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    MTD2955 Search Results

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    MTD2955 Price and Stock

    onsemi MTD2955VT4

    MOSFET P-CH 60V 12A DPAK
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    DigiKey MTD2955VT4 Reel 2,500
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    Bristol Electronics MTD2955VT4 2,142
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    MTD2955VT4 964
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    Quest Components MTD2955VT4 6,000
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    ComSIT USA MTD2955VT4 15,604
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    onsemi MTD2955ET4

    PFET DPAK 60V 0.20R TR
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    DigiKey MTD2955ET4
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    Bristol Electronics MTD2955ET4 1,420
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    Quest Components MTD2955ET4 1,076
    • 1 $1.4835
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    MTD2955ET4 280
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    MTD2955ET4 33
    • 1 $1.26
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    • 100 $0.756
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    ComSIT USA MTD2955ET4 4,134
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    Motorola Semiconductor Products MTD2955ET4

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    Bristol Electronics MTD2955ET4 6,888 5
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    Quest Components MTD2955ET4 2,600
    • 1 $1.26
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    • 1000 $0.525
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    MTD2955ET4 1,702
    • 1 $1.5
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    • 100 $0.45
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    MTD2955ET4 704
    • 1 $1.25
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    • 100 $0.625
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    Texas Instruments MTD2955ET4

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    Bristol Electronics MTD2955ET4 3,994
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    Motorola Semiconductor Products MTD2955T4

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    Bristol Electronics MTD2955T4 3,400
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    MTD2955 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTD2955 Motorola Switchmode Datasheet Scan PDF
    MTD2955 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    MTD2955 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTD2955 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MTD2955 Unknown FET Data Book Scan PDF
    MTD2955-1 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTD2955-1 Unknown FET Data Book Scan PDF
    MTD2955E On Semiconductor TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount Original PDF
    MTD2955E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTD2955E Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTD2955E-1 Motorola TMOS power FET. 60 V, 12 A, Rds(on) 0.3 Ohm. Scan PDF
    MTD2955E-1 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTD2955E/D On Semiconductor TMOS POWER FET 12 AMPERES 60 VOLTS Original PDF
    MTD2955E-D On Semiconductor TMOS E-FET Power Field Effect Transistor DPAK for Original PDF
    MTD2955ET4 On Semiconductor TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount Original PDF
    MTD2955ET4 On Semiconductor TMOS E-FET.E Power Field Effect Transistor DPAK for Surface Mount Original PDF
    MTD2955V Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    MTD2955V Motorola TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM Original PDF
    MTD2955V On Semiconductor Power MOSFET 12 A, 60 V Original PDF
    MTD2955V Toshiba Power MOSFETs Cross Reference Guide Original PDF

    MTD2955 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN569

    Abstract: MTD2955 MTD2955E SMD310 MTD2955 sot-223 MTD2955E-D
    Text: MOTOROLA Order this document by MTD2955E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD2955E Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate TMOS POWER FET


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    PDF MTD2955E/D MTD2955E MTD2955e/D* AN569 MTD2955 MTD2955E SMD310 MTD2955 sot-223 MTD2955E-D

    MTD2955V

    Abstract: transistor WT9 a9hv
    Text: MTD2955V* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    PDF MTD2955V* MTD2955V transistor WT9 a9hv

    T2-955V

    Abstract: 2955v T2955V MTD2955VT4 369D AN569 MTD2955V SMD310 369C
    Text: MTD2955V Power MOSFET 12 Amps, 60 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge


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    PDF MTD2955V MTD2955V/D T2-955V 2955v T2955V MTD2955VT4 369D AN569 MTD2955V SMD310 369C

    a9hv

    Abstract: No abstract text available
    Text: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    PDF MTD2955V a9hv

    t2955e

    Abstract: T2-955e t2955 AB Electronic
    Text: MTD2955E Preferred Device TMOS E−FETt Power Field Effect Transistor DPAK for Surface Mount P−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient


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    PDF MTD2955E MTD2955E/D t2955e T2-955e t2955 AB Electronic

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTD2955V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTD2955V Designer's TMOS Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.230 OHM P–Channel Enhancement–Mode Silicon Gate


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    PDF MTD2955V/D MTD2955V

    AN569

    Abstract: MTD2955 MTD2955E MTD2955ET4 SMD310 power MOSFET SC-59 80 Volts MARKING CODE diode sod123 t4
    Text: MTD2955E Preferred Device TMOS E−FET. Power Field Effect Transistor DPAK for Surface Mount P−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient


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    PDF MTD2955E MTD2955E/D AN569 MTD2955 MTD2955E MTD2955ET4 SMD310 power MOSFET SC-59 80 Volts MARKING CODE diode sod123 t4

    t2955e

    Abstract: T2-955e
    Text: MTD2955E Power Field Effect Transistor DPAK for Surface Mount P−Channel Enhancement−Mode Silicon Gate This advanced MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time.


