NB111EH Search Results

NB111EH Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NB111EHNB222XJ		Unknown	Cross Reference Datasheet		Scan	PDF

NB111EH Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NB111 Abstract: 500n50 2N1104 NB311E LOW-POWER SILICON NPN nb111ej BC152 Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 fT Hz 35 35 35 35 35 35 35 35 35 35 30 30 30 30 30 30 30 30 35 40 180M 60M 150M 150M 20M 20M 20M 20M 300M 20M 35 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 50 50 100M 2N337A	Original	PDF	2SCS02 BFY50 BFX50 NB311E NB311F NB311X NB311Y TP5189 2N1104 NB111 500n50 LOW-POWER SILICON NPN nb111ej BC152
2N2222B Abstract: 2N2244 2N1104 NB311E Delco LOW-POWER SILICON NPN 2sc1449 BC175 2sc1571 2N2362 Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 fT Hz 35 35 35 35 35 35 35 35 35 35 30 30 30 30 30 30 30 30 35 40 180M 60M 150M 150M 20M 20M 20M 20M 300M 20M 35 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 50 50 100M 2N337A	Original	PDF	2SCS02 BFY50 BFX50 NB311E NB311F NB311X NB311Y TP5189 2N1104 2N2222B 2N2244 Delco LOW-POWER SILICON NPN 2sc1449 BC175 2sc1571 2N2362
NA21 npn Abstract: NA21E NB111 hf amplifier 600 watts NA21 NB111E NB011 NA21EG NR001E SSL-3 Text: NATL SENICOND {DISCRETE} 6 5 0 1130 N Â T L CL z Q. CM CM < z SEMICOND, Efl DISCRETE < 28C National mim Semiconductor NA21 (NPN) N A 22(PN P) T 35561 - 2 - 9 - [T~\| p a c k a g e and lead coding • 20 Volt/1.5 Amp rating ■ 1.2 Watts practical power dissipation (TO-92 PLUS TM)	OCR Scan	PDF	NB011EY NR001E NA22EG/J NB111EH/JQ4 NA21EG/J NB011EY NA21EG/J NB111EY NA21 npn NA21E NB111 hf amplifier 600 watts NA21 NB111E NB011 NA21EG SSL-3
40khz ultrasonic transmitter Abstract: 40KHZ ULTRASONIC NA01 nb111eh NR001E NB021EY toko k Text: Sö NATL SEHICOND {DISCRETE} NA01 NPN , NA02(PNP) 6 5 0 1 1 3 0 NA TL S E M I C O N D , DE I t.SD113G DG3SSS3 (D I S C R E T E ) _28C 35553 D National Semiconductor NA02(PNP) 80 mA complementary power transistors [~1~\| package and lead coding features • 20 Volt/800 mA Amp rating	OCR Scan	PDF	SD113G Volt/800 NB111EH/J NA01EG/J NR001E 380mW NR001E 40khz ultrasonic transmitter 40KHZ ULTRASONIC NA01 nb111eh NB021EY toko k
40khz ultrasonic transmitter Abstract: 40KHZ ULTRASONIC NB111 NB111EH "Ultrasonic" "transmitter" 40khz ultrasonic transmitter 12V k 3555 NA01EX NR001E NB021EY Text: 20 NATL SEHICOND {DISCRETE} 6501130 NATL SEMICOND, STr z a z a DISCRETE _28C 35553 NA02(PNP) 80 mA complementary power transistors [T~\| package and lead coding features • 20 Volt/800 mA Amp rating ■ Low V qe (sat) and V qe (sat) characteristics at §	OCR Scan	PDF	SD113G 800mA Volt/800 NB111EH/J NA01EG/J NR001E NA01EG/J 380mW 40khz ultrasonic transmitter 40KHZ ULTRASONIC NB111 NB111EH "Ultrasonic" "transmitter" 40khz ultrasonic transmitter 12V k 3555 NA01EX NB021EY
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
NB111E Abstract: NB011 NA21E nb111 NA21 NA21 npn L0121 NA22 NR001E NB111EH Text: NATL SENICOND {DISCRETE} 650 1130 NÂTL SEMICOND, "äfl DlfJ bSDllHD [][\|3S5bl S DISCRETE 28C 35561 T z D CL z fjgA National Q. CM CM < z NA21 (NPN) N A 22(PN P) z 1 .5 A m p c o m p le m e n ta ry p o w e r t r a n s is t o r s [T~\| p a c k a g e and lead coding	OCR Scan	PDF	JtSD113D nb011ey nr001e na22eg/j nb111eh/jq4 na21eg/j 700mW na21eg/j NB111E NB011 NA21E nb111 NA21 NA21 npn L0121 NA22 NB111EH