MT28F800B1T Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
MT28F800B1T Abstract: No abstract text available Text: PRELIMINARY 512K x 16, 1 MEG x 8 BOOT BLOCK FLASH MEMORY MT28F800B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View 44-Pin SOP (FA-1) • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks	Original	PDF	MT28F800B1 44-Pin 16KB/8K-word 100ns, 110ns MT28F800B1T
Untitled Abstract: No abstract text available Text: OBSOLETE PRELIMINARY 512K x 16, 1 MEG x 8 BOOT BLOCK FLASH MEMORY MT28F800B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View 44-Pin SOP (B-1) • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks	Original	PDF	MT28F800B1 44-Pin 16KB/8K-word 110ns
Untitled Abstract: No abstract text available Text: PRELIMINARY 512K x 16, 1 MEG x 8 BOOT BLOCK FLASH MEMORY M IC R O N FLASH MEMORY MT28F800B1 martV o ltag e FEATURES • Eleven erase blocks: 16KB/8K-word boot block (protected Two 8KB/4K-word parameter blocks Eight main memory blocks • SmartVoltage Technology (SVT):	OCR Scan	PDF	MT28F800B1 16KB/8K-word 100ns 110ns, 150ns 48-PIN 0020bfl2 80-PIN
marking code 2t7 Abstract: No abstract text available Text: ADVANCE MT28F800B1 512K x 16,1 MEG x 8 FLASH MEMORY MICRON I QUANTUM DEVICES, MC. FLASH MEMORY 512K x 16,1 MEG x 8 S mart FEATURES oltage 44 3 R P* A ïs C 2 43 3 W E * At 7 C 3 42 □ AS A7 C 4 41 ] A9 A6 C S 40 ] A10 AS C 6 39 3 A 11 A4 C 7 38 3 A 12 A3 C 8	OCR Scan	PDF	MT28F800B1 48-Pin MT2BF800B1 marking code 2t7
SOT-23 ASE Abstract: No abstract text available Text: ADVANCE MT28F800B1 512K x 16. 1 MEG x 8 FLASH M EM ORY I^ IIC R O N FLASH MEMORY 512K x 1 6 ,1 MEG x 8 BOOT BLOCK FEATURES • Eleven erase blocks: 16K B/8K -w ord boot block protected Tw o 8K B/4K -w ord param eter blocks Eight main m emory blocks • Deep Power-Down Mode: 8\|iA at 5V V cc; 8(lA at	OCR Scan	PDF	MT28F800B1 100ns 110ns, 150ns 16-bit SOT-23 ASE
Untitled Abstract: No abstract text available Text: PRELIM INARY p i l C R Q ’ i! r\ v. '’ t- f M !. I i ü ü ? \ FLASH MEMORY h L. A b i ' 1 ’ IYIBG x rf i„IE i\,1 0 h V MT28F800B1 FEATURES • Eleven erase blocks: 16KB/8K-word boot block protected Two 8KB/4K-word parameter blocks Eight main memory blocks	OCR Scan	PDF	16KB/8K-word 100ns 110ns, 150ns MT28F800B1 16-bit GT997,
Untitled Abstract: No abstract text available Text: PRELIMINARY MICRON I 512Kx 16,1 MEG x 8 BOOT BLOCK FLASH MEMORY QUANTUM DEVICES, INC. FLASH MEMORY MT28F8o°B1 S m artV FEATURES PIN ASSIGNMENT Top View 44-Pin SOP (FA-1) • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word param eter blocks	OCR Scan	PDF	512Kx 16KB/8K-word 110ns MT28F8o 44-Pin
Micron Quantum Devices Abstract: No abstract text available Text: ADVANCE MT28F800B1 512K x 16,1 MEG x 8 FLASH MEMORY M IC R O N I QkMMVUMMHBMlM G> FLASH MEMORY 512K x 16, 1 MEG x 8 S mart V oltage , FEATURES PIN ASSIGNMENT Top View 44-Pin SOP (FA-1) • Eleven erase blocks: 16K B /8K -w ord b o o t block (protected) T w o 8K B /4K -w ord p ara m e te r blocks	OCR Scan	PDF	MT28F800B1 100ns 110ns, 150ns 576x8 48-PIN MT2SF80081 Micron Quantum Devices