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    PDF MTD2955E MTD2955E/D t2955e T2-955e

    MTD2955

    Abstract: CBVK741B019 F63TNR FDD6680 MTD2955V
    Text: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    PDF MTD2955V MTD2955 CBVK741B019 F63TNR FDD6680 MTD2955V

    TMOS E-FET

    Abstract: AN569 MTD2955V SMD310
    Text: MOTOROLA Order this document by MTD2955V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTD2955V Designer's TMOS Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.230 OHM P–Channel Enhancement–Mode Silicon Gate


    Original
    PDF MTD2955V/D MTD2955V TMOS E-FET AN569 MTD2955V SMD310

    Untitled

    Abstract: No abstract text available
    Text: MTD2955V Power MOSFET 12 A, 60 V P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge


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    PDF MTD2955V MTD2955V/D

    T2955V

    Abstract: T2-955V MTD2955VT4 MTD2955V AN569 MTD2955V1 2955v Power MOSFET 12 Amps, 60 Volts p-Channel
    Text: MTD2955V Power MOSFET 12 Amps, 60 Volts P–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge


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    PDF MTD2955V r14525 MTD2955V/D T2955V T2-955V MTD2955VT4 MTD2955V AN569 MTD2955V1 2955v Power MOSFET 12 Amps, 60 Volts p-Channel

    T2955V

    Abstract: T2-955V 2955V MTD2955VT4G MTD2955V MTD2955VT4 dpak-3 369D AN569 MTD2955VG
    Text: MTD2955V Power MOSFET 12 A, 60 V P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge


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    PDF MTD2955V MTD2955V/D T2955V T2-955V 2955V MTD2955VT4G MTD2955V MTD2955VT4 dpak-3 369D AN569 MTD2955VG

    Untitled

    Abstract: No abstract text available
    Text: MTD2955V* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original
    PDF MTD2955V MTD2955V*

    T2-955V

    Abstract: T2955V 2955V MTD2955VT4 MTD2955V-D
    Text: MTD2955V Power MOSFET 12 Amps, 60 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge


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    PDF MTD2955V MTD2955V/D T2-955V T2955V 2955V MTD2955VT4 MTD2955V-D

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


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    PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


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    PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


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    PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    2955V

    Abstract: TD2955V
    Text: MOTOROLA Order this document by MTD2955V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD2955V TMOS V™ Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.200 OHM P-Channel Enhancement-Mode Silicon vaaie


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    PDF MTD2955V/D 2955V TD2955V

    25CC

    Abstract: 369A-10 AN569 MTD2955E MTD2955E-1 ims 200 MTD2955E1
    Text: MOTOROLA SC XSTRS/R F b ftE b3b?254 D DCnfl53Q ôST • MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTD2955E Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r M o to ro la Preferred Device P-Channel Enhancem ent-M ode Silico n Gate D P A K for Surface M o u n t or


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    PDF G01flS30 25CC 369A-10 AN569 MTD2955E MTD2955E-1 ims 200 MTD2955E1

    MTD2955V

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTD2955V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TD 2955V TM O S V™ Pow er Field E ffe c t Transistor DPAK for S u rfa ce M ount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.230 OHM P-Channel Enhancement-Mode Silicon Gate


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    PDF MTD2955V/D MTD2955V

    MTD2955

    Abstract: 2955 mosfet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTD2955 Designer's Data Sheet P o w er Field E ffe c t T ran sisto r P-Channel Enhancem ent-M ode S ilicon G ate TM O S D PA K fo r Surface M o u n t or Insertion M ount TMOS POWER FET 12 AMPERES rDS{on = 0.3 OHM 60 VOLTS


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    PDF MTD2955 MTD2955 2955 mosfet

    2955V

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P ro d u c t Preview MTD2955V TMOS V Power Field Effect Transistor DPAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.200 OHM TM O S V NjJSpj TM O S V is a new te c h n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce a rea p rod u ct a bo u t o n e -h a lt th a t of sta n d a rd M O S FE Ts. This


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MT02955V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD2955V TMOS V™ Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.230 OHM P-Channel Enhancement-Mode Silicon Gate


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    PDF MT02955V/D MTD2955V 69A-13