NDB7061
Abstract: NDP7061 64a through hole diode
Text: N May 1996 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored
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NDP7061
NDB7061
NDB7061
64a through hole diode
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zener diode 3.0 b2
Abstract: m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L NDP7061L
Text: June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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NDP7061L
NDB7061L
zener diode 3.0 b2
m 9835
CBVK741B019
EO70
F63TNR
FDP7060
L86Z
NDB7061L
NDP4060L
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CBVK741B019
Abstract: EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L NDP7061L
Text: June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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NDP7061L
NDB7061L
CBVK741B019
EO70
F63TNR
FDP7060
L86Z
NDB7061L
NDP4060L
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NDB7061L
Abstract: NDP7061L
Text: N June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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NDP7061L
NDB7061L
NDB7061L
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CBVK741B019
Abstract: EO70 F63TNR FDP7060 L86Z NDB7061 NDP4060L NDP7061
Text: May 1996 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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NDP7061
NDB7061
CBVK741B019
EO70
F63TNR
FDP7060
L86Z
NDB7061
NDP4060L
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zener diode 3.0 b2
Abstract: zener diodes color coded BE 64A m 9835 FDP7060 L86Z NDB7061 NDP4060L NDP7061 CBVK741B019
Text: May 1996 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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NDP7061
NDB7061
zener diode 3.0 b2
zener diodes color coded
BE 64A
m 9835
FDP7060
L86Z
NDB7061
NDP4060L
CBVK741B019
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IRFZ44N complementary
Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
Text: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55
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BUK7508-55
BUK7514-55A
BUK7524-55A
BUK7530-55A
BUK7570-55A
BUZ100S
BUZ102S
BUZ110S
BUZ111S
IRF1010N
IRFZ44N complementary
IRF3205 COMPLEMENTARY
IRF3205 application
a/surface mount IRFZ44N
NBP6060
IRF3205 TO-220
philips 435-2
HRF3205
harris 4365
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mosfet cross reference
Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P
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2N7000
IRF7203
FDS9435A
2N7002
OT-23,
IRF7204
NDS8434A
BS170
mosfet cross reference
SMP40N06
SMP75N06-08
SI9952DY
SMP60N03-10L
IRFZ44 TO-263
Si9948DY
irf1010e equivalent
IRLL014N
NDT3055L
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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diode 8109
Abstract: DDH0312 NDB7061L NDP7061L W9 diode
Text: MCE N a t i o n a l Semiconductor • J u n e 1996 " NDP7061L/ NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using
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NDP7061L/
NDB7061L
bSD113D
004031b
bS01130
diode 8109
DDH0312
NDP7061L
W9 diode
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Untitled
Abstract: No abstract text available
Text: May 1996 N NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored
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NDP7061
NDB7061
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NDB7061
Abstract: NDP7061 LD 8105 d0403
Text: National Semiconductor" M ay 1 9 9 6 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDP7061
NDB7061
Ru99ed
D04031L
LD 8105
d0403
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transistor FS 18 SM
Abstract: No abstract text available
Text: June 1996 N NDP7061 L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode pow e r field effect transistors are produced using N ational's proprietary, high cell density, DMOS
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NDP7061
NDB7061L
transistor FS 18 SM
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T64A
Abstract: NDB7061 NDP7061
Text: M ay 1 9 9 6 N NDP7061 / NDB7061 N-Channel Enhancement M ode Field Effect Transistor General Description Features T h ese N -C hannel en h a n ce m e n t m o d e p o w er field effect transistors are p rod u ced u sin g N ational's proprietary, high cell d en sity, DMOS tech n o lo g y .
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NDP7061
NDB7061
NDB7061
T64A
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Untitled
Abstract: No abstract text available
Text: June 1996 N NDP7061 L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode p ow er field effect transistors are produced using National's proprietary, high cell density, DMOS
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NDP7061
NDB7061L
P7061L
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NDB7061L
Abstract: NDP7061 NDP7061L
Text: June 1 9 9 6 N NDP7061 L / N D B 7061L N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features T h e se lo g ic le v e l N -C h a n n e l e n h a n c e m e n t m o d e p o w e r field e ffe c t tr a n sisto r s are p r o d u c e d u s in g
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NDP7061
NDB7061L
NDP7061L
NDB7061L
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