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    NE43 Price and Stock

    Eaton Bussmann NRNE435F5070B1G

    THERMISTOR 430K OHM 5070 BETA
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    DigiKey NRNE435F5070B1G Bulk 2,000
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    Sager NRNE435F5070B1G 500
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    • 1000 $0.1222
    • 10000 $0.1069
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    BOYD Laconia 6398B-P2-CNE43G

    THM,6398B-P2-CNE43G
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    DigiKey 6398B-P2-CNE43G Bulk 69
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    • 100 $11.27304
    • 1000 $11.27304
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    Mouser Electronics 6398B-P2-CNE43G
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    Sager 6398B-P2-CNE43G 1,000
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    SiTime Corporation SIT3373AI-2B9-33NE432.000000

    MEMS OSC VCXO 432.0000MHZ LVDS
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    DigiKey SIT3373AI-2B9-33NE432.000000 1
    • 1 $11.21
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    • 100 $9.8128
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    SiTime Corporation SIT3373AI-1B3-25NE432.000000

    MEMS OSC VCXO 432.0000MHZ LVPECL
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    DigiKey SIT3373AI-1B3-25NE432.000000 1
    • 1 $10.19
    • 10 $9.557
    • 100 $8.9202
    • 1000 $7.96443
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    SiTime Corporation SIT3373AI-4E2-33NE432.000000

    MEMS OSC VCXO 432.0000MHZ HCSL
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    DigiKey SIT3373AI-4E2-33NE432.000000 1
    • 1 $13.29
    • 10 $12.436
    • 100 $11.5779
    • 1000 $11.40642
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    NE43 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE434S01 NEC Semiconductor Selection Guide Original PDF
    NE434S01 NEC C BAND SUPER LOW NOISE HJ FET Original PDF
    NE434S01 NEC C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE434S01-T1 NEC C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE434S01-T1B NEC C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF

    NE43 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1E-14

    Abstract: No abstract text available
    Text: NONLINEAR MODEL SCHEMATIC NE434S01 CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Q1 0.62nH Rdx 3 ohms Rgx 0.72nH 3 ohms Lsx 0.07nH CGS_PKG 0.05pF CDS_PKG 0.06PF Rsx 0.06 ohms SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1 Parameters Q1 Parameter VTO -0.806


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    PDF NE434S01 001pF 1e-14 7e-12 12e-12 42e-12 04e-12 24-Hour

    NE434S01

    Abstract: NE434S01-T1 NE434S01-T1B
    Text: PRELIMINARY DATA SHEET C BAND SUPER LOW NOISE HJ FET NE434S01 FEATURES MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY • HIGH ASSOCIATED GAIN: 15.5 dB TYP at 4 GHz • GATE WIDTH: 280 µm • TAPE & REEL PACKAGING OPTION AVAILABLE • LOW COST PLASTIC PACKAGE


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    PDF NE434S01 NE434S01 NE434S01-T1 NE434S01-T1B 24-Hour NE434S01-T1 NE434S01-T1B

    transistor NEC D 822 P

    Abstract: NEC D 822 P C10535E NE434S01 NE434S01-T1 NE434S01-T1B
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


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    PDF NE434S01 NE434S01 NE434S01-T1B transistor NEC D 822 P NEC D 822 P C10535E NE434S01-T1 NE434S01-T1B

    NE70083

    Abstract: NE372800 AN83901 NE372 NE71083 Matching Transformer - line matching transformed AN-PF-1007
    Text: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,


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    PDF AN-PF-1007 NE430, NE345L, NE372 24-Hour NE70083 NE372800 AN83901 NE71083 Matching Transformer - line matching transformed AN-PF-1007

    NE70083

    Abstract: NE372 planar transformer theory small signal GaAs FET x-band microwave fet NE71083 DLI-1988-1
    Text: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,


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    PDF AN-PF-1007 NE430, NE345L, NE372 NE70083 planar transformer theory small signal GaAs FET x-band microwave fet NE71083 DLI-1988-1

    NE434S01

    Abstract: NE434S01-T1 NE434S01-T1B TVRO
    Text: PRELIMINARY DATA SHEET C BAND SUPER LOW NOISE HJ FET NE434S01 FEATURES MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: 0.35 dB TYP at 4 GHz • GATE WIDTH: 280 µm • TAPE & REEL PACKAGING OPTION AVAILABLE • LOW COST PLASTIC PACKAGE


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    PDF NE434S01 NE434S01 NE434S01-T1B NE434S01-T1 24-Hour NE434S01-T1 NE434S01-T1B TVRO

    jis s25c

    Abstract: scm435 T4 1060 JIS-10K S25C n210b S25C SUS-630 PN100 SUS316 SUS316L
    Text: EJA 智能变送器 产品简介: EJA智能变送器是日本横河电机株式会社最新推出的产品,率先采用数 字化传感器—单晶硅谐振式 传感器,传感器输出一对差值数字信号,在传感器部分直接消除外界干


