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    P0109AN Search Results

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    P0111BN

    Abstract: P0109BN P2C SOT223 P0102AN P0111AN transistor P9d p0102b scr Igt 1mA P0102BN P0102CN
    Text: P01xxxN  SENSITIVE GATE SCR FEATURES IT RMS = 0.8A VDRM = 100V to 400V Low IGT < 200 µA A K A G DESCRIPTION The P01xxxN series of SCRs uses a high performance planar PNPN technology. These parts are intended for general purpose high volume applications using surface mount


    Original     		PDF P01xxxN P01xxxN OT223 P0111BN P0109BN P2C SOT223 P0102AN P0111AN transistor P9d p0102b scr Igt 1mA P0102BN P0102CN

    Untitled

    Abstract: No abstract text available
    Text: Æ T S G S -T H O M S O N ^ 7 # R LUGTIfiiOTIO POIxxxN SENSITIVE GATE SCR FEATURES = 0.8A - Vdrm = 100V to 400V • Low Ig t < 200 |aA ■ It r m s DESCRIPTION The POIxxxN series of SCRs uses a high performance planar PNPN technology. These parts are intended for general purpose high


    OCR Scan     		PDF OT223 70GbQ

    PO102A

    Abstract: po102 MARKING SG SOT223 P0111AN P0109DN SOT223 marking SG P0102CN P0109AN HA2001
    Text: r r z ^ 7# S G S -T H O M S O N RfflDOœiHitSiriHiOiDOS POIxxxN SENSITIVE GATE SCR FEATURES • It rms =0.8A ■ V drm = 100V to 400V ■ Low I g t < 200 jiA DESCRIPTION The POIxxxN series of SCRs uses a high performance planar PNPN technology. These parts are intended tor general purpose high


    OCR Scan     		PDF OT223 PO102A po102 MARKING SG SOT223 P0111AN P0109DN SOT223 marking SG P0102CN P0109AN HA2001