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    NTR1P02T3G Search Results

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    onsemi NTR1P02T3G

    MOSFET P-CH 20V 1A SOT23-3
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    NTR1P02T3G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTR1P02T3G On Semiconductor NTR1P02 - TRANSISTOR 1000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, LEAD FREE, MINIATURE, CASE 318-09, TO-236, 3 PIN, FET General Purpose Small Signal Original PDF
    NTR1P02T3G On Semiconductor Transistor Mosfet P-CH 20V 1A 3 pin SOT-23 T/R Original PDF

    NTR1P02T3G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NVR1P02T1G

    Abstract: No abstract text available
    Text: NTR1P02T1, NVR1P02T1 Power MOSFET −20 V, −1 A, P−Channel SOT−23 Package Features • Ultra Low On−Resistance Provides Higher Efficiency • • • • • and Extends Battery Life RDS on = 0.180 W, VGS = −10 V RDS(on) = 0.280 W, VGS = −4.5 V


    Original
    PDF NTR1P02T1, NVR1P02T1 OT-23 AEC-Q101 NTR1P02T1/D NVR1P02T1G

    Untitled

    Abstract: No abstract text available
    Text: NTR1P02T1, NVR1P02T1 Power MOSFET −20 V, −1 A, P−Channel SOT−23 Package Features • Ultra Low On−Resistance Provides Higher Efficiency • • • • • and Extends Battery Life RDS on = 0.180 W, VGS = −10 V RDS(on) = 0.280 W, VGS = −4.5 V


    Original
    PDF NTR1P02T1, NVR1P02T1 NTR1P02T1/D

    NTR1P02T1G

    Abstract: NTR1P02T1 NTR1P02T3 NTR1P02T3G mosfet marking code AL sot-23
    Text: NTR1P02T1 Power MOSFET −20 V, −1 A, P−Channel SOT−23 Package Features • Ultra Low On−Resistance Provides Higher Efficiency • • • • and Extends Battery Life RDS on = 0.180 W, VGS = −10 V RDS(on) = 0.280 W, VGS = −4.5 V Power Management in Portable and Battery−Powered Products


    Original
    PDF NTR1P02T1 OT-23 NTR1P02T1/D NTR1P02T1G NTR1P02T1 NTR1P02T3 NTR1P02T3G mosfet marking code AL sot-23

    Untitled

    Abstract: No abstract text available
    Text: NTR1P02, NVR1P02 Power MOSFET −20 V, −1 A, P−Channel SOT−23 Package Features • Ultra Low On−Resistance Provides Higher Efficiency • • • • • and Extends Battery Life RDS on = 0.180 W, VGS = −10 V RDS(on) = 0.280 W, VGS = −4.5 V Power Management in Portable and Battery−Powered Products


    Original
    PDF NTR1P02, NVR1P02 OT-23 AEC-Q101 NTR1P02T1/D

    STP4119

    Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
    Text: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices


    Original
    PDF SG388/D May-2007 STP4119 Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a