GT50J301
Abstract: bipolar power transistor data toshiba set igbt on off Vge
Text: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
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GT50J301
GT50J301
bipolar power transistor data toshiba
set igbt on off Vge
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GT50J301
Abstract: No abstract text available
Text: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. Low saturation voltage : VCE (sat) = 2.7V (Max.)
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GT50J301
2-21F2C
GT50J301
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gt50j301
Abstract: No abstract text available
Text: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third generation IGBT z Enhancement mode type z High speed : tf = 0.30µs Max. z Low saturation voltage
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GT50J301
2-21F2C
gt50j301
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Untitled
Abstract: No abstract text available
Text: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd Generation l Enhancement−Mode l High Speed : tf = 0.30µs Max. l Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
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GT50J301
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GT50J301
Abstract: No abstract text available
Text: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third generation IGBT z Enhancement mode type z High speed : tf = 0.30 s Max. z Low saturation voltage
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GT50J301
GT50J301
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Untitled
Abstract: No abstract text available
Text: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
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GT50J301
2-21F2C
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GT30J124
Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
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BCE0010E
BCE0010F
GT30J124
GT30F123
GT45F122
gt30g122
gt40j323
gt30g123
gt30f122
IGBT GT30J124
GT45f122 Series
gt45f123
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STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
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2002-Sep.
STR-G6551
STR-F6654
g6551
TDA16822
STR-F6653
strg6551
IGBT cross reference
KA5M0565R
TOP224Y equivalent
BUP 312
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GT30F124
Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
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BCE0010F
GT30F124
GT30J124
GT30F123
gt30g124
GT45F122
*45F122
GT30F124 Equivalent
*30g122
gt30g122
gt30f122
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GT50J101
Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Text: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive
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IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004R
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
IGBT GT30F124
IGBT GT30J124
GT30F124
GT30J124
GT50N322
tk25e06k3
TPCP8R01
TK12A10K3
GT30G124
2SK3075
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s5j53
Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require
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E0010A
BCE0010A
3503C-0109
s5j53
S5783F
GT30J322
S5783
Electronic IH rice cooker
GT50j101
MG30T1AL1
igbt induction cooker
MG60M1AL1
mosfet 500V 50A
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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Untitled
Abstract: No abstract text available
Text: TO S H IBA GT50J301 T O S H IB A IN S U L A T E D G ATE B IP O L A R TR A N S IS T O R SILICO N N C H A N N E L IG BT GT50J301 Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S M O T O R C O N T R O L A P P L IC A T IO N S Z0.5M AX. The 3rd Generation
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GT50J301
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT50J301 T O S H IB A IN SU LA TED GATE B IP O LA R TRA N SISTO R SILICON N C H A N N EL IGBT GT50J301 HIGH P O W E R SW ITC H IN G A PPLIC A TIO N S U nit in mm M O T O R CO N TRO L A PPLIC A TIO N S 20.5MAX. ¡2 3.3 ±0.2 The 3rd Generation Enhancement-Mode
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GT50J301
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vgea
Abstract: GT50J301
Text: TOSHIBA GT50J301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N C HANN EL IGBT GT50J301 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 20.5MAX. The 3rd Generation Enhancement-Mode High Speed : tf^O.SO/^s Max. Low Saturation Voltage : V ce (sat) —2.7V (Max.)
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GT50J301
00A/jus
vgea
GT50J301
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT50J301 TO S H IB A IN S U LA TED G A T E B IP O LA R TR A N SISTO R SILICO N N C H A N N EL IG BT GT50J301 HIGH PO W ER SW ITC H IN G A P PLIC A TIO N S U nit in mm M O TO R C O N TR O L A P PLIC A TIO N S The 3rd Generation Enhancement-Mode High Speed
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GT50J301
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P channel 50A IGBT
Abstract: No abstract text available
Text: SILICON N CHANNEL IGBT GT50J301 Unit in mm HIGH PO W ER SW ITCHIN G APPLICATIONS M O T O R CON TROL APPLICATIONS 2 0.5 MAX. 0 3 3 ±0.2 The 3rd Generation Enhancement-Mode High Speed : tf=0.30/us Max. Low Saturation Voltage : VcE(sat) = 2.7V (Max.) FRD Induded Between Em itter and Collector
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GT50J301
30/us
P channel 50A IGBT
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IC LM3
Abstract: No abstract text available
Text: GT50J301 U nit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S M O T O R C O N T R O L A P P L IC A T IO N S 20 5 MAX. 8>3 3 t 0 2 The 3rd Generation Enhancement-M ode H ig h sp eed : tf= 0.30/iS Max. Low Saturation Voltage : V cE(sat) = 2-7V (Max.)
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GT50J301
30/iS
2-21F2C
IC LM3
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gt5q
Abstract: No abstract text available
Text: T O SH IB A GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5QJ3Q1 HIGH POWER SWITCHING APPLICATIONS U nit in mm MOTOR CONTROL APPLICATIONS i- K The 3rd Generation : 1.5 Enhancement-Mode H ig h sp e e d 0 3 .3 ± 0.2 20.5 MAX. o
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GT50J301
gt5q
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S5J53
Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction
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200-V
400J101H
MG75J1BS11
MG25J1B511
MG50J1BS11
MG100J1BS11
MG150J1BS11
MG25Q1BS11
MG50Q1BS11
MG75Q1BS11
S5J53
MIG30J103H
200J2
S5J25
mg7502ys
MG150J1JS50
MIG100Q201H
GT60M301
MIG30J103HB
MP6753
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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2sC5200, 2SA1943, 2sc5198
Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428
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2SA817A
2SA940
2SA949
2SA965
2SA966
2SA1012
2SA1013
2SA1020
2SA1145
2SA1160
2sC5200, 2SA1943, 2sc5198
GTI5Q101
2sc5039
2SC4532
2SD2088
2SC3303
2sC5200, 2SA1943
2SA1803
2sc4408
GT10G102
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