philips fr 310
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D252 CGY887B 860 MHz, 27.8 dB gain push-pull amplifier Product specification 2001 Nov 27 Philips Semiconductors Product specification 860 MHz, 27.8 dB gain push-pull amplifier FEATURES CGY887B PINNING - SOT115J
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M3D252
CGY887B
OT115J
SCA73
613518/01/pp8
philips fr 310
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philips fr 310
Abstract: BGY588N equivalent
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY588N 550 MHz, 34.5 dB gain push-pull amplifier Product specification Supersedes data of 2000 Feb 14 2001 Oct 22 Philips Semiconductors Product specification 550 MHz, 34.5 dB gain push-pull amplifier
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M3D252
BGY588N
OT115J
SCA73
613518/04/pp8
philips fr 310
BGY588N equivalent
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D252 BGY588N CATV amplifier module Preliminary specification 1999 Jan 07 Philips Semiconductors Preliminary specification CATV amplifier module BGY588N PINNING - SOT115J FEATURES • Excellent linearity
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M3D252
BGY588N
OT115J
BGY588N
SCA61
127167/00/02/pp6
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philips fr 310
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY588N CATV amplifier module Product specification Supersedes data of 1999 Jan 01 1999 Mar 29 Philips Semiconductors Product specification CATV amplifier module BGY588N FEATURES PINNING - SOT115J • Excellent linearity
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M3D252
BGY588N
OT115J
BGY588N
SCA63
125008/00/02/pp8
philips fr 310
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BGY588N
Abstract: BP317 DIN45004B
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY588N CATV amplifier module Product specification Supersedes data of 1999 Mar 29 2000 Feb 14 Philips Semiconductors Product specification CATV amplifier module BGY588N FEATURES PINNING - SOT115J • Excellent linearity
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M3D252
BGY588N
OT115J
603510/03/pp8
BGY588N
BP317
DIN45004B
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gsm interfacing with arm7 processor
Abstract: nikko BP317 UAA3522 VWS22110 interfacing gps gsm GMSK modulator PHILIPS GSM ic HP165XX "VLSI TECHNOLOGY" ARM7TDMI DSP
Text: VWS22110 GSM OneC-GPRS Combining Power and GPRS Capability PCM VBAFE PRAM VITERBI CIPHER & AUDIO IT & TIMER DAI FIFO GM SK DROM FIFO RX ADC OAK+ PROM PLL & CLOCK DRAM The GSM OneC™ is the most integrated single chip solution in the MODE & CONF REG EXCHANGE
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VWS22110
gsm interfacing with arm7 processor
nikko
BP317
UAA3522
interfacing gps gsm
GMSK modulator
PHILIPS GSM ic
HP165XX
"VLSI TECHNOLOGY" ARM7TDMI DSP
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ic la 1260
Abstract: TL 2665 la 315
Text: PHILIPS QBL 4/800 TETRODE for use as H.F. amplifier, modulator or frequency multiplier TETRODE pour utilisation ep amplificatrice H.F., modulatrice ou multiplicatrice de fréquence TETRODE zur Verwendung als HF-Verstärker, Modulator oder Frequenzvervielfacher
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7R51279
QBL4/800
ic la 1260
TL 2665
la 315
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qe08-200
Abstract: qe 08 200 ks philips qe 08/200 qe 200 amplificateur hf 7Z00 QE08/200 2X40 "2x6 w"
Text: PHILIPS QE 08/200 BEAMPOWER TETRODE for use as amplifier, oscillator, frequency multiplier or modulator in A.M., S.S.B. and ,F.M. transmitters TÉTRODE À FAISCEAUX pour utilisation comme amplificatrice, oscillatrice, multlplicatrlce de fréquence ou modulatrlce
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QE08/200
7Z00020
qe08-200
qe 08 200
ks philips
qe 08/200
qe 200
amplificateur hf
7Z00
QE08/200
2X40
"2x6 w"
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TYP 513 309
Abstract: philips fr 310 PXTA14 PMBTA64 Philips Semiconductors Selection Guide BST60 PDTA143 PMBTA14 2PD601A PDTA144
Text: Philips Semiconductors Surface mounted transistors Selection guide GENERAL PURPOSE APPLICATIONS hFE TYPE NUMBER V CEO •c V (mA) fr Plot (mw) min. max. typ (MHz) PAGE NPN BC817 45 500 250 100 600 200 159 BC818 25 500 250 100 600 200 159 BC846 65 100 250
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BC817
BC818
BC846
BC847
BC848
BC868
BCP54
BCP55
BCP56
BCP68
TYP 513 309
philips fr 310
PXTA14
PMBTA64
Philips Semiconductors Selection Guide
BST60
PDTA143
PMBTA14
2PD601A
PDTA144
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HG-52
Abstract: No abstract text available
Text: PHILIPS JP9-15 Forced-air cooled packaged MAGNETRON for pulsed service at a fixed frequency within the range 934-5-9405 Me/s, capable of delivering a peak output power Wqp > 15 kW Timp = 0.1 usee MAGNETRON refroidi par air force, avec aimant incor poré, pour service d'impulsions a une fréquence fixe
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JP9-15
HG-52
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BGY888
Abstract: DIN45004B SC16
Text: D IS C R E T E S E M IC O N D U C T O R S BGY888 CATV amplifier module Preliminary specification File under Discrete Semiconductors, SC16 December 1994 i• Philips Semiconductors PHILIPS P H ILIP S 7110fl2b 0007034 I 83^ This Material Copyrighted By Its Respective Manufacturer
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BGY888
7110fl2b
OT115J2
14UIU
amplif588
711002b
OT115J2.
