2SK1103
Abstract: XN1D873
Text: Composite Transistors XN1D873 Silicon N-channel junction FET Unit: mm For analog switching +0.2 2.8 -0.3 +0.25 0.65±0.15 +0.1 +0.1 0 to 0.1 2SK1103 x 2 elements • Absolute Maximum Ratings 1 : Gate Tr1 2 : Gate (Tr2) 3 : Source (Tr2) (Ta=25˚C) Parameter
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XN1D873
2SK1103
2SK1103
XN1D873
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UN1210
Abstract: XN1210
Text: Composite Transistors XN1210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 • Absolute Maximum Ratings 1 : Collector Tr1 2 : Collector (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings
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XN1210
UN1210
UN1210
XN1210
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UN1112
Abstract: UN1212 XN1A312
Text: Composite Transistors XN1A312 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 ● Parameter (Ta=25˚C) Ratings Unit Collector to base voltage
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XN1A312
UN1212
UN1112
UN1112
XN1A312
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UN1210
Abstract: UNR1210 XN01210 XN1210
Text: Composite Transistors XN01210 XN1210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 +0.1 +0.1 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings Unit
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XN01210
XN1210)
UNR1210
UN1210)
UN1210
XN01210
XN1210
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2SB709A
Abstract: 2SD601A XN1601
Text: Composite Transistors XN1601 Silicon PNP epitaxial planer transistor Tr1 Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For general amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 3 0.65±0.15 1 2 0 to 0.1 2SB709A+2SD601A +0.1 +0.2 1.1 -0.1 ● 0.8
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XN1601
2SB709A
2SD601A
2SD601A
XN1601
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TRANSISTOR C 460
Abstract: 2SB709A 2SD601A XN1B301
Text: Composite Transistors XN1B301 Silicon PNP epitaxial planer transistor Tr1 Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For general amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 • Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 2 : Collector (Tr2)
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XN1B301
2SB709A
2SD601A
TRANSISTOR C 460
2SD601A
XN1B301
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2SB709A
Abstract: 2SD601A XN1C301
Text: Composite Transistors XN1C301 Silicon PNP epitaxial planer transistor Tr1 Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For general amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 • Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 2 : Collector (Tr2)
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XN1C301
2SB709A
2SD601A
2SD601A
XN1C301
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UN111H
Abstract: XN111H
Text: Composite Transistors XN111H Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN111H x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN111H
UN111H
UN111H
XN111H
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2SD814
Abstract: XN1507
Text: Composite Transistors XN1507 Silicon NPN epitaxial planer transistor Unit: mm For high break down voltage and low noise amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD814 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN1507
2SD814
2SD814
XN1507
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9s MARKING
Abstract: UN1111 XN1111
Text: Composite Transistors XN1111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1111 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN1111
UN1111
9s MARKING
UN1111
XN1111
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XN1216
Abstract: UN1216
Text: Composite Transistors XN1216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1216 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN1216
UN1216
XN1216
UN1216
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UN1110
Abstract: XN1110
Text: Composite Transistors XN1110 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1110 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN1110
UN1110
UN1110
XN1110
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UN1212
Abstract: XN1212 SC74A EIAJ-SC74A
Text: Composite Transistors XN1212 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1212 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN1212
UN1212
UN1212
XN1212
SC74A
EIAJ-SC74A
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UN1210
Abstract: XN2210
Text: Composite Transistors XN2210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1210 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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UN1210
XN2210
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UN1212
Abstract: XN2212
Text: Composite Transistors XN2212 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1212 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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UN1212
UN1212
XN2212
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UN1211
Abstract: XN2211
Text: Composite Transistors XN2211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1211 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN2211
UN1211
UN1211
XN2211
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UN1217
Abstract: XN1217 9p marking
Text: Composite Transistors XN1217 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1217 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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UN1217
UN1217
XN1217
9p marking
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XN1211
Abstract: UN1211
Text: Composite Transistors XN1211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1211 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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UN1211
XN1211
UN1211
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UN1215
Abstract: XN1215
Text: Composite Transistors XN1215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1215 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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UN1215
UN1215
XN1215
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2SC4561
Abstract: XN1509 4600ic
Text: Composite Transistors XN1509 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SC4561 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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2SC4561
2SC4561
XN1509
4600ic
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UN1112
Abstract: XN1112
Text: Composite Transistors XN1112 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1112 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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UN1112
UN1112
XN1112
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2SK621
Abstract: XN1872
Text: Composite Transistors XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm For switching +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SK621 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element 0.16 -0.06 +0.1
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XN1872
2SK621
2SK621
XN1872
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UN1115
Abstract: XN1115
Text: Composite Transistors XN1115 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1115 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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UN1115
UN1115
XN1115
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UN1216
Abstract: XN2216
Text: Composite Transistors XN2216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1216 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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UN1216
UN1216
XN2216
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