Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MTP8N Search Results

    SF Impression Pixel

    MTP8N Price and Stock

    Rochester Electronics LLC MTP8N50E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MTP8N50E Bulk 245
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.23
    • 10000 $1.23
    Buy Now

    Aptina Imaging MTP8N50E

    Trans MOSFET N-CH Si 500V 8A 3-Pin(3+Tab) TO-220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical MTP8N50E 746 271
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.25
    • 10000 $1.25
    Buy Now

    Motorola Semiconductor Products MTP8N50

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MTP8N50 55
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    Motorola Semiconductor Products MTP8N50E

    TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,8A I(D),TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MTP8N50E 8
    • 1 $2.4745
    • 10 $1.9796
    • 100 $1.9796
    • 1000 $1.9796
    • 10000 $1.9796
    Buy Now
    MTP8N50E 5
    • 1 $2.4745
    • 10 $1.9796
    • 100 $1.9796
    • 1000 $1.9796
    • 10000 $1.9796
    Buy Now
    MTP8N50E 1
    • 1 $1.9688
    • 10 $1.9688
    • 100 $1.9688
    • 1000 $1.9688
    • 10000 $1.9688
    Buy Now
    Component Electronics, Inc MTP8N50E 195
    • 1 $2.31
    • 10 $2.31
    • 100 $1.73
    • 1000 $1.5
    • 10000 $1.5
    Buy Now

    onsemi MTP8N50E

    Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220 '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MTP8N50E 746 1
    • 1 $1.18
    • 10 $1.18
    • 100 $1.11
    • 1000 $1
    • 10000 $1
    Buy Now
    ComSIT USA MTP8N50E 238
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    MTP8N Datasheets (61)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTP8N06 Motorola TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM Original PDF
    MTP8N06E On Semiconductor TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate Original PDF
    MTP8N06E/D On Semiconductor TMOS POWER FET 8.0 AMPERES 60 VOLTS Original PDF
    MTP8N08 Motorola European Master Selection Guide 1986 Scan PDF
    MTP8N08 Motorola TMOS Power FET 8 Amp Scan PDF
    MTP8N08 Motorola Switchmode Datasheet Scan PDF
    MTP8N08 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MTP8N08 Unknown FET Data Book Scan PDF
    MTP8N08 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP8N10 Motorola European Master Selection Guide 1986 Scan PDF
    MTP8N10 Motorola TMOS Power FET 8 Amp Scan PDF
    MTP8N10 Motorola Switchmode Datasheet Scan PDF
    MTP8N10 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MTP8N10 Unknown FET Data Book Scan PDF
    MTP8N10 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP8N10E Motorola Switchmode Datasheet Scan PDF
    MTP8N10E Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP8N12 Motorola European Master Selection Guide 1986 Scan PDF
    MTP8N12 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MTP8N12 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    MTP8N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN569

    Abstract: MTP8N06E
    Text: MOTOROLA Order this document by MTP8N06E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP8N06E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 8.0 AMPERES 60 VOLTS


    Original
    PDF MTP8N06E/D MTP8N06E MTP8N06E/D* AN569 MTP8N06E

    NT 407 F MOSFET TRANSISTOR

    Abstract: MTP8N50E TMOS E-FET
    Text: MOTOROLA Order this document by MTP8N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP8N50E N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without


    Original
    PDF MTP8N50E/D MTP8N50E NT 407 F MOSFET TRANSISTOR MTP8N50E TMOS E-FET

    MTP8N45

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP8N45 TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original
    PDF MTP8N45 O-220AB MTP8N45

    MTM8N20

    Abstract: No abstract text available
    Text: , IJ nc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTM8N20 MTP8N20 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs B AMPERES These TMOS Power FETs are designed for medium voltage,


    Original
    PDF MTM8N20 MTP8N20 O-204) O-220) MTM8N20

    Untitled

    Abstract: No abstract text available
    Text: J.£.is.£.u ^s-mL-C-onauctoi -I 10 duct i, Line, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP8N60 N-Channel Mosfet Transistor • FEATURES • Drain Current-ID= 7.5A@ TC=25"C • Drain Source Voltage-


    Original
    PDF MTP8N60 O-220C

    MTP8N50

    Abstract: mtp8n
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP8N50 TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original
    PDF O-220AB MTP8N50 MTP8N50 mtp8n

    MTP8N50E

    Abstract: No abstract text available
    Text: TMOS E-FET. Power Field Effect Transistor MTP8N50E N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is


    Original
    PDF MTP8N50E r14525 MTP8N50E/D MTP8N50E

    Untitled

    Abstract: No abstract text available
    Text: 'j.ziis.u«_/ <zSsm.i-L-onau.etoi iJ^ioaucti, Una. C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTM8N20 MTP8N20 Power Field Effect Transistor N-Channal Enhancement-Mode Silicon Gate TMOS POWER FETs


    Original
    PDF MTM8N20 MTP8N20 O-204) O-220)

    MTP8N50E

    Abstract: No abstract text available
    Text: TMOS E−FET. Power Field Effect Transistor MTP8N50E N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced TMOS E−FET is


    Original
    PDF MTP8N50E r14525 MTP8N50E/D MTP8N50E

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP8N50E TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original
    PDF MTP8N50E O-220AB

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original
    PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    IAf630

    Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p


    Original
    PDF RRF620 2SK755 2SK782 TX124 IRFJ220 SFN02804 SFN02814 SFN204A3 YTF220 YTF620 IAf630 RS630 BUZ73 sfn02204 tx134 sgsp567 SGSP367 2SK400

    SO20N

    Abstract: MTP6N50E MTP8N50E SO16N, SOIC Package free 1N4148 mtp6n50 passive resonant snubber MC33157 MC33157DW MC33260
    Text: Order this publication as PBMC33157/D Semiconductor Components Group Analog, Logic and Discretes 20-July-1999 ides or v o r lf rP o e r l t l n ntro cy Co o C ge uen allasts d q i r e r B F pB Half he-Art m a L of-t escent e t r Sta Fluo Introduction The MC33157 is a half bridge controller and driver designed specifically


    Original
    PDF PBMC33157/D 20-July-1999 MC33157 SO20N MTP6N50E MTP8N50E SO16N, SOIC Package free 1N4148 mtp6n50 passive resonant snubber MC33157DW MC33260

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original
    PDF

    zvt boost converter

    Abstract: uc3855 Application Note D4602 500w power amplifier circuit diagram schematic 500w power amplifier circuit diagram SATURABLE CORE Saturable Core Square Wave Oscillator SEM-400 95160 UC3855 8 pin
    Text: U-153 UNITRODE CORPORATION UC3855A/B HIGH PERFORMANCE POWER FACTOR PREREGULATOR James P. Noon New Product Applications Engineer INTRODUCTION The trend in power converters is towards increasingly higher power densities. Usually, the method to achieve this is to increase the switching frequency,


    Original
    PDF U-153 UC3855A/B 100kHz. zvt boost converter uc3855 Application Note D4602 500w power amplifier circuit diagram schematic 500w power amplifier circuit diagram SATURABLE CORE Saturable Core Square Wave Oscillator SEM-400 95160 UC3855 8 pin

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original
    PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    transistor Electronic ballast "INDUCTION LAMP"

    Abstract: schematic diagram Electronic Ballast HID Motorola, AN1049 MC14046 AN1049 EB407 5000 watts PURE SINE WAVE inverter schematic diagram induction lamp electronic ballast for fluorescent lighting t8 motorola BR480/D
    Text: MOTOROLA Order this document by AN1543/D SEMICONDUCTOR APPLICATION NOTE AN1543 Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse ABSTRACT With a continuous growth rate of 20% per year, electronic


    Original
    PDF AN1543/D AN1543 AN1543/D* transistor Electronic ballast "INDUCTION LAMP" schematic diagram Electronic Ballast HID Motorola, AN1049 MC14046 AN1049 EB407 5000 watts PURE SINE WAVE inverter schematic diagram induction lamp electronic ballast for fluorescent lighting t8 motorola BR480/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP8N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP8N50E TMOS E-FET ™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n


    OCR Scan
    PDF MTP8N50E/D TP8N50E

    221A-06

    Abstract: AN569 MTP8N50E
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E-FET ™ High Energy Power FET MTP8N50E N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS on = °-8 OHM T h is a d va n ce d high vo lta g e T M O S E -F E T is d e sig n e d to


    OCR Scan
    PDF

    MTP8N50

    Abstract: TMOS Power FET 221A-06 AN569 TO-220-A6
    Text: MOTOROLA SC XSTRS/F F tflE D • b3b72SM DDTfl7DH SHT ■ M O T b MOTOROLA ■ SE M IC O N D U C T O R TECHNICAL DATA MTP8N50 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silico n Gate Y This T M O S Power FET is designed for high voltage, high speed


    OCR Scan
    PDF MTP8N50 MTP8N50 TMOS Power FET 221A-06 AN569 TO-220-A6

    MTP8N20

    Abstract: MTM8N20 221A-06 25CC
    Text: MOTOROLA SC XSTRS/R F bflE ]> • b3b7254 GDTflSbfi ÔÔ7 ■ M O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTM 8N20 MTP8N20 Designer's Data Sheet P o w e r Field E ffe c t T ran s is to r IM-Channel Enhancem ent-Mode S ilico n Gate T These TMOS Power FETs are designed fo r medium voltage,


    OCR Scan
    PDF bBb72S4 MTM8N20 MTP8N20 b3b7B54 MTP8N20 221A-06 25CC

    TP8N10

    Abstract: TP8N08 8n10 MTP8N08 8N10 mosfet MTP8N10 tp8n1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP8N08 MTP8N10 P o w e r Field E ffe c t T ra n sisto r N -C h ann el E n h an cem en t-M od e S ilic o n G ate T M O S T M O S PO W ER FETs 8 AM PERES rDS on = 0.5 O H M 80 and 100 V O LTS T h e s e T M O S P o w e r F E T s a r e d e s i g n e d f o r m e d i u m v o lt a g e ,


    OCR Scan
    PDF MTP8N08 MTP8N10 O-220AB TP8N10 TP8N08 8n10 8N10 mosfet MTP8N10 tp8n1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP8N06E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP8N06E TMOS E-FET ™ Pow er Field E ffect Transistor M otorola P referred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES 60 VOLTS


    OCR Scan
    PDF MTP8N06E/D

    MTA5N50E

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTA5N50E Fully Isolated T M O S E-FET ™ Power Field Effect TVansistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is high vo lta g e M O S F E T uses an ad v a n c e d te rm in a tio n


    OCR Scan
    PDF MTA5N50E AN1040. b3b725M MTA5N50E