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    NDP605B Price and Stock

    National Semiconductor Corporation NDP605BEL

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NDP605BEL 3,204
    • 1 $1.5
    • 10 $1.5
    • 100 $1.5
    • 1000 $0.39
    • 10000 $0.375
    		Buy Now
    Bristol Electronics NDP605BEL 4,005 5
    • 1 -
    • 10 $1.125
    • 100 $0.4219
    • 1000 $0.315
    • 10000 $0.2925
    		Buy Now

    National Semiconductor Corporation NDP605B

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NDP605B 2,360
    • 1 $1.5
    • 10 $1.5
    • 100 $1.5
    • 1000 $0.39
    • 10000 $0.375
    		Buy Now
    Bristol Electronics NDP605B 2,950 5
    • 1 -
    • 10 $1.125
    • 100 $0.4219
    • 1000 $0.315
    • 10000 $0.2925
    		Buy Now

    NDP605B Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDP605B National Semiconductor TO-220AB DMOS Power MOSFETS Scan PDF
    NDP605B National Semiconductor N-Channel Enhancement Mode Power Fleid Effect Transistor Scan PDF
    NDP605BE National Semiconductor TO-220AB DMOS Power MOSFETS Scan PDF
    NDP605BEL National Semiconductor TO-220AB Logic Level DMOS Power MOSFETS Scan PDF
    NDP605BL National Semiconductor TO-220AB Logic Level DMOS Power MOSFETS Scan PDF

    NDP605B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NDP605BL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)10 I(D) Max. (A)44 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)132 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)-65õ


    Original     		PDF NDP605BL

    Untitled

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect


    Original     		PDF NDP605A/NDP605B, NDP606A/NDP606B NDP605B NDP606B NOP605B TL/G/11112-3 TL/G/11112-4

    NDP605A

    Abstract: ndp605A TO-220 NDP606A 025X C1995 NDP605B NDP606B 048X0 MX60
    Text: NDP605A NDP605B NDP606A NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary high cell density DMOS technology This very high density process has been especially tailored to minimize on-state resistance provide superior switching performance and withstand high energy pulses in the avalanche and commutation


    Original     		PDF NDP605A NDP605B NDP606A NDP606B ndp605A TO-220 025X C1995 NDP606B 048X0 MX60

    Untitled

    Abstract: No abstract text available
    Text: NDP605BEL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)10 I(D) Max. (A)44 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)132 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)-65õ


    Original     		PDF NDP605BEL

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    ndp606a

    Abstract: No abstract text available
    Text: National Semiconductor March 1993 NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high


    OCR Scan     		PDF NDP605A/NDP605B, NDP606A/NDP606B ndp606a

    78017

    Abstract: 7S1 zener diode NDP605A NDP605B NDP606A NDP606B
    Text: March 1993 Semiconductor NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high


    OCR Scan     		PDF NDP605A/NDP605B, NDP606A/NDP606B LSQ1130 78017 7S1 zener diode NDP605A NDP605B NDP606A NDP606B

    B5G1

    Abstract: ndp605A TO-220 NDP606A NDP605A NDP605B NDP606B zener diode u41
    Text: March 1993 Semiconductor NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high


    OCR Scan     		PDF NDP605A/NDP605B, NDP606A/NDP606B 0-1B0-534 B5G1 ndp605A TO-220 NDP606A NDP605A NDP605B NDP606B zener diode u41

    NDP406BL

    Abstract: NDP508AEL MTP3055EL ndp706al NDP610AL NDP606AL NDP405BL NDP605AL NDP405AL NDP510AL
    Text: *NSCS TO-220AB Logic Level DMOS \ Gii D, N Channel •o Pd Watts M ax 150 (m il) M ax (Amps/Volts) (Amps) Max 38 21/5 42 Device 60 NDP706AEL NDP710AL 42 21/5 40 NDP706BEL 13/5 26 100 NDP606AEL 12/5 24 NDP606BEL 120 7.5/5 15 60 NDP506AEL NDP708AEL 150 6.5/5


    OCR Scan     		PDF O-220AB NDP710AEL NDP710AL NDP710BEL NDP710BL NDP610AEL NDP610AL NDP610BEL NDP610BL NDP510AEL NDP406BL NDP508AEL MTP3055EL ndp706al NDP606AL NDP405BL NDP605AL NDP405AL NDP510AL

    NDP505A

    Abstract: NDP705AE NDP605A NDP405B NDP510A NDP510AE NDP510B NDP610A NDP610AE NDP610B
    Text: •NSCS 741 0031460 bSD113D TO-220AB DMOS N Channel N Channel rDS on @ ^ G S (Volts) Min Device (ma) Max 100 NDP710A •d rDS(on) @ lu/^GS Po (Volts) Min (Amps) (Watts) (Amps/Volts) Max Max 38 21/10 42 42 21/10 40 150 60 NDP710B ■ NDP610A 65 13/10 26 80


    OCR Scan     		PDF O-220AB NDP710A NDP710AE NDP710B NDP710BE NDP610A NDP610AE NDP610B NDP610BE NDP510A NDP505A NDP705AE NDP605A NDP405B NDP510AE NDP510B

    NDP406BL

    Abstract: DP408 DP706 NDP706AL NDP405AL DP608 NDP606AL P610BL P610B DP505
    Text: «NSCS Power MOSFETS continued N Channel r D S (o n | I q/^ G S (Volts) Min Device 100 NDP710AEL •n Pn r D S ( « l ) ® * d/ V B S (Amps) (Watts) (m ii) (Amps/Volts) Max Max Max 38 21/5 42 42 21/5 40 Min 150 NDP706AEL N DP710AL NDP710BEL Device (m a )


    OCR Scan     		PDF O-220AB NDP710AEL DP710AL NDP710BEL NDP710BL NDP610AEL DP610AL NDP610BEL P610BL NDP510AEL NDP406BL DP408 DP706 NDP706AL NDP405AL DP608 NDP606AL P610B DP505