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    SI3417DV Search Results

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    SI3417DV Price and Stock

    Vishay Siliconix SI3417DV-T1-GE3

    MOSFET P-CH 30V 8A 6TSOP
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    DigiKey SI3417DV-T1-GE3 Cut Tape 10,851 1
    • 1 $0.66
    • 10 $0.411
    • 100 $0.66
    • 1000 $0.17909
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    SI3417DV-T1-GE3 Digi-Reel 10,851 1
    • 1 $0.66
    • 10 $0.411
    • 100 $0.66
    • 1000 $0.17909
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    SI3417DV-T1-GE3 Reel 9,000 3,000
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    • 10000 $0.15297
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    Vishay Intertechnologies SI3417DV-T1-GE3

    Trans MOSFET P-CH 30V 8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3417DV-T1-GE3)
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    Avnet Americas SI3417DV-T1-GE3 Reel 6,000 17 Weeks 3,000
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    Mouser Electronics SI3417DV-T1-GE3 24,995
    • 1 $0.52
    • 10 $0.372
    • 100 $0.245
    • 1000 $0.168
    • 10000 $0.117
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    Verical SI3417DV-T1-GE3 6,000 6,000
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    Arrow Electronics SI3417DV-T1-GE3 6,000 17 Weeks 6,000
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    Newark SI3417DV-T1-GE3 Cut Tape 408 5
    • 1 $0.542
    • 10 $0.394
    • 100 $0.267
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    SI3417DV-T1-GE3 Reel 6,000
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    TTI SI3417DV-T1-GE3 Reel 6,000 3,000
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    TME SI3417DV-T1-GE3 1
    • 1 $0.462
    • 10 $0.368
    • 100 $0.261
    • 1000 $0.179
    • 10000 $0.173
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    Avnet Asia SI3417DV-T1-GE3 19 Weeks 6,000
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    EBV Elektronik SI3417DV-T1-GE3 18 Weeks 3,000
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    Others SI3417DV

    AVAILABLE EU
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    ComSIT USA SI3417DV 6,750
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    Vishay Huntington SI3417DV-T1-GE3

    MOSFET P-CH 30V 8A TSOP-6
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    Win Source Electronics SI3417DV-T1-GE3 42,908
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    • 10000 $0.1694
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    SI3417DV Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3417DV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 8A TSOP-6 Original PDF

    SI3417DV Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3417DV Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A)d,e 0.0252 at VGS = - 10 V -8 0.0360 at VGS = - 4.5 V -8 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		Si3417DV Si3417DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si3417DV www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		Si3417DV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF