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    Eaton Corporation A27CND25C016

    Contactors - Electromechanical DP STR 3P OPN 30A 480VCL 10-16A COM CTL
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    Mouser Electronics A27CND25C016
    • 1 $830.1
    • 10 $787.28
    • 100 $787.28
    • 1000 $787.28
    • 10000 $787.28
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    Eaton Cutler-Hammer A27CND25C016

    DP STARTER 3P OPEN 30A 480V COIL 10-16A COM CTL | Eaton - Cutler Hammer A27CND25C016
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS A27CND25C016 Bulk 5 Weeks 1
    • 1 $924.24
    • 10 $878.03
    • 100 $831.81
    • 1000 $831.81
    • 10000 $831.81
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    ND25C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    zener diode phc

    Abstract: zener phc 12 zener diode phc 10 zener PH-C zener diode phc 16 zener diode phc 24 zener PH-C 15 zener diode phc 12 nd25d zener diode phc 15
    Text: 1.0 µm BCD Process XDM10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 350V Trench Insulated BCD Process Description XDM10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for


    Original     		PDF XDM10 XDM10 zener diode phc zener phc 12 zener diode phc 10 zener PH-C zener diode phc 16 zener diode phc 24 zener PH-C 15 zener diode phc 12 nd25d zener diode phc 15

    zener diode phc 24

    Abstract: 350v ZENER DIODE -20/zener diode phc 24
    Text: 1.0 µm BCD Process XDM10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 350V Trench Insulated BCD Process Description Key Features XDM10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for


    Original     		PDF XDM10 XDM10 zener diode phc 24 350v ZENER DIODE -20/zener diode phc 24

    XDM10

    Abstract: ND32A "X-Fab" nd25c
    Text: 1.0 µm BCD Process XDM10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 350V Trench Insulated BCD Process Thick SOI material together with area efficient deep trench insulation allows the design of plenty of silicon islands separated by dielectrical insulation deep enough to construct vertical devices up to 350V.


    Original     		PDF XDM10 XDM10 ND32A "X-Fab" nd25c