Untitled
Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher
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CMPA5585025F
CMPA5585025F
CMPA55
85025F
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Untitled
Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA5585025F
CMPA5585025F
CMPA55
85025F
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at10GHz
Abstract: No abstract text available
Text: TGF4350-EPU Discrete PHEMT I 300 Jim x 0.25 Jim DC to 22 GHz Frequency Range Floating Source Configuration Nominal Pout of 1 6 -dBm at 10 GHz Nominal PAEof 60 %at 10 GHz Less than 0.8-dB Noise Figure with 13 dB Associated Gain at 10 GHz 0,457 x 0,356 x 0,102 mm 0.018 x 0.014 x 0.004 in.
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TGF4350-EPU
at10GHz
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Untitled
Abstract: No abstract text available
Text: 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 262,144x9 524,288 x 9 PRELIMINARY IDT72V2101 IDT72V2111 Integrated Device Technology, Inc. FEATURES: • Choose among the following memory organizations: IDT72V2101 2 6 2 ,1 4 4 x 9 IDT72V2111 5 2 4 ,2 8 8 x 9 • P in-com patible w ith the IDT72V261/72V271 and the
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144x9
IDT72V2101
IDT72V2111
IDT72V261/72V271
IDT72V281
/72V291
O-136,
492-M
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MA350
Abstract: RH46
Text: MMIiyjlbCHblN rEHEPATOPHblM TPIIOfl TRIODE HMnyfibCHbm reHepaTopHbiii Tpnofl TH-4 6 5 npeflH a3H aneH r e H e p u p o B a H iia n a c T O T H b ix K O / ie ô a H M ii b n ycnneH na H e n p e p b iB H O M m B b ic 0 K 0 - M M n y /ib C H O M rkl-46E The TH-46B triode generates and amplifies RF oscil
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rkl-46E
rH-465
B03flywH0e
TH-46B
iana30H
MA350
RH46
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Untitled
Abstract: No abstract text available
Text: CMOS SUPERSYNC FIFO 8,192 x 18 16,384 x 18 PRELIMINARY IDT72255LA IDT72265LA Integrated Device Technology, Inc. FEATURES: • Choose among the following memory organizations: IDT72255LA 8 ,1 9 2 x 1 8 IDT72265LA 1 6 ,3 8 4 x 1 8 • Pin-compatible with the IDT72275/72285 SuperSync FI FOs
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IDT72255LA
IDT72265LA
IDT72275/72285
492-M
IDT77105
25Mb/s
64-PIN
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LF 3.3vOLT
Abstract: No abstract text available
Text: PRELIMINARY IDT72V255 IDT72V265 3.3 VOLT CMOS SUPERSYN C FIFO 8,192x18,16,384x18 Integrated Device Technology, Inc. • Output enable puts data outputs into high impedance • High-performance submicron CMOS technology • Industrial temperature range -40°C to +85°C is avail
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192x18
384x18
IDT72V255
IDT72V265
18-bit
IDT72V255)
IDT72V265)
492-M
PSC-4036
LF 3.3vOLT
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Untitled
Abstract: No abstract text available
Text: CMOS SUPERSYNC FIFO 16,384x9 32,768 x 9 \dt PRELIMINARY IDT72261LA IDT72271LA Integrated Device Technology, Inc. HFEATURES: • Choose among the following memory organizations: IDT72261LA 16,384 x9 IDT72271LA 32,768 x 9 • P in -co m p a tib le w ith the ID T 72V 281/72V 291 and
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384x9
IDT72261LA
IDT72271LA
IDT72271LA
281/72V
IDT72V2101/72V2111
PN64-1)
PP64-1)
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SC4512
Abstract: No abstract text available
Text: 3.3 VOLT CMOS SUPERSYNC FIFO 32,768x18 65,536x18 \dt PRELIMINARY IDT72V275 IDT72V285 Integrated Device Technology, Inc. FEATURES: • Choose among the following memoiy organizations: IDT72V275 32,768x18 IDT72V285 65,536x18 • Pin-compatible with the IDT72V255/72V265 SuperSync
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768x18
536x18
IDT72V275
IDT72V285
IDT72V285
IDT72V255/72V265
PN64-1)
SC4512
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C4425
Abstract: No abstract text available
