Untitled
Abstract: No abstract text available
Text: VDSS ID25 IXTH50P10 IXTT50P10 Standard Power MOSFET = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated - 100V - 50A Ω 55mΩ TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
|
Original
|
PDF
|
IXTH50P10
IXTT50P10
O-247
O-268
50P10
3-08-A
|
IXTH50P10
Abstract: P-CHANNEL 25A TO-247 POWER MOSFET IXTT50P10 50P10
Text: Standard Power MOSFET IXTH50P10 IXTT50P10 VDSS ID25 = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated - 100V - 50A Ω 55mΩ TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
|
Original
|
PDF
|
IXTH50P10
IXTT50P10
O-247
50P10
3-08-A
IXTH50P10
P-CHANNEL 25A TO-247 POWER MOSFET
IXTT50P10
|
P channel 50A IGBT
Abstract: isolated voltage sensor 1mhz diode bridge BY 26 CV MSK4351 IGBT 500V 50A use igbt for 3 phase induction motor Bv 42 transistor
Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge
|
Original
|
PDF
|
MIL-PRF-38534
20KHz
MIL-PRF-38535
MIL-PRF-38534)
1000G
P channel 50A IGBT
isolated voltage sensor 1mhz
diode bridge BY 26 CV
MSK4351
IGBT 500V 50A
use igbt for 3 phase induction motor
Bv 42 transistor
|
APT50GF100BN
Abstract: 780L
Text: ADVANCED POWER TECHNOLOGY LIE D • DeSTIGT OOOOflm 2fiS ■ AVP A dvanced P o w er Te c h n o l o g y APT50GF100BN 1000V 50A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings:
|
OCR Scan
|
PDF
|
APT50GF100BN
-55nd
O-247AD
780L
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A MG50J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 5 0 J 1 BS1 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. U nit in mm • High Input Impedance • H ig h S p e e d • Low Saturation Voltage : VQE sa t = 2.7V (Max.) (Iq = 50A)
|
OCR Scan
|
PDF
|
MG50J1BS11
|
APT50GL60BN
Abstract: 25CC
Text: A D V A NC ED PO WER T E C H N O L O G Y blE D • O a S ? ^ 1! OOOOflSM bTT * A V P ■ R A d v a n c W /< A P O W E R e d rJ m I T e c h n o l o g y APT50GL60BN 600V 50A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR
|
OCR Scan
|
PDF
|
APT50GL60BN
25CC
|
Untitled
Abstract: No abstract text available
Text: A D V A N C E D PO WE R T E C H N O L O G Y blE D • 0257^0=1 0 0 0 0 0 5 4 bTI H A V P ■ r W /jA A dvanced pow er Te c h n o l o g y APT50GL60BN 600V 50A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR
|
OCR Scan
|
PDF
|
APT50GL60BN
|
MG50J2YS50
Abstract: transistor te 2305 mg50j V20-H IGBT MG50J2YS50
Text: TOSHIBA MG50J2YS50 MG50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4-FA ST -O N -TA B # 110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One
|
OCR Scan
|
PDF
|
MG50J2YS50
2-94D1A
MG50J2YS50
transistor te 2305
mg50j
V20-H
IGBT MG50J2YS50
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A MG50J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J6ES50 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. Enhancement-Mode.
|
OCR Scan
|
PDF
|
MG50J6ES50
TjS125Â
|
P channel 50A IGBT
Abstract: No abstract text available
Text: SILICON N CHANNEL IGBT GT50J301 Unit in mm HIGH PO W ER SW ITCHIN G APPLICATIONS M O T O R CON TROL APPLICATIONS 2 0.5 MAX. 0 3 3 ±0.2 The 3rd Generation Enhancement-Mode High Speed : tf=0.30/us Max. Low Saturation Voltage : VcE(sat) = 2.7V (Max.) FRD Induded Between Em itter and Collector
|
OCR Scan
|
PDF
|
GT50J301
30/us
P channel 50A IGBT
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A MG50J2YS50 MG50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4 -F A S T -O N -T A B # 1 1 0 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One
|
OCR Scan
|
PDF
|
MG50J2YS50
2-94D1A
TjS125Â
|
P channel 600v 50a IGBT
Abstract: P channel 600v 30a IGBT P channel 50A IGBT MIG50J904H
Text: TOSHIBA TENTATIVE MIG50J904H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG50J904H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter, Converter and Brake Power Circuits in One Package. Output Inverter Stage
|
OCR Scan
|
PDF
|
MIG50J904H
0A/600V
15/is
0A/800V
961001EAA1
P channel 600v 50a IGBT
P channel 600v 30a IGBT
P channel 50A IGBT
MIG50J904H
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE MG50Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 50 Q 6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf= 0 .3 /iS Max. Inductive Load Low Saturation Voltage
|
OCR Scan
|
PDF
|
MG50Q6ES50
6ES50
961001EAA1
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A MG50J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J6ES50 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IGBTs B uilt Into 1 Package.
