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Motorola Semiconductor Products MTP6N60E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MTP6N60E		16			1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics MTP6N60 6.8A, 600V, 1.2OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	MTP6N60		3,298			1 $5.4 10 $5.4 100 $5.4 1000 $1.98 10000 $1.89	Buy Now
	MTP6N60		172			1 $6.81 10 $6.81 100 $3.178 1000 $2.951 10000 $2.951	Buy Now
	MTP6N60		20			1 $4.65 10 $3.41 100 $3.41 1000 $3.41 10000 $3.41	Buy Now
ComSIT USA	MTP6N60		42			1 - 10 - 100 - 1000 - 10000 -	Get Quote
SGS Thomson MTP6N60 6.8A, 600V, 1.2OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	MTP6N60		2,790			1 $5.4 10 $5.4 100 $5.4 1000 $1.98 10000 $1.89	Buy Now
	MTP6N60		880			1 $5.4 10 $5.4 100 $5.4 1000 $2.7 10000 $2.7	Buy Now

MTP6N Datasheets (32)

Part	Manufacturer	Description	Datasheet Type	PDF
MTP6N05	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MTP6N05	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
MTP6N06	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MTP6N06	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
MTP6N08	Motorola	European Master Selection Guide 1986	Scan	PDF
MTP6N0E	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MTP6N10	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
MTP6N10	Motorola	Switchmode Datasheet	Scan	PDF
MTP6N10	Motorola	European Master Selection Guide 1986	Scan	PDF
MTP6N10	Motorola	N-channel TMOS power FET. 100 V, 6 A, Rds(on) 0.8 Ohm.	Scan	PDF
MTP6N10	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MTP6N10	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
MTP6N10	Unknown	FET Data Book	Scan	PDF
MTP6N20	Motorola	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39	Scan	PDF

MTP6N55	Motorola	Switchmode Datasheet	Scan	PDF
MTP6N55	Motorola	European Master Selection Guide 1986	Scan	PDF
MTP6N55	Motorola	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39	Scan	PDF
MTP6N55	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MTP6N60	STMicroelectronics	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN	Original	PDF
MTP6N60	STMicroelectronics	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN	Original	PDF

MTP6N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP6N60 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	MTP6N60 O-220
Untitled Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP6N60E CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	MTP6N60E O-220AB
MTP6N6 Abstract: No abstract text available Text: MTP6N60E Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced MOSFET is	Original	PDF	MTP6N60E MTP6N60E/D MTP6N6
motorola mosfet MTP6N60E Abstract: MTP6N60E MTP6N6 AN569 Text: MOTOROLA Order this document by MTP6N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP6N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 600 VOLTS	Original	PDF	MTP6N60E/D MTP6N60E motorola mosfet MTP6N60E MTP6N60E MTP6N6 AN569
MTP6N55 Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP6N55 TO-220 N-CHANNEL POWER MOSFET ABSOLUTE MAXIMUM RATING: Drain – Source Voltage	Original	PDF	O-220 MTP6N55 MTP6N55
MTP6N60 Abstract: No abstract text available Text: MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED	Original	PDF	MTP6N60 100oC O-220 MTP6N60
Untitled Abstract: No abstract text available Text: Cx / i, LJ nc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP6N60 N-Channel Mosfet Transistor FEATURES • Drain Current -ID= 6A@ TC=25°C • Drain Source Voltage1 0(2) •, ^f£\ /-s, : VDSs= 600V(Min)	Original	PDF	MTP6N60 O-220C
MTP6N6 Abstract: MTP6N60 Text: MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 • ■ ■ ■ ■ VDSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED	Original	PDF	MTP6N60 100oC O-220 MTP6N6 MTP6N60
MTP6N6 Abstract: MTP6N60E equivalent MTP6N60E AN569 mtp6n mosfet transistor 400 volts.100 amperes Text: TMOS E-FET. Power Field Effect Transistor MTP6N60E ON Semiconductor Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading	Original	PDF	MTP6N60E r14525 MTP6N60E/D MTP6N6 MTP6N60E equivalent MTP6N60E AN569 mtp6n mosfet transistor 400 volts.100 amperes
MTP6N60E equivalent Abstract: MTP6N60E/D equivalent MTP6N60E motorola mosfet MTP6N60E AN569 Text: MOTOROLA Order this document by MTP6N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP6N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination	Original	PDF	MTP6N60E/D MTP6N60E MTP6N60E equivalent MTP6N60E/D equivalent MTP6N60E motorola mosfet MTP6N60E AN569
MTP6N60 Abstract: MTP6N6 12 v smps Text: MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED	Original	PDF	MTP6N60 100oC O-220 MTP6N60 MTP6N6 12 v smps
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	PDF	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
SO20N Abstract: MTP6N50E MTP8N50E SO16N, SOIC Package free 1N4148 mtp6n50 passive resonant snubber MC33157 MC33157DW MC33260 Text: Order this publication as PBMC33157/D Semiconductor Components Group Analog, Logic and Discretes 20-July-1999 ides or v o r lf rP o e r l t l n ntro cy Co o C ge uen allasts d q i r e r B F pB Half he-Art m a L of-t escent e t r Sta Fluo Introduction The MC33157 is a half bridge controller and driver designed specifically	Original	PDF	PBMC33157/D 20-July-1999 MC33157 SO20N MTP6N50E MTP8N50E SO16N, SOIC Package free 1N4148 mtp6n50 passive resonant snubber MC33157DW MC33260
MC44603AP Abstract: motorola mosfet MTP6N60E 1N4007 1N4148 1N4934 1N5819 MC44603A MC44603ADW MR856 TL431 Text: Order this document by MC44603A/D MC44603A Enhanced Mixed Frequency Mode GreenLine PWM Controller: Fixed Frequency, Variable Frequency, Standby Mode The MC44603A is an enhanced high performance controller that is specifically designed for off–line and dc–to–dc converter applications. This	Original	PDF	MC44603A/D MC44603A MC44603A MC44603AP motorola mosfet MTP6N60E 1N4007 1N4148 1N4934 1N5819 MC44603ADW MR856 TL431

fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	PDF	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
transistor Electronic ballast "INDUCTION LAMP" Abstract: schematic diagram Electronic Ballast HID Motorola, AN1049 MC14046 AN1049 EB407 5000 watts PURE SINE WAVE inverter schematic diagram induction lamp electronic ballast for fluorescent lighting t8 motorola BR480/D Text: MOTOROLA Order this document by AN1543/D SEMICONDUCTOR APPLICATION NOTE AN1543 Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse ABSTRACT With a continuous growth rate of 20% per year, electronic	Original	PDF	AN1543/D AN1543 AN1543/D* transistor Electronic ballast "INDUCTION LAMP" schematic diagram Electronic Ballast HID Motorola, AN1049 MC14046 AN1049 EB407 5000 watts PURE SINE WAVE inverter schematic diagram induction lamp electronic ballast for fluorescent lighting t8 motorola BR480/D
Untitled Abstract: No abstract text available Text: Order this document by MC44603/D MC44603 Advance Information Mixed Frequency Mode GreenLine PWM Controller: Fixed Frequency, Variable Frequency, Standby Mode The MC44603 is an enhanced high performance controller that is specifically designed for off–line and dc–to–dc converter applications. This	Original	PDF	MC44603/D MC44603 MC44603 MC44603/D*
1N4007 diode PIV rating Abstract: NPC1200 AND8023 NCP1200 CROSS REFERENCE NPC-1200 NPC1200 equivalent footprint for transformer in orcad trouble shorting top switch 250 smps MBRA140LT3 EGSTON C 44 Text: AND8023/D Implementing the NCP1200 in Low-Cost AC/DC Converters Prepared by: Christophe Basso ON Semiconductor Avenue Eisenhower, BP1056, 31023 TOULOUSE Cedex France 33 0 5 61 19 90 12 e–mail: [email protected] The NCP1200 implements a standard current mode	Original	PDF	AND8023/D NCP1200 BP1056, NCP1200 r14525 1N4007 diode PIV rating NPC1200 AND8023 NCP1200 CROSS REFERENCE NPC-1200 NPC1200 equivalent footprint for transformer in orcad trouble shorting top switch 250 smps MBRA140LT3 EGSTON C 44
MTP6N60 Abstract: MTP6N6 Text: Æ 7 SGS-THOMSON MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE MTP6N60 V DSS R DS on *d 600 V 1.2 a 6A • HIGH VOLTAGE - 600 V FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING TIMES FOR OPERATIONS AT> 100KHz • EASY DRIVE FOR REDUCED COST AND SIZE	OCR Scan	PDF	MTP6N60 100KHz O-220 MTP6N60 MTP6N6
GSP 405 T 125 Abstract: AN569 MTP6N60E motorola mosfet MTP6N60E Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP6N60E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon G te TMOS POWER FET 6.0 AMPERES 600 VOLTS R D S o n = 1-2 OHMS This high voltage MOSFET uses an advanced termination	OCR Scan	PDF	MTP6N60E GSP 405 T 125 AN569 motorola mosfet MTP6N60E
TP6N60 Abstract: No abstract text available Text: MOTOROLA Order this document by MTP6N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP6N60E TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n	OCR Scan	PDF	MTP6N60E/D TP6N60E 21A-09 TP6N60
Untitled Abstract: No abstract text available Text: S G S - T H O M S O N ¿ 5 ¡U È T O « 7 M T P 6 N 60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V MTP6N60 • . ■ . . R DS on Id < 1 .2 a 6.8 A dss 600 V TYPICAL RDS(on) = 1 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C	OCR Scan	PDF	MTP6N60 gaTP6N60 ISOWATT22Q
MTP6N10 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTP6N10 Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS T M O S POWER FET 6 AMPERES This TM O S P ow er FET is desig n ed fo r high speed p o w e r s w itc h	OCR Scan	PDF	MTP6N10 MTP6N10
MTP6N60 Abstract: smps circuit diagram Text: Æ 7 SCS-THO M SO N Räö g»[llLli(g'ir^ R5tl(gi MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR P R E L IM IN A R Y D A TA TYPE MTP6N60 V Dss R DS(on 600 V 1 .2 ß 6 A • HIGH VOLTAGE - 600 V FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING TIMES FOR	OCR Scan	PDF	MTP6N60 100KHz O-220 N4723 MTP6N60 smps circuit diagram

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Motorola Semiconductor Products MTP6N60E

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MTP6N Datasheets (32)

MTP6N Datasheets Context Search

Untitled

Untitled

MTP6N6

motorola mosfet MTP6N60E

MTP6N55

MTP6N60

Untitled

MTP6N6

MTP6N6

MTP6N60E equivalent

MTP6N60

MC68B21CP

SO20N

MC44603AP

fqp60n06

transistor Electronic ballast "INDUCTION LAMP"

Untitled

1N4007 diode PIV rating

MTP6N60

GSP 405 T 125

TP6N60

Untitled

MTP6N10

MTP6N60