mt5*32
Abstract: micron sram MS-026
Text: 1Mb: 64K x 18, 32K x 32/36 3.3V I/O, FLOW-THROUGH SYNCBURST SRAM MT58LC64K18B4, MT58LC32K32B4, MT58LC32K36B4 1Mb SYNCBURST SRAM 3.3V VDD, 3.3V I/O, Flow-Through FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD
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MT58LC64K18B4,
MT58LC32K32B4,
MT58LC32K36B4
MT58LC64K18B4
mt5*32
micron sram
MS-026
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Untitled
Abstract: No abstract text available
Text: ADVANCE M in P H M I 64K x 18, 32K x 32/36 3.3V I/O, FLOW-THROUGH SYNCBURST SRAM Q X /M f^ D I I D O T O I IN v D U n O I MT58LC64K18B4, MT58LC32K32B4, MT58LC32K36B4 C D A M O ilM lv l 3.3V Supply, Flow-Through and Burst Counter FEATURES • • • • •
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MT58LC64K18B4,
MT58LC32K32B4,
MT58LC32K36B4
100-PIN
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Untitled
Abstract: No abstract text available
Text: M I^ E a r n iM I 1 Mb: 64K x 18, 32K x 32/36 3.3V I/O, FLOW-THROUGH SYNCBURST SRAM 1Mb SYNCBURST SRAM MT58LC32K32B4, 3.3V V dd, 3.3V I/O, Flow-Through FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply Vdd • Separate +3.3V +0.3V/-0.165V isolated output buffer
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MT58LC32K32B4,
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Untitled
Abstract: No abstract text available
Text: m i ^ d o n 1 * I 1 M b M b : 6 4 K x 1 8 > 3 2 K x 3 2 / 3 6 3.3V I/O, FLOW-THROUGH SYNCBURST SRAM S Y N C B U R S T “ m t 5s l c 32K36B4 M T58LC 32K 32B 4' 3.3V Vdd, 3.3V I/O, Flow-Through S R A M FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply Vdd
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32K36B4
T58LC
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MT58LC32K32B4
Abstract: marking abw
Text: M I^ E a n N * I 1 Mb: 64K X 18, 32K x 32/36 3.3V I/O, FLOW-THROUGH SYNCBURST SRAM 1M b SYNCBURST SRAM S c ™ ' MT58L032K32B4' 3.3V Vdd, 3.3V I/O, Flow-Through FEATURES • • • • • • • • • • • • • • • Fast access tim es: 6.8ns, 7.5ns, 8.5ns, 9ns a n d 10ns
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OCR Scan
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MT58LC64K18B4
p65-Rev.
MT58LC32K32B4
marking abw
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