PH1819-10
Abstract: Bv 42 transistor j73 diode TRANSISTOR BV 32 PH1819
Text: ,z= i-s = -A= =c an AMP company * = .-= - = - Wireless Bipolar Power Transistor, 1OW 1.78 - 1.90 GHz l l l l v2.00 ,744 :lE.SZ Features l PH1819-10 5s: .,4 22 +-, / Designed for Cellular Base Station Applications -30 dBc Typ 3rd IMD at 10 Watts PEP
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PH1819-10
Fld850
PH1819-10
Bv 42 transistor
j73 diode
TRANSISTOR BV 32
PH1819
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POE-15
Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 18801 PH1819-15N bipolar power transistor wacom
Text: * s z E f FEYi = -= -=-= = ,’ E an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz . 15W PH1819-15N v2.00 Features NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 15 Watts PEP
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PH1819-15N
POE-15
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
18801
PH1819-15N
bipolar power transistor
wacom
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Untitled
Abstract: No abstract text available
Text: PH1819-2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)65â V(BR)CBO (V)65 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)13# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0mx @V(CBO) (V) (Test Condition)25
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PH1819-2
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PH1819-45
Abstract: DSAE001132
Text: PH1819-45 Wireless Bipolar Power Transistor 45W, 1805-1880 MHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • NPN silicon microwave power transistor Common emitter Class AB operation Internal input and output impedance matching
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PH1819-45
PH1819-45
DSAE001132
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transistor j5
Abstract: 45W AMP PH1819-45A Wireless power
Text: Wireless Power Transistor 45 Watts 1805-1880 MHz PH1819-45A PH1819-45A Wireless Power Transistor 45 Watts, 1805 - 1880 MHz 1 Features • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor rd -28 dBc Typical 3 IMD at 45 Watts PEP Common Emitter Class AB Operation
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PH1819-45A
PH11819-45A
PH1819-4
100KHz
1805MHz
1842MHz
1880MHz
transistor j5
45W AMP
PH1819-45A
Wireless power
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Solutions
Abstract: PH1819-10
Text: PH1819-10 Wireless Bipolar Power Transistor 10W, 1.78-1.90 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • Designed for cellular base station applications -30 dBc typ. 3rd IMD at 10 W PEP Common emitter configuration
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PH1819-10
Solutions
PH1819-10
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PH1819-4N
Abstract: 1850 transistor
Text: PH1819-4N Wireless Bipolar Power Transistor 4W, 1.78-1.90 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • • • NPN silicon microwave power transistor Designed for linear amplifier applications Class AB: -34 dBc typ. 3rd IMD at 4 W PEP
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PH1819-4N
PH1819-4N
1850 transistor
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33w NPN
Abstract: Pacific Wireless PH1819-33
Text: PH1819-33 Wireless Bipolar Power Transistor 33W, 1805-1880 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter Class AB operation Internal input and output impedance matching
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PH1819-33
33w NPN
Pacific Wireless
PH1819-33
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Untitled
Abstract: No abstract text available
Text: PH1819-33 Wireless Bipolar Power Transistor 33W, 1805-1880 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter Class AB operation Internal input and output impedance matching
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PH1819-33
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TRANSISTOR 185 846
Abstract: 1N914B PH1819-2
Text: =-r_= an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz 2W PH1819-2 Features Designed for Cellular Base Station Applications Class AB: -34 dBc Typ 3rd IMD at 2 Watts PEP Class A: +43 dBm Typ 3rd Order Intercept Point Common Emitter Configuration
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PH1819-2
TRANSISTOR 185 846
1N914B
PH1819-2
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bipolar transistor ghz s-parameter
Abstract: PH1819-2 083 ICO gp 1291
Text: PH1819-2 Wireless Bipolar Power Transistor 2W, 1.78-1.90 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • Designed for cellular base station applications Class AB: -34 dBc typ. 3rd IMD at 2 W PEP Class A: +43 dBm typ. 3rd order intercept point
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PH1819-2
bipolar transistor ghz s-parameter
PH1819-2
083 ICO
gp 1291
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PH1819-15N
Abstract: No abstract text available
