 PMD16K60 PMD16K100 PMD16K80 PMD16K100 PMD16K80 PMD16K60 PMD-16K-100 MIL-STD 833 test method 3015

    transistor wr2

    Abstract: No abstract text available
    Text: <^£.mL-dondu.ctoi ^Pi ., {Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PMD16K100 Silicon NPN Darlingtion Power Transistor DESCRIPTION • High DC current gain • Collector-Emitter Sustaining Voltage-


    Original     		PDF PMD16K100 PMD17K100 100mA transistor wr2

    Untitled

    Abstract: No abstract text available
    Text: ^Eini-Conductoi ^Products., One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Darlingtion Power Transistor PMD16K60 DESCRIPTION • High DC current gain • Collector-Emitter Sustaining VoltageVcEO<sus)= 60V(Min)


    Original     		PDF PMD16K60 PMD17K60 100mA;

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    pmd10K80

    Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
    Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789


    Original     		PDF 2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 pmd10K80 PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


    Original     		PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


    Original     		PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    BD179-10 equivalent

    Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		PDF BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


    Original     		PDF MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943

    TRANSISTOR BC 384

    Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required


    Original     		PDF TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100

    Transistor 2sC1060

    Abstract: 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:


    Original     		PDF BDW46 BDW42/BDW47 220AB BDW42* BDW47* TIP73B TIP74 TIP74A TIP74B Transistor 2sC1060 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59

    17K100

    Abstract: lambda pmd16k100 PMD16K100 PMD17K100 PMD16K 17K80 PMD17K80 PMD16K80 PMD17K
    Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS PMD16K, 17K SERIES 225 WATT 20 AMP CONTINUOUS, 40 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER Collector Emitter Voltage P M D 16K , 17K80 P M D 16K , 17K100 FEATURES • Electrical specifications guaranteed for operating junction temperature range of


    OCR Scan     		PDF PMD16K, 17K100 lambda pmd16k100 PMD16K100 PMD17K100 PMD16K 17K80 PMD17K80 PMD16K80 PMD17K

    lambda pmd16k100

    Abstract: PMD17K100 PMD17K80 PMD16K100 PMD16K PMD16K80 PMD17K PMD17K60 PMD-17K-100
    Text: Data Sheet Central" PMD16K SERIES PMD17K SERIES NPN PNP SILICON POWER DARLINGTON TRANSISTORS Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF PMD16K PMD17K PMD16K/PMD17K 100mA PMD16k60 PMD17K60) PMD16K80 lambda pmd16k100 PMD17K100 PMD17K80 PMD16K100 PMD17K60 PMD-17K-100

    MC7805CK

    Abstract: MC7812Ck MC7815CK MC7824CK LM340K-24 LM7812KC lm7805kc LM340K24 LM7824KC 78h05ck
    Text: Selection of Equivalents for Monolithic Voltage Regulators, Darlington Transistors, Rectifiers and Switching Transistors LAMBDA TYPE * LAS723A LAS723B LAS1000 LAS1100 LAS1405 LAS1406 LAS1408 LAS1410 LAS1412 LAS1415 LAS14U LAS1505 LAS 1506 LAS1508 LAS1510


    OCR Scan     		PDF LAS723A LAS723B LAS1100 LAS1405 LM123K LM223K LM323K SH0323 LAS1406 LAS1408 MC7805CK MC7812Ck MC7815CK MC7824CK LM340K-24 LM7812KC lm7805kc LM340K24 LM7824KC 78h05ck

    NPN Transistor 2N3055 darlington

    Abstract: lambda LAS PMD 1000 stc transistors series 2N3055 4D ic 810 2N3055 series voltage regulator 2N3055 PMD12K40 2N3055-2
    Text: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE T E M P E R A T U R E T c 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range


    OCR Scan     		PDF PMD10K 16amps, PMD-13 PMD-11 PMD-17 NPN Transistor 2N3055 darlington lambda LAS PMD 1000 stc transistors series 2N3055 4D ic 810 2N3055 series voltage regulator 2N3055 PMD12K40 2N3055-2

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C