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Niko Semicondutor Co Ltd P06P03LCGA
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Bristol Electronics	P06P03LCGA		14,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NIKO-SEM P06P03LDG Electronic Component
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ComSIT USA	P06P03LDG		447			1 - 10 - 100 - 1000 - 10000 -	Get Quote

P06P03 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
P06P03LD		Niko Semiconductor	P-Channel Logic Level Enhancement FET		Original	PDF
P06P03LDG		Niko Semiconductor	P-Channel Logic Level Enhancement FET		Original	PDF
P06P03LV		Niko Semiconductor	P-Channel Logic Level Enhancement FET		Original	PDF
P06P03LVG		Niko Semiconductor	P-Channel Logic Level Enhancement FET		Original	PDF

P06P03 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
P06P03LDG Abstract: nikos P06P03 Field Effect Transistor p-Channel Logic Level Enhancement Mode niko-sem TO252 Niko Semiconductor sm 17 35 tc P06P03LD Text: P06P03LDG P-Channel Logic Level Enhancement NIKO-SEM Mode Field Effect Transistor TO-252 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 45mΩ -12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	PDF	P06P03LDG O-252 AUG-17-2004 P06P03LDG nikos P06P03 Field Effect Transistor p-Channel Logic Level Enhancement Mode niko-sem TO252 Niko Semiconductor sm 17 35 tc P06P03LD
P06P03LD Abstract: P06P03 p-Channel Logic Level Enhancement Mode nikos niko-sem "Field Effect Transistor" nikosem Text: P-Channel Logic Level Enhancement NIKO-SEM P06P03LD Mode Field Effect Transistor TO-252 D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 45mΩ -12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	PDF	P06P03LD O-252 OCT-12-2004 P06P03LD P06P03 p-Channel Logic Level Enhancement Mode nikos niko-sem "Field Effect Transistor" nikosem
P06P03 Abstract: p-Channel Logic Level Enhancement Mode P06P03LV NIKO-SEM nikos field effect transistor Text: P-Channel Logic Level Enhancement NIKO-SEM P06P03LV Mode Field Effect Transistor SOP-8 D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 45mΩ -6A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	PDF	P06P03LV MAY-19-2003 P06P03 p-Channel Logic Level Enhancement Mode P06P03LV NIKO-SEM nikos field effect transistor
P06P03LVG Abstract: P06P03 niko-sem Text: P-Channel Logic Level Enhancement NIKO-SEM P06P03LVG Mode Field Effect Transistor SOP-8 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 45mΩ -6A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	PDF	P06P03LVG JUN-10-2004 P06P03LVG P06P03 niko-sem
Untitled Abstract: No abstract text available Text: Single P-channel MOSFET ELM32405LA-S •General description ■Features ELM32405LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-12A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)	Original	PDF	ELM32405LA-S ELM32405LA-S P06P03LDG O-252 AUG-17-2004
P06P03 Abstract: P06P03LDG P06P03LD Text: Single P-channel MOSFET ELM32405LA-S •General description ■Features ELM32405LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-12A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)	Original	PDF	ELM32405LA-S ELM32405LA-S P06P03LDG O-252 AUG-17-2004 P06P03 P06P03LDG P06P03LD
Untitled Abstract: No abstract text available Text: シングル P チャンネル MOSFET ELM32405LA-S •概要 ■特長 ELM32405LA-S は低入力容量低電圧駆動、低・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。・ Id=-12A ・ Rds on < 45mΩ (Vgs=-10V) ・ Rds(on) < 75mΩ (Vgs=-4.5V)	Original	PDF	ELM32405LA-S P06P03LDG O-252 AUG-17-2004
P70N02LDG Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG	Original	PDF	O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Untitled Abstract: No abstract text available Text: Single P-channel MOSFET ELM34417AA-N •General description ■Features ELM34417AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)	Original	PDF	ELM34417AA-N ELM34417AA-N P06P03LVG JUN-10-2004
ELM34417AA Abstract: No abstract text available Text: 单 P 沟道 MOSFET ELM34417AA-N •概要 ■特点 ELM34417AA-N 是 P 沟道低输入电容，低工作电 •Vds=-30V 压，低导通电阻的大电流 MOSFET。 ·Id=-6A ·Rds on < 45mΩ (Vgs=-10V) ·Rds(on) < 75mΩ (Vgs=-4.5V) ■绝对最大额定值	Original	PDF	ELM34417AA-N P06P03LVG JUN-10-2004 ELM34417AA
ELM32405LA Abstract: No abstract text available Text: 单 P 沟道 MOSFET ELM32405LA-S •概要 ■特点 ELM32405LA-S 是 P 沟道低输入电容，低工作电压，低导通电阻的大电流 MOSFET。 •Vds=-30V ·Id=-12A ·Rds on < 45mΩ (Vgs=-10V) ·Rds(on) < 75mΩ (Vgs=-4.5V) ■绝对最大额定值	Original	PDF	ELM32405LA-S P06P03LDG O-252 AUG-17-2004 ELM32405LA
Untitled Abstract: No abstract text available Text: Single P-channel MOSFET ELM34417AA-N •General description ■Features ELM34417AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)	Original	PDF	ELM34417AA-N ELM34417AA-N P06P03LVG JUN-10-2004
P06P03 Abstract: No abstract text available Text: シングル P チャンネル MOSFET ELM34417AA-N •概要 ■特長 ELM34417AA-N は低入力容量低電圧駆動、低・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。・ Id=-6A ・ Rds on < 45mΩ (Vgs=-10V) ・ Rds(on) < 75mΩ (Vgs=-4.5V)	Original	PDF	ELM34417AA-N P06P03LVG JUN-10-2004 P06P03