SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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0903010
Abstract: 2SC3816 E090101 NE0900-07
Text: CLASS C, 940 MHz, 7 VOLT POWER TRANSISTOR *£*¡2 , NEM090701-07 FEATURES DESCRIPTION • HIGH PO W ER AN D GAIN The NE0900-07 and N E M 0900-07 series of NPN silicon epitaxial UH F power transistors are designed specifically for hand-held radio applications with a supply voltage of 7.2 V.
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NEM090701-07
NE0900-07
NEM0900-07
0903010
2SC3816
E090101
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2SC3814
Abstract: NE0900-07 2SC3816 2SC3815
Text: CLASS C, 940 MHz, 7 VOLT POWER TRANSISTOR n e m 090701-07 FEATURES DESCRIPTION • HIGH PO W ER AN D GAIN The NE0900-07 and N EM 0900-07 series of NPN silicon epitaxial UHF power transistors are designed specifically for hand-held radio applications with a supply voltage of 7.2 V.
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NE0900-07
NEM0900-07
2SC3814
2SC3816
2SC3815
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NEL1320
Abstract: No abstract text available
Text: Power Silicon Bipolar Selection Guide UHF DEVICES: 500 MHz to 1 GHz Part Mambar Pact*«« Style Fn^MNf Range BHl ta * lt Valtoge W rot cun « O f n iH (dBm) Poiit (W> Pour Gain (dBm) Efficiency (%) -fû t ftgt^ vw M mmI H M l M al " “ dWW. H a nd H e ld A p p lic a tio n s : 7 V o lt S u p p ly, C la s s C
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NEM090701-07
NEM090301
NE090101-
NE081091-12
NE081090-12
NE080491-12
NE080490-12
NE080190-12
NE080191-12
NEM0M081B-28
NEL1320
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