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    N308AD Price and Stock

    Rochester Electronics LLC ISL9N308AD3

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ISL9N308AD3 Bulk 919
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.33
    • 10000 $0.33
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    Fairchild Semiconductor Corporation ISL9N308AD3

    50A, 30V, 0.008ohm, N-Channel Power MOSFET, TO-251AA '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics ISL9N308AD3 69,975 1
    • 1 $0.3142
    • 10 $0.3142
    • 100 $0.2953
    • 1000 $0.2671
    • 10000 $0.2671
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    N308AD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    n308ad

    Abstract: ISL9N308AD3ST N-308 35KP ISL9N308AD3
    Text: PWM Optimized N308AD3 / N308AD3ST N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


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    PDF ISL9N308AD3 ISL9N308AD3ST 2600pF O-251AA) O-252 O-252) n308ad ISL9N308AD3ST N-308 35KP

    N-308A

    Abstract: TO-252 MOSFET
    Text: PWM Optimized N308AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


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    PDF ISL9N308AD3ST 2600pF O-252 N-308A TO-252 MOSFET

    n308ad

    Abstract: N-308
    Text: PWM Optimized N308AD3ST/ N308AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original
    PDF ISL9N308AD3ST/ ISL9N308AD3 2600pF O-252 O-252) O-251AA) n308ad N-308

    N-308

    Abstract: n308ad *n308ad
    Text: PWM Optimized N308AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original
    PDF ISL9N308AD3ST 2600pF O-252 N-308 n308ad *n308ad

    n308ad

    Abstract: N-308
    Text: N308AD3ST TM Data Sheet January 2001 File Number 30V, 0.008 Ohm, 50A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves


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    PDF ISL9N308AD3ST 2600pF n308ad N-308