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Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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NX5310
Abstract: NX5310EH NX5310EK PX10160E
Text: PRELIMINARY DATA SHEET LASER DIODE NX5310 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5310 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These
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NX5310
NX5310EH
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Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5310 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5310 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These
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NX5310
Abstract: NX5310EH NX5310EH-AZ NX5310EK NX5310EK-AZ
Text: LASER DIODE NX5310 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5310 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.
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NX5310
PL10526anty
NX5310EH
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NX5310
Abstract: NX5310EH NX5310EH-AZ NX5310EK NX5310EK-AZ
Text: PRELIMINARY DATA SHEET NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5310 SERIES FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s AND FTTH APPLICATIONS FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: Po = 5.0 mW NECʼs NX5310 Series is a 1310 nm Multiple Quantum Well
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NX5310
NX5310EH
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Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5310 SERIES FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s AND FTTH APPLICATIONS FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: Po = 5.0 mW NEC’s NX5310 Series is a 1310 nm Multiple Quantum Well
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