Text: fax id: 5410 CY7C4425/4205/4215 CY7C4225/4235/4245 64, 256, 512, 1K , 2K, 4K x 18 Synchronous FIFOs F e a tu re s • High-speed, low-power, first-in first-out FIFO memories • 64 x 18 (CY7C4425) • 256 x 18 (CY7C4205) . 512 x 18 (CY7C4215) • 1 K x 18 (CY7C4225)
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CY7C4425/4205/4215
CY7C4225/4235/4245
CY7C4425)
CY7C4205)
CY7C4215)
CY7C4225)
CY7C4235)
CY7C4245)
100-MHz
C4425
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rs tube
Abstract: ScansU9X22
Text: K o a K cu cu ib H b iü zen ep a T o p H b iü r e r p o d Coaxial transm itting tetrode Ko axiale Sendetetrode RE5X L - * 37. n nPHMEHEHHE JIaM n a TECJIA RE5XL flBJiaeTCH m o h jh h m JiyyeB L IM TeTpOÄOM C IlpH M O H aK aJIbH blM K a-
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cn0Jib30BaTb
rs tube
ScansU9X22
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FU 50 tube
Abstract: ScansU9X22
Text: renepaTopHbiü rerpod Transm itting tetrode Sendetetrode RE65A - nPHMEHEHHE JIaMna TECJIA RE65A HBjiaeTca re H e p aTOpHfcIM Jiy^eBBIM TeTpOÆOM K â J ib H b iM K a T O Ä O M h sH a^eH n eM C npÄMOHapacceH B ae- M O H a H O a O M MOIIJHOCTH 6 5 BT,
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RE65A
RE65A
FU 50 tube
ScansU9X22
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Untitled
Abstract: No abstract text available
Text: re w p a T o p H b iü Tpuod T ra n sm ittin g triode Sendetriode RD150YJ - nP H M E H E H H E JIaM n a TECJIA R D 150YJ HBjiaeTCii reHepaTopHbrM TpHOflOM c npsMOHaKaJibHHM Katoäom h 3H aieH H eM paccenBaeMoä aHoaoM MOiBtHOCTH 1 5 0 K B T , K O T o p b iü n p e , n H a 3 H a ie H
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RD150YJ
OpHpOBaH100
RD150YJ
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tesla rf oscillator
Abstract: No abstract text available
Text: r e n e p a r o p H b iü r p u o d T ra n sm itting triode Sendetriode RD5YF -í>110t5 nPHM EHEHHE JIaMna T ECJIA R D 5Y F hbjihctch Koponco BOJIHOBbIM TpHOÄOM C BOflHHHM OXJia»ÄeHHeM h 3Ha^eHneM pacceHBaeMoii aHOÄOM MOmHOCTH 5 KBT, npeÄHa3Hati€HHbrM ÄJIH
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vacuum capacitor
Abstract: TC-005
Text: B a K y y M H b iü K o n d e n c a r o p Vacuum capacitor Vakuumkondensator TC005 -nPHM EHEHHE BaKyyM H biiî KOHaeHcaTOp T E C J I A T C 0 0 5 C HeCKOJIbKHMH CTaKaH00Öpa3HbIMH SJieK' TpoflaMH H3 ajiioMHHHH npeÄHasnaqeH juia npHMeHeHHH b BticoKO^acTOTHbix iie n n x nepe^aT^HKOB, npoMBiniJieHHbix reHepaTopoB
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TC005
CTaKaH006pa3HbIMH
o6pa30M,
vacuum capacitor
TC-005
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RD75YB
Abstract: No abstract text available
Text: renepaTopHbiü rpuod Transmitting triode Sendetriode RD75YB - 3 7 :a nPHMEHEHHE TECJIA RD75YB H B j in e T c a r e H e p a - J Ia M n a TOpHblM TpHOÄOM C npHMOHaKajIbHbIM KaTO- äom h 3Ha>ieHHeM pacceHBaeMoñ aHOÄOM 75 MomHocTH KBT, KOTopHH npeÄHa3HaieH
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RD75YB
RD75YB
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TESLA re025xa
Abstract: re025xa druck RE025X tesla rf oscillators MEPE
Text: K o a K c u a A b H b iü z e n e p a ro p rn iú , r e r p o d Coaxial transm itting tetrode Koaxiale Sendetetrode RE025XA-<2i41,7 -ï% 014,6 -oi nPHMEHEHHE SjieKTpoHHaa jiaMna TECJIA RE025XA npeacraB jifler coöoii m ohíhhh jiyqeBoii tc t pOÄ KOCßeHHoro HaKajia c m ouihoctbio,
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RE025XA
RE025XA
ncnojib30BaHHa
ncn0jib30BaTb
TESLA re025xa
druck
RE025X
tesla rf oscillators
MEPE
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Tesla
Abstract: H3 diode hochspannungsgleichrichter tesla diode
Text: KeH orp oH R e ctify ing v a cu u m diode H o c h v a k u u m -G le ic h ric h te rd io d e RA05A - M 5 & CM \0 2 8 nPHMEHEHHE JIaMna TECJIA RA05A hbjiäctch KeHOTpoHOM c oähhm aHOflOM, npeaHasHa^eHHbiM jXJiK BbicoKOBOJibTHbix BhiiipjiMKTGJieîï nepeM e H H o ro TOKa.
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RA05A
RA05A
B03xyuiHoe
Tesla
H3 diode
hochspannungsgleichrichter
tesla diode
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YXA 50V
Abstract: AETA
Text: K o a K c u a A b H b iü e e n e p a r o p H b iü rerpod C o a x ia l tra n sm ittin g tetrode K o a xia le Sendetetrode RE1,5XL -nPHM EHEHHE TECJIA R E 1 , 5 X L JIaM n a S B J ia e T C H jiy q e - B bIM TeT pO Ä O M C X ipH M O H aK aJIbH H M K aT O äom h 3Ha^eHHeM pacceHBaeMoii aHOÄOM
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Hcnojib-30BaTb
YXA 50V
AETA
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tesla diode
Abstract: jo katode
Text: r< X30T p0H R e ctify ing d isc h a rg e tube G a sg efü llte G le ich rich te rrö h re UA5A - IIPHMEHEHHE JIaMna TECJIA UA5A HBjiaeTca ra30Tp0HOM C OÄHHM aHOÄOM H pTyTHbIM HanojiHeHHeM, K0T0pbiH npe;iHa3HaH OH npnMeHCHHH B BHnpHMHTejIBHblX yCTpOHCTBaX
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ra30Tp0-
tesla diode
jo katode
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ky 202 h
Abstract: a1026 ky 202 TESLA 1
Text: renepaTopHbiü Tpuod T ra n sm ittin g triode Send etriode RD20XF - * 148*1 9 tro*0* nPHM EHEHHE 9 JIaM na T E C J IA R D 2 0 X F hbjihctcä reH epaTOpHKM TpHOÄOM C B03flyiHHbIM OXJiaJKfleHHeM h 3Ha^eHHeM pacceHBaeMOH aHoaoM MOUXHOCTH 20 KBT, KOTopHH npejmasHa^ieH
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RD20XF
B03flyiUHBIM
ky 202 h
a1026
ky 202
TESLA 1
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H3 diode
Abstract: radiator of diode vacuum tube amplifier
Text: KeH O TpO H R ectifyin g vacuum diode H ochvakuum -G leichrichterdiode RA7XL - nPHMEHEHHE TECJIA RA7XL JIa M n a a JIb H B IM K eH O T p O H O M B 0 3 ^ y in H B iM H B iM C o x ji a > K ,ii e H H e M , npH M eH eH H H ä jih H B J ia e T C í i K o a K c n O JfflH M
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B03ayniHbiM
H30JIHp0BaHBI
H3 diode
radiator of diode
vacuum tube amplifier
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Tesla
Abstract: No abstract text available
Text: r 0 3 0 Tp0 H Rectifying discharge tube G a sge ß llte Gleichrichterröhre UA1A - nPHMEHEHHE JIaMna TECJIA UA1A HBjiseTCH ra30Tpc>HOM C OÄHHM aHOAOM, KOTOpblH HanOJIHeH pTyTbio h npeÄHaäHa'ieH ajia npHMeHeHHs B BbinpHMHTejIbHbIX yCTpOHCTBaX B blC O K O ro
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ra30Tpo-
Tesla
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tube RV 278
Abstract: RE025X tesla rf oscillators PAEO lem HA RE025XB keramische
Text: K o ü K cu a A b H b iü z e m p a r o p r n i ú T e rp o d C o a x ia l tra n sm ittin g tetrode K o a xia le Sendetetrode RE025XB -4417 È/C 0 1 4 ,6 -V i - 0 ,6 io e o »> H >1 35 7 . rv N-' c io otf nP H M E H E H H E 9jieKTpoHH3Ä JiaMna TEC J 1A RE025X B
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RE025XB
Hcn0jiB30BaHKH
30BaTB
tube RV 278
RE025X
tesla rf oscillators
PAEO
lem HA
keramische
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