Text: PH1819-15N Wireless Bipolar Power Transistor 15W, 1.78-1.90 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • • • NPN silicon microwave power transistor Designed for linear amplifier applications Class AB: -34 dBc typ. 3rd IMD at 15 W PEP
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PH1819-15N
PH1819-15N
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13MM
Abstract: PH1819-4N v6 4n diode
Text: an AMP comoanv Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz 4W PH1819-4N v2.00 Features ,975 .‘24 77, NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point
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PH1819-4N
rl850
300mA
13MM
PH1819-4N
v6 4n diode
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transistor b 595
Abstract: ATC100A PH1819-45
Text: = z-P= Coming Attractions an AMP company Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System
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PHl819-45
transistor b 595
ATC100A
PH1819-45
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transistor 5cw
Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000
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CDMA2000
2N6084
BLV102
CA5815CS
D1020UK
LF2810A
MRF175LV
MSC75652
PH1600-7
SD1466
transistor 5cw
transistor 5cw 61
sd1466
transistor 6cw
TRANSISTOR REPLACEMENT GUIDE
6CW transistor
MS3016
transistor selection guide
PH1516-2
STM1645-10
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Untitled
Abstract: No abstract text available
Text: M fc c m m an A M P com pany Wireless Bipolar Power Transistor, 4W 1.78- 1.90 GHz PH1819-4N Features • • • • • • • • /i?b U8 4?> NPN Silicon M icrowave Power T ransistor D esign ed for Linear Am plifier A pplications Class AB: -34 dB c Typ 3rd IMD at 4 Watts PEP
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PH1819-4N
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1N4Z45
Abstract: T33 transistor
Text: Atím m w an A M P com pany Wireless Power Transistor, 33W 1805-1880 MHz PH1819-33 V2.01 Features • NPN Silicon M icrow ave P o w er Transistor • C o m m o n Km itter C lass AB O peratio n • In tern al In pu t and O utpu t Im p ed an ce M atching • D iffu sed Km itter B allastin g
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PH1819-33
1N4Z45
T33 transistor
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181945
Abstract: No abstract text available
Text: A fik k Coming Attractions M aann A M P c<o m p a n y Wireless Bipolar Power Transistor, 45W 1805-1880 MHz PH1819-45 Features • • • • • NPN Silicon Microwave Power Transistor Com m on Emitter Class AB O peration Internal Input and O utput Im pedance Matching
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PH1819-45
181945
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J5417AKK
Abstract: MALLORY 150 CAPACITORS Rogers 6010.5 ATC100A PH1819-45A transistor 41 j5417
Text: PH1819-45A M/A-OOM Wireless Power Transistor 45 Watts, 1805- 1880 MHz /MOCOVI M RF & Microwave Products Outline Drawing1 Description M/A-COM’s PH11819-45A is a high efficiency silicon bipo lar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1805
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PH1819-45A
PH11819-45A
PH1819-45A
J5417AKK
TT50M50A
ATC100A
MALLORY 150 CAPACITORS
Rogers 6010.5
transistor 41
j5417
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b 595 transistor
Abstract: transistor b 595
Text: m an A M P com pany Wireless Bipolar Power Transistor, 10W 1.78 -1.90 GHz Features • • • • • PH1819-10 SL.Ü :i4 dd'- D esigned for C ellular Base Station A pplications -30 dBc Typ 3 rd IMD at 10 W atts PEP C o m m o n K m itter C onfig u ratio n
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PH1819-10
b 595 transistor
transistor b 595
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IU 1047
Abstract: transistor 1005 oj
Text: V M fcC Q M m an A M P com pany Wireless Bipolar Power Transistor, 2W 1 .7 8 -1 .9 0 GHz PH1819-2 744 _ Features • • • • • • bL.D ;i4 Designed for Cellular Base Station Applications Class AB: -34 dBc Typ 3rd 1MD at 2 Watts PKP Class A: +43 dBm Typ 3rd Order Intercept Point
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PH1819-2
IU 1047
transistor 1005 oj
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Untitled
Abstract: No abstract text available
Text: an A M P com pany Wireless Bipolar Power Transistor, 15W 1.78-1.90 GHz Features • • • • • • • • PH1819-15N S/b Cc*4 NPN Silicon Micro w ave Pow er T ran sisto r D esigned for Linear A m plifier A pplications Class AB: -34 dBc Typ 3rd IMD at 15 W atts PKP
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PH1819-15N
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PH1819-30
Abstract: PH1819
Text: Afa Wireless Power Transistor PH 1819-30 30 Watt, 1.78-1.90 GHz Features Outline Drawing • Designed for Linear Amplifier Applications • -30 dBc Typ 3rd IMD at 30 Watts PEP • Common Emitter Class AB Operation • Internal Input and Output Impedance Matching
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PH1819-30
PH1819-30
PH1819
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