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    PDF EJA438W EJA438WEJA438N 4-20mADC EJA438NBRAINCENTUM EJA438N EJA438W-DASJ1AA-AA01-92NN 4-20mA jis s25c scm435 T4 1060 JIS-10K S25C n210b S25C SUS-630 PN100 SUS316 SUS316L

    MR-01-75

    Abstract: MR0175 3051CD 0-25inH2O 3051CG PDS00813-0100-4016 0-250inH2O MR01-75 3051c DN50
    Text: 3051C 型差压,表压与绝对压力变送器 -=不提供 •=提供 型号 变送器类型 选其一 CD CG CA 3051CD 差压变送器 · - - 3051CG 表压变送器 - · - 3051CA 绝对压力变送器 - - · CD CG CA 代码 压力范围(URL)(选其一)


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    PDF 3051C 3051CD 3051CG 3051CA 0-260mmHga) 0-25inH2O 22kPa) MR-01-75 MR0175 3051CD 0-25inH2O 3051CG PDS00813-0100-4016 0-250inH2O MR01-75 3051c DN50

    scm435

    Abstract: SUS630 DIN19213 FF15 SUS304 SUS316 SUS316L SUH660 EJA130A-DMS5A-92NN
    Text: EJA 智能变送器 产品简介: EJA智能变送器是日本横河电机株式会社最新推出的产品,率先采用数 字化传感器—单晶硅谐振式 传感器,传感器输出一对差值数字信号,在传感器部分直接消除外界干


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    PDF EJA130A 4-20mADCEJA130ABRAIN HART275 EJA130A-DMS5A-92NN 4-20mA 1-100KPa 5-500KPa scm435 SUS630 DIN19213 FF15 SUS304 SUS316 SUS316L SUH660 EJA130A-DMS5A-92NN

    pt100 interface current source multiplexer

    Abstract: pt100 sensor with adc 4-20mA pt100 sensor interface with microcontroller DN2540 NE43 XTR108 XTR108EA Voltage to Current Converter dual 4-20mA scheme xtr 110 RTD signal conditioning theory
    Text: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


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    PDF XTR108 SBOS187C 4-20mA, 4-20mA SSOP-24 XTR108 pt100 interface current source multiplexer pt100 sensor with adc 4-20mA pt100 sensor interface with microcontroller DN2540 NE43 XTR108EA Voltage to Current Converter dual 4-20mA scheme xtr 110 RTD signal conditioning theory

    Untitled

    Abstract: No abstract text available
    Text: XTR XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


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    PDF XTR108 SBOS187C 4-20mA, 4-20mA SSOP-24 XTR108

    JIS-10K-50A

    Abstract: JIS-10K-40A JIS-10K-50A flange size JIS-30K-50A JIS-20K-50A flange size JIS-20K-40A JIS-30K-40A material SCS14A JIS-20K-50A JIS-10
    Text: SMALL FLANGE LEVEL TRANSMITTER FKY.4 DATA SHEET The FCX–A2 small flange level transmitter accurately measures liquid level and transmits a proportional 4 to 20mA signal. The transmitter utilizes a unique micromachined capacitance silicon sensor with state-of-the-art microprocessor technology to provide exceptional performance and functionality.


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    PDF ANSI/JPI-300LB-1 ANSI/JPI-300LB-2B JIS-10K-50A JIS-10K-40A JIS-10K-50A flange size JIS-30K-50A JIS-20K-50A flange size JIS-20K-40A JIS-30K-40A material SCS14A JIS-20K-50A JIS-10

    DN40 PN16

    Abstract: ISO2852 hart communicator AISI316L din 16288
    Text: FlexBar 3501 Pressure Transmitter 4.20 mA, 2-wire transmitter, HART communication Optional Stainless steel heavy duty housing with LC-Display (Optional) Configurable span, unit, damping and linearisation Turn down 25:1 Accuracy better than 0.1% Zero point adjustment


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    PDF UK/2009-02-20 DN40 PN16 ISO2852 hart communicator AISI316L din 16288

    quick 850a esd

    Abstract: No abstract text available
    Text: User's Guide SBOU123 – March 2012 XTR108EVM-USB Evaluation Board and Software Tutorial This user's guide describes the characteristics, operation and use of the XTR108EVM-USB evaluation module EVM . This EVM is designed to evaluate the performance of the XTR108, an SPI programmable, current- or voltage-output, two-wire transmitter designed for temperature and bridge


