NX5312EH Search Results

NX5312EH Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NX5312EH		NEC	Laser Diode, InGaAsP MQW-FP Laser Diode		Original	PDF
NX5312EH-AZ		California Eastern Laboratories	1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE		Original	PDF
NX5312EH-AZ		California Eastern Laboratories	NECs 1310 Nm InGaAsP MQW FP Laser Diode In Can Package For 155 Mb/s 622 Mb/s 1.25 Gb/s Applications		Original	PDF

NX5312EH Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NX5312 Abstract: NX5312EH NX5312EH-AZ NX5312EK NX5312EK-AZ Text: LASER DIODE NX5312 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5312 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.	Original	PDF	NX5312 PL10528EJ02V0DS NX5312EH NX5312EH-AZ NX5312EK NX5312EK-AZ
Untitled Abstract: No abstract text available Text: DATA SHEET LASER DIODE NX5312 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5312 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.	Original	PDF	NX5312
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original	PDF
10 gb laser diode 1310 nm Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5312 SERIES FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 5.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY:	Original	PDF	NX5312 10 gb laser diode 1310 nm
NX5312 Abstract: NX5312EH NX5312EH-AZ NX5312EK NX5312EK-AZ Text: PRELIMINARY DATA SHEET NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5312 SERIES FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 5.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY:	Original	PDF	NX5312 NX5312EH NX5312EH-AZ NX5312EK NX5312EK-AZ
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
NEC JAPAN Abstract: NX5312 NX5312EH NX5312EK PX10160E Text: PRELIMINARY DATA SHEET LASER DIODE NX5312 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5312 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These	Original	PDF	NX5312 NEC JAPAN NX5312EH NX5312EK PX10160E