c387n
Abstract: mtp3403
Text: Spec. No. : C387N3 Issued Date : 2007.06.13 Revised Date : Page No. : 1/6 CYStech Electronics Corp. P-CHANNEL Enhancement Mode MOSFET MTP3403AN3 Features • VDS=-30V RDS ON =85mΩ@VGS=-4.5V, IDS=-2A RDS(ON)=120mΩ@VGS=-2.5V, IDS=-1A • Advanced trench process technology
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C387N3
MTP3403AN3
OT-23
OT-23
UL94V-0
c387n
mtp3403
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MTP3403N3
Abstract: MARKING 3403 SOT-23 3403 marking sot-23 DT100
Text: Spec. No. : C422N3 Issued Date : 2007.10.16 Revised Date : Page No. : 1/6 CYStech Electronics Corp. P-CHANNEL Enhancement Mode MOSFET MTP3403N3 Features • VDS=-30V RDS ON =75mΩ@VGS=-10V, IDS=-3A RDS(ON)=120mΩ@VGS=-4.5V, IDS=-2.6A • Advanced trench process technology
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Original
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C422N3
MTP3403N3
OT-23
OT-23
UL94V-0
MTP3403N3
MARKING 3403 SOT-23
3403 marking sot-23
DT100
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IT8502E
Abstract: ITE IT8502E ITE 8502E IT8502 LKN 304 PN alc269 SLG8SP510T P2003EVG 8502E ITE8502E
Text: Preface Notebook Computer M810L/M811L Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are
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M810L/M811L
M815L
TJG-533-S-
-3216QBC-
IT8502E
ITE IT8502E
ITE 8502E
IT8502
LKN 304 PN
alc269
SLG8SP510T
P2003EVG
8502E
ITE8502E
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PDF
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