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    PDF SBOU123 XTR108EVM-USB XTR108, XTR108EVM-USB. quick 850a esd

    diode in58

    Abstract: OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908
    Text: Interface Technology and Switching Devices 2013 / 2014 7 PCB connection technology and electronics housing • PCB terminal blocks and plug-in connectors • Electronics housing Connection technology for field devices • Plug-in connectors • Cables and connectors


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    PDF unitB-FLK50/0 VIP-CAB-FLK50/0 VIP-CAB-FLK50/FR/OE/0 diode in58 OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908

    Untitled

    Abstract: No abstract text available
    Text: MAX5216LPT Evaluation Kit Evaluates: Reference Design of 4 –20mA Loop-Powered Transmitter General Description Features The MAX5216LPT evaluation kit EV kit enables evaluation of the loop-powered 4–20mA current-loop transmitter with the fault current-limiting capabilities and Highway


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    PDF MAX5216LPT MAX5216 16-bit MAX6133 MAX9620 MAX15007

    Siemens PT100 temperature sensor

    Abstract: siemens a5e00 Siemens PT100 temperature sensor RTD Siemens PT100 temperature sensor din iec 60751 siemens ad2 c11 Siemens Ni1000 temperature sensor siemens thermocouple Siemens PT100 w Siemens K11 KEMA 01 ATEX 1264
    Text: 2 Siemens AG 2015 Temperature Measurement 2/2 2/7 2/11 2/18 2/25 2/31 2/38 2/45 Product overview Transmitters for mounting in sensor head SITRANS TH100 two-wire system Pt100 SITRANS TH200 two-wire system universal SITRANS TH300 two-wire system universal, HART


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    PDF TH100 Pt100) TH200 TH300 TH400 TR200 TR300 TF280 Siemens PT100 temperature sensor siemens a5e00 Siemens PT100 temperature sensor RTD Siemens PT100 temperature sensor din iec 60751 siemens ad2 c11 Siemens Ni1000 temperature sensor siemens thermocouple Siemens PT100 w Siemens K11 KEMA 01 ATEX 1264

    fkc fuji

    Abstract: 22J 1KV ASTM nut and bolt 33J 4KV G5121 MR-01-75 NE43 teflon gasket ASTM A193 bolts M10
    Text: DIFFERENTIAL PRESSURE FLOW TRANSMITTER FKC.4 DATA SHEET The FCX–A2 differential pressure (flow) transmitter accurately measures differential pressure, liquid level, gauge pressure or flow rate and transmits a proportional 4 to 20mA signal. The transmitter utilizes a unique micromachined


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    PDF

    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


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    PDF V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518

    600t SMART Differential Pressure Transmitter abb

    Abstract: namur ne43 ISA pressure transmitter 2600T NE43 691HT coil gold detector 2600t SMART Differential Pressure Transmitter abb 600t SMART temperature Transmitter manual ABB pressure transmitter series 266
    Text: Operating instruction IM/266_8H_5 FieldIT 2600T Series Pressure Transmitters Models 266H/N Models 268H/N -1- ABB The Company EN ISO 9001: 1994 ABB is an established world force in the design and manufacture of instrumentation for industrial process control, flow measurement, gas and


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    PDF IM/266 2600T 266H/N 268H/N Q5907 600t SMART Differential Pressure Transmitter abb namur ne43 ISA pressure transmitter NE43 691HT coil gold detector 2600t SMART Differential Pressure Transmitter abb 600t SMART temperature Transmitter manual ABB pressure transmitter series 266

    TRANSISTOR K 2191

    Abstract: nec 2761
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm


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    PDF NE434S01 NE434S01 NE434S01-T1 NE434S01-T1B IR30-00 TRANSISTOR K 2191 nec 2761

    NEC Ga FET marking L

    Abstract: ap 2761 l transistor NEC D 822 P nec gaas fet marking nec 2761 NEC 426 NEC Ga FET low noise FET NEC U
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET D ES C R IP TIO N The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO


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    PDF NE434S01 NE434S01 NEC Ga FET marking L ap 2761 l transistor NEC D 822 P nec gaas fet marking nec 2761 NEC 426 NEC Ga FET low noise FET NEC U

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET C BAND SUPER LOW NOISE HJ FET NE434S01 FEATURES_ MAXIMUM AV A ILA B LE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: 0.35 dB TYP at 4 GHz • HIGH ASSOCIATED GAIN: 15.5 dB TYP at 4 GHz m td


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    PDF NE434S01 NE434S01 NE434S01-T1 NE434S01-T1B

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET C BAND SUPER LOW NOISE HJ FET NE434S01 FEATURES MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: 0.35 dB TYP at 4 GHz • HIGH ASSOCIATED GAIN: 15.5 dB TYP at 4 GHz • GATE WIDTH: 280 \xm • TAPE & REEL PACKAGING OPTION AVAILABLE


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    PDF NE434S01 NE434S01 NE434S01-T1 NE434S01-T1B 24-Hour