711D02fc>
BGY888
DIN45004B
SC16
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receiver philips fr 310
Abstract: philips fr 310
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Oct 01 Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Product specification Optical receiver module BGE883BO FEATURES PIN N IN G -S O T115U • Excellent linearity PIN
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T115U
BGE883BO
OT115U
125008/00/02/pp8
receiver philips fr 310
philips fr 310
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BUK416-200AE
Abstract: t7700
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION PINNING - SOT227B PIN 1 2 3 4 QUICK REFERENCE DATA SYMBOL isloi DS ON MAX. MAX. UNIT -200AE 200 63 310 0.035 -200BE 200 55 310 0.045 V A W n PARAMETER BUK416 Drain-source voltage
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BUK416-200AE/BE
BUK416
-200AE
-200BE
OT227B
8UK416-2OO0E
BUK416-200AE
t7700
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TRANSISTOR BC 448 smd
Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors
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BRY61
BRY62
OT143B
TRANSISTOR BC 448 smd
JA101P
smd transistor npn 491
transistor TO-92 bc108
transistor pn2222
BC853B
transistor MPSA77
jc5010 215
BC307 smd
2PB601A
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construction of photo diode
Abstract: diode laser 1310 fiber monomode 4 PIN SOT115
Text: DISCRETE SEMICONDUCTORS D lh m S G iE E Î BGE847BO/FCO; BGE847BO/SCO Optical receiver modules Preliminary specification Philips Sem iconductors 2000 Jan 10 PHILIPS Philips S em ico n d uctors P relim inary sp ecification BGE847BO/FCO; BGE847BO/SCO Optical receiver modules
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BGE847BO/FCO;
BGE847BO/SCO
OT115
OT115Y
construction of photo diode
diode laser 1310 fiber monomode 4 PIN
SOT115
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delay line philips
Abstract: video luminance delay adder SAA7151B SAA7152 SAA7191B CFRQ
Text: b 3E » • ^53^24 DD7ßDb3 ISIC3 74T Philips Semiconductors Video Products Preliminary specification Digital video comb filter DCF SAA7152 NAPC/PHILIPS SEMICOND 1. 2. FEATURES • Com b filter circuit for lum inance and chrom inance separation • A pplicable for standards
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dd76db3
SAA7152
SAA7151B
SAA7191B)
LL27H
delay line philips
video luminance delay adder
SAA7151B
SAA7152
SAA7191B
CFRQ
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receiver philips fr 310
Abstract: AN 6752 ic bge847bo
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BGE847BO/FC Optical receiver module Product specification Supersedes data of 1998 Oct 01 Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Product specification Optical receiver module BGE847BO/FC FEATURES
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BGE847BO/FC
T115W
125008/00/02/pp8
receiver philips fr 310
AN 6752
ic bge847bo
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BAW62
Abstract: No abstract text available
Text: • bbSB'IBl DD2b352 40b « A P X N AMER PHILIPS/DISCRETE BAW62 blE D HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is prim arily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage
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DD2b352
BAW62
DO-35
BAW62
OD-27
DO-35)
7Z66863
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ECG941M
Abstract: ECG941D 9CTI ECG941 T179 456 kHz filter BB3T 3B74 ECG9410
Text: / PHILIPS E 17E C G INC J> b b S B T B û ECG941 ,ECG941 D, ECG941M INTERNALLY-COMPENSATED OPERATIONAL AMPLIFIER semiconductors Features: N o Frequency Compensation Required Short-C ircuit Protection Offset Volta ge N u ll C ap a b ility Large Com m on-M ode and Differential
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ECG941
ECG941
ECG941M
ECG9410
ECG941M
ECG941D
9CTI
T179
456 kHz filter
BB3T
3B74
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ECG992
Abstract: TA-2500
Text: PHILIPS E C G INC 17E Û ECG bb53“i 2 â 000452b 1 Wt J^ ~ 7 ^ ~ 0 5 ^ 0 ECG992 Sem iconductors Features • Wide single supply voltage range or dual supplies 4 Independent Operational Amplifiers 14 13 12 I I 10 9 e — r .2 8 0 "< 7 .ll> MAX. 4V d c to 36V q c
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ECG992
36VDC
18VDC
ECG992
bb5315Ã
15V0C
-15VDC)
CG992
TA-2500
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transistor 1Bp
Abstract: bc847 1gp transistor bc848 1Lp marking code 1gp 1Bp transistor bc846 BC646B bc847c
Text: Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.
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BC846;
BC847;
BC848
BC856;
BC857;
BC858.
BC846
BC846A
BC846B
BC847
transistor 1Bp
1gp transistor
bc848
1Lp marking
code 1gp
1Bp transistor
BC646B
bc847c
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BAW62
Abstract: 1970 oscilloscope T0309 T-03-09
Text: SbE D • 711002b 004031^ 231 M P H I N SbE D PHILIPS INTERNATIONAL BAW62 Jj U O C □ UU 1 r - o 3 ~ o * \ HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is primarily intended for fast logic applications. QUICK REFERENCE DATA
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BAW62
DO-35
OD-27
DO-35)
1970 oscilloscope
T0309
T-03-09
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BFR93AW
Abstract: MBG204 marking G SOT323 Transistor BFR93A
Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR93AW uses the same crystal as the SOT23 version, BFR93A.
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BFR93AW
OT323
BFR93AW
BFR93A.
711002b
711062b
MBG204
marking G SOT323 Transistor
BFR93A
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marking BJp
Abstract: BCX71J f 630 Bkp marking code BCX71H
Text: Philips Semiconductors Product specification PNP general purpose transistors BCX71 series FEATURES PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max, 45 V) 1 base • Low noise. 2 emitter 3 collector APPLICATIONS • Low level, low noise, low frequency applications in
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BCX70
BCX71
BCX71G
BCX71H
BCX71J
BCX71K
marking BJp
f 630
Bkp marking code
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