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TE Connectivity A6MMT-2018M ADM20T/AE20M/ADM20T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	A6MMT-2018M	Bulk			1	1 $8.12 10 $6.611 100 $8.12 1000 $3.3749 10000 $3.08496	Buy Now
TE Connectivity A8MMT-2018G ADM20T/AE20G/ADM20T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	A8MMT-2018G	Bulk			1	1 $6.54 10 $5.329 100 $6.54 1000 $2.72068 10000 $2.48694	Buy Now
TE Connectivity A6MMT-2018G ADM20T/AE20G/ADM20T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	A6MMT-2018G	Bulk			1	1 $6.54 10 $5.329 100 $6.54 1000 $2.72068 10000 $2.48694	Buy Now
TE Connectivity A8MMT-2018M ADM20T/AE20M/ADM20T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	A8MMT-2018M	Bulk			1	1 $8.12 10 $6.611 100 $8.12 1000 $3.3749 10000 $3.08496	Buy Now

MT2018 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MT201833		Endicott Research Group	10 Tube DC to AC Inverter		Original	PDF

MT2018 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
pwm Generator Abstract: MT201833 MT2018 555 pwm dc pwm generator duty cycle Text: MT201833 Endicott Research Group, Inc. MT201833 2601 Wayne St., Endicott NY 13760 607-754-9187 Fax 607-754-9255 Specifications and Applications Information FIGURE 10 - TYPICAL CONNECTION UTILIZING INTERNAL PWM GENERATOR 6/20/96 10 Tube DC to AC Inverter Preliminary	Original	PDF	MT201833 BL-C053A MT201833 12Vdc 180Hz) pwm Generator MT2018 555 pwm dc pwm generator duty cycle
samsung r580 Abstract: BA41-01174A marvell 88E8059 88E8059 SMSC mec1308 TPS51125 mec1308 tps51125 SCHEMATIC smd diode code MK a8 c917 Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL	Original	PDF	BA41-01174A 100nF MIC502 B4013AM423-32 MIC500 SOM4013SL-G443-C1033 samsung r580 marvell 88E8059 88E8059 SMSC mec1308 TPS51125 mec1308 tps51125 SCHEMATIC smd diode code MK a8 c917
ASM1442 Abstract: bd82hm55 SMSC mec1308 mec1308 Intel hm55 JLCD500 HM55 CRB smsc mec1308-nu LTST-C193TBKT-AC N11X-GE1 Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL	Original	PDF	BREMEN-15C/17C BREMEN-15C/17C BA41-xxxxxA 100nF C1114 ASM1442 bd82hm55 SMSC mec1308 mec1308 Intel hm55 JLCD500 HM55 CRB smsc mec1308-nu LTST-C193TBKT-AC N11X-GE1
Untitled Abstract: No abstract text available Text: fUIICRON DRAM _ . . - . _ _ Ä 1 MEG X 8 1 MEG x 8 FAST-PAGE-MODE _ MT2D18 DRAM MODULE d ra m MT2D18 LOW POWER, FY T F M n P n RF EXTENDED REFRESH (MT2D18 L) M O D U LE • ■ I V / 1 ^ W ^ I— FEATURES • Industry-standard pinout in a 30-pin, single-in-line	OCR Scan	PDF	MT2D18 MT2D18) MT2D18 30-pin, 450mW 024-cycle 128ms
FPM DRAM 30-pin SIMM Abstract: T2D18 Text: I^ IIC n D N lEG DRAM MODULE X 8 MT2D18 DRAM MODULE 1 MEG x 8 1 MEGABYTE, 5V, FAST PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 30-pin, single-in-line m emory m odule SIMM • High-perform ance CM OS silicon-gate process • Single 5V ±10% power supply	OCR Scan	PDF	MT2D18 30-pin, 024-cycle 30-Pin FPM DRAM 30-pin SIMM T2D18
T2D18 Abstract: No abstract text available Text: I^ IIC R O IS I 1 MEG 1 MEG DRAM MODULE X X MT2D18 8 DRAM M ODULE 8 DRAM FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-perform ance CM OS silicon-gate process • Single 5V +10% power supply • Low power, 6mW standby; 450mW active, typical	OCR Scan	PDF	MT2D18 30-pin, 450mW 024-cycle 30-Pin MT2018 T2D18
Untitled Abstract: No abstract text available Text: MT2D18 1 MEG X 8 DRAM MODULE M IC R O N 1 MEG DRAM MODULE X8 DRAM FAST PAGE MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES • Industry standard pinout in a 30-pin, single-in-line memory module • High-performance, CMOS silicon-gate process	OCR Scan	PDF	MT2D18 MT2D18) MT2D18 30-pin, 450mW 024-cycle 128ms 400jiA I25ps
DM-01 Abstract: Techno RC Text: MT2D18 1 MEG x 8 DRAM MODULE I^ IC R O N REFRESH _ Returning RAS and CAS HIGH terminates a m emory cycle and decreases chip current to a reduced standby level. A lso, the chip is preconditioned for the next cycle during the RAS HIGH time. M emory cell data is retained in its	OCR Scan	PDF	MT2D18 T4C4001JDJ MT2Q18 DM-01 Techno RC
MT4C4001 Abstract: CC3220 Text: I^ IIC Z R O N 1 MEG 1 MEG DRAM MODULE X X 8 MT2D18 DRAM MODULE 8 DRAM FAST-PAGE-MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-performance CMOS silicon-gate process	OCR Scan	PDF	MT2D18 30-pin, 450mW 024-cycle 128ms MT2D18) 30-Pin MT4C4001 CC3220
Untitled Abstract: No abstract text available Text: NICRON SEMICONDUCTOR INC b3E » MICRON □ R A M 1 M E G _ U U blllSMT 0007*110 OflT « U R N 1 MEG x 8 X 8 MT2D18 DRAM MODULE D R A M FAST-PAGE-MODE (MT2D18 l o w p o w e r, F EXTENDED X T F M D F D RE REFRESH (MT2D18 L) MODULE IV I V / U • U FEATURES	OCR Scan	PDF	MT2D18 MT2D18) MT2D18 30-pin, 450mW 024-cycle