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    P45N02L Search Results

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    P45N02L Price and Stock

    Rochester Electronics LLC RFP45N02L

    N-CHANNEL POWER MOSFET
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    DigiKey RFP45N02L Bulk 606
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    Niko Semicondutor Co Ltd P45N02LDG

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    Bristol Electronics P45N02LDG 15,104
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    P45N02LDG 84
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    Quest Components P45N02LDG 12,083
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    P45N02LDG 67
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    Not Specified P45N02LDG

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    Bristol Electronics P45N02LDG 725
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    Kingbright P45N02LDG

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    Quest Components P45N02LDG 560
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    Others P45N02LDG

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    Quest Components P45N02LDG 580
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    P45N02L Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    P45N02LD Niko Semiconductor 25V 45A N-channel logic level enhancement mode field effect transistor Original PDF
    P45N02LDG Niko Semiconductor N-Channel Logic Level Enhancement FET Original PDF
    P45N02LSG Niko Semiconductor N-Channel Logic Level Enhancement FET Original PDF
    P45N02LTG Niko Semiconductor N-Channel Logic Level Enhancement FET Original PDF
    P45N02LV Niko Semiconductor 25V 10A P-channel logic level enhancement mode field effect transistor Original PDF

    P45N02L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P45N02LD

    Abstract: niko p45n02ld dpak DIODE niko p45n02ld equivalent
    Text: P45N02LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 20mΩ 45A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original
    PDF P45N02LD O-252 P45N02LD" MAY-24-2001 P45N02LD niko p45n02ld dpak DIODE niko p45n02ld equivalent

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


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    PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    P45N02LS

    Abstract: NIKO-SEM SM-150 diode P45N02LSG p45n02l P45N02
    Text: NIKO-SEM P45N02LSG N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-263 D2PAK Lead Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 20mΩ 45A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original
    PDF P45N02LSG O-263 Temperat3-2004 AUG-13-2004 P45N02LS NIKO-SEM SM-150 diode P45N02LSG p45n02l P45N02

    P45N02LDG

    Abstract: Niko Semiconductor p45n02ldg P45N02LD dpak code Niko Semiconductor P45N02 Field Effect Transistor SM-150 diode TO252
    Text: P45N02LDG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 20mΩ 45A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original
    PDF P45N02LDG O-252 Temperatu04 Sep-02-2004 P45N02LDG Niko Semiconductor p45n02ldg P45N02LD dpak code Niko Semiconductor P45N02 Field Effect Transistor SM-150 diode TO252

    ELM32430LA

    Abstract: p45n02ldg
    Text: 单 N 沟道 MOSFET ELM32430LA-S •概要 ■特点 ELM32430LA-S 是 N 沟道低输入电容,低工作电压, •Vds=25V 低导通电阻的大电流 MOSFET。 ·Id=45A ·Rds on < 28mΩ (Vgs=10V) ·Rds(on) < 30mΩ (Vgs=7V) ■绝对最大额定值 项目


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    PDF ELM32430LA-S P45N02LDG O-252 Sep-02-2004 ELM32430LA p45n02ldg

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32430LA-S •General description ■Features ELM32430LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=45A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 30mΩ (Vgs=7V)


    Original
    PDF ELM32430LA-S ELM32430LA-S P45N02LDG O-252 Sep-02-2004

    P45N02LD

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32430LA-S •General description ■Features ELM32430LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=45A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 30mΩ (Vgs=7V)


    Original
    PDF ELM32430LA-S ELM32430LA-S P45N02LDG O-252 Sep-02-2004 P45N02LD

    p45n02ldg

    Abstract: No abstract text available
    Text: シングル N チャンネル MOSFET ELM32430LA-S •概要 ■特長 ELM32430LA-S は低入力容量 低電圧駆動、 低 ・ Vds=25V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=45A ・ Rds on < 28mΩ (Vgs=10V) ・ Rds(on) < 30mΩ (Vgs=7V)


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    PDF ELM32430LA-S P45N02LDG O-252 Sep-02-2004 p45n02ldg