Untitled
Abstract: No abstract text available
Text: Si6441DQ New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.015 @ VGS = - 10 V -8 0.024 @ VGS = - 4.5 V - 6.4 APPLICATIONS D Battery Switch D Load Switch S* TSSOP-8
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Si6441DQ
Si6441DQ-T1
08-Apr-05
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Si6441DQ
Abstract: Si6441DQ-T1
Text: Si6441DQ New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.015 @ VGS = - 10 V -8 0.024 @ VGS = - 4.5 V - 6.4 APPLICATIONS D Battery Switch D Load Switch S* TSSOP-8
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Si6441DQ
Si6441DQ-T1
S-03984--Rev.
19-May-03
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Untitled
Abstract: No abstract text available
Text: Si4505DY Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A)
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Si4505DY
2002/95/EC
Si4505DY-T1-E3
Si4505DY-T1-GE3
25electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Si4501ADY
2002/95/EC
Si4501ADY-T1-E3
Si4501ADY-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4505DY Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A)
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Si4505DY
2002/95/EC
Si4505DY-T1-E3
Si4505DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Si4501ADY
2002/95/EC
Si4501ADY-T1-E3
Si4501ADY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Si4501ADY
2002/95/EC
Si4501ADY-T1-E3
Si4501ADY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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858P
Abstract: F63TNR FDR858P SOIC-16
Text: February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little
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FDR858P
OT-23
858P
F63TNR
FDR858P
SOIC-16
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858P
Abstract: P-Channel Logic Level PowerTrenchTM MOSFET FDR858P SOIC-16 Single P-Channel, Logic Level, PowerTrench MOSFET
Text: February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little
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FDR858P
OT-23
858P
P-Channel Logic Level PowerTrenchTM MOSFET
FDR858P
SOIC-16
Single P-Channel, Logic Level, PowerTrench MOSFET
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Untitled
Abstract: No abstract text available
Text: February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little
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FDR858P
028ications
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Untitled
Abstract: No abstract text available
Text: New Product Si1315DL Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) -8 RDS(on) ()
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Si1315DL
2002/95/EC
OT-323
SC-70
Si1315DL-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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SI1315DL
Abstract: lj marking
Text: New Product Si1315DL Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) -8 RDS(on) ()
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Si1315DL
2002/95/EC
OT-323
SC-70
Si1315DL-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
lj marking
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si1315DL Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) -8 RDS(on) ()
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Si1315DL
2002/95/EC
OT-323
SC-70
Si1315DL-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si1315DL Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) -8 RDS(on) ()
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Si1315DL
2002/95/EC
OT-323
SC-70
Si1315DL-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Si6459BDQ
Abstract: Si6459BDQ-T1
Text: Si6459BDQ Vishay Siliconix New Product P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) −60 60 FEATURES rDS(on) (W) ID (A) 0.115 @ VGS = −10 V −2.7 0.150 @ VGS = −4.5 V −2.4 D TrenchFETr Power MOSFET S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S D * Source Pins 2, 3, 6 and 7
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Si6459BDQ
Si6459BDQ-T1
S-32220--Rev.
03-Nov-03
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Si6459BDQ
Abstract: Si6459BDQ-T1 32220
Text: Si6459BDQ Vishay Siliconix New Product P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) −60 60 FEATURES rDS(on) (W) ID (A) 0.115 @ VGS = −10 V −2.7 0.150 @ VGS = −4.5 V −2.4 D TrenchFETr Power MOSFET S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S D * Source Pins 2, 3, 6 and 7
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Si6459BDQ
Si6459BDQ-T1
08-Apr-05
32220
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Single P-Channel, Logic Level, PowerTrench MOSFET
Abstract: P-Channel Logic Level PowerTrenchTM MOSFET F63TNR F852 FDR8308P SOIC-16
Text: November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.
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FDR8308P
Single P-Channel, Logic Level, PowerTrench MOSFET
P-Channel Logic Level PowerTrenchTM MOSFET
F63TNR
F852
FDR8308P
SOIC-16
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FDR8308P
Abstract: SOIC-16
Text: November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.
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FDR8308P
FDR8308P
SOIC-16
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F63TNR
Abstract: F852 FDR8308P SOIC-16 SSOT-8
Text: November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.
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FDR8308P
F63TNR
F852
FDR8308P
SOIC-16
SSOT-8
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Untitled
Abstract: No abstract text available
Text: Si3417DV Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A)d,e 0.0252 at VGS = - 10 V -8 0.0360 at VGS = - 4.5 V -8 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:
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Si3417DV
Si3417DV-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Schottky Diode 40V 6A
Abstract: CBVK741B019 F011 F63TNR F852 FDFS2P102 FDS9953A L86Z
Text: FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode General Description Features The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
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FDFS2P102
FDFS2P102
Schottky Diode 40V 6A
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
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PDF
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FDFS2P102
Abstract: No abstract text available
Text: FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode General Description Features The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
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FDFS2P102
FDFS2P102
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2U 73 diode
Abstract: siliconix
Text: SÌ6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SU M M AR v V d s CV) RDS(OM) (ß ) Id là) 0,019 @ VGS = - 1 0 V ±6.5 0.030 @ V gs = -4 .5 V ±5.2 -3 0 S* P TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. Top View ò D P-Channel MOSFET
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OCR Scan
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6415DQ
S-49519--
18-Dec-96
2U 73 diode
siliconix
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PDF
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Untitled
Abstract: No abstract text available
Text: SÌ6463DQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY V o s <VJ Rd S<ON| (3 ) >d (A) 0.020 @ VGS = -4 .5 V ±6.5 0.030 @ VGS = -2.5 V ±5.2 e 't'V ' A -20 s* Q TSSOP-8 O il Source Pins 2, 3 ,6 and 7 must be tied common. It Top View Ô D P-Channel MOSFET
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OCR Scan
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6463DQ
S-51477--
17-Feb-97
S86463DQ_
17-Fet
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