|
OCR Scan
|
PDF
|
MG50J6ES50
2-94A2A
961001EAA2
100//S*
|
|
|
MG50N2YS9
Abstract: P channel 50A IGBT
Text: GTR MODULE_ SILICON N CHANNEL IGBT MG50N2YS9 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf=l.Oys Max. trr=0.5ys(Max.) . Low Saturation Voltage: VcE(sat)=5.0V(Max.) . Enhancement-Mode
|
OCR Scan
|
PDF
|
MG50N2YS9
00A/AS
MG50N2YS9
P channel 50A IGBT
|
la7200
Abstract: MG50N2YS
Text: MG50N2YS1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf=1.Oys Max. trr=0.5<Js(Max.) . Low Saturation Voltage: VcE(sat)= 5.0V(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in One
|
OCR Scan
|
PDF
|
MG50N2YS1
El/08
la7200
MG50N2YS
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A MG50J2YS50 MG50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4 -F A S T -O N -T A B # 1 1 0 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One
|
OCR Scan
|
PDF
|
MG50J2YS50
2-94D1A
100//S*
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MG50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M f i R O M Y<;<5il HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. 4 -F A S T -O N -T A B # 110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One
|
OCR Scan
|
PDF
|
MG50J2YS50
2-94D1A
|
td 4950
Abstract: MG50J6ES50
Text: TOSHIBA M G50J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J6ES50 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • 4-0 5.5 ± 0.3 7-M4 The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.
|
OCR Scan
|
PDF
|
MG50J6ES50
G50J6ES50
2-94A2A
961001EAA2
td 4950
MG50J6ES50
|
DC MOTOR CONTROL IGBT
Abstract: ES50A
Text: TO SHIBA TENTATIVE MG50Q6ES50A TOSHIBA GTR MODULE MG50Q SILICON N CHANNEL IGBT ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage
|
OCR Scan
|
PDF
|
MG50Q6ES50A
MG50Q
ES50A
961001EAA1
DC MOTOR CONTROL IGBT
ES50A
|
Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE MG50Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage
|
OCR Scan
|
PDF
|
MG50Q6ES50A
961001EAA1
|
MG50N2YS9
Abstract: No abstract text available
Text: GTR MODULL SILICON N CHANNEL IGBT MG50N2YS9 HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf "1. 0/is Max. trr=0.5us(Max.) . Low Saturation Voltage: (sat:)~5.OV(Max .) . Enhancement-Mode . includes a CompLete Half Bridge in One
|
OCR Scan
|
PDF
|
MG50N2YS9
MG50N2YS9
|
on semiconductor 50-5G
Abstract: No abstract text available
Text: TOSHIBA M G50J6ES50 TOSHIBA GTR MODULE m n SILICON N CHANNEL IGBT i f i F <; ç n HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance, 6 IGBTs Built Into 1 Package. Enhancement-Mode.
|
OCR Scan
|
PDF
|
G50J6ES50
on semiconductor 50-5G
|
DIODE JS
Abstract: MG50H2YS1
Text: GTR MODULE SILICON N CHANNEL IGBT MG50H2YS1 HIGH POWER S W I T C H I N G A P P LICATIONS. M O T O R CONT R O L APPLICATIONS. FEATURES: . High In p u t Impedance . High Speed . . . . : t f =1. Ojjs Max. t r r = 0 .5 ms (Ma x .) Low S a t u r a t i o n V o lta g e : VcE ( s a t ) = 5 . OV (M;
|
OCR Scan
|
PDF
|
MG50H2YS1
cio01
DIODE JS
MG50H2YS1
|
