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    SOJ42-P-400-1

    Abstract: msm51v18160b
    Text: ¡ Semiconductor MSM51V18160B/BSL ¡ Semiconductor MSM51V18160B/BSL E2G0083-17-41 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160B/BSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V18160B/BSL achieves high integration, high-speed operation, and


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    PDF MSM51V18160B/BSL E2G0083-17-41 576-Word 16-Bit MSM51V18160B/BSL SOJ42-P-400-1 msm51v18160b

    DRAMs

    Abstract: MSM5416258A MSM5432126 MSM54V32126 oki Package SOJ msm51v17405b MSM54 TSOP300 msm514260c
    Text: OKI Semiconductor DRAMs 1-Meg DRAMs 5 V Part Number Description Organization Pins / Package Access Time Max (ns) MSM511664B-xx Fast page 64K x 16 40 / DIP 70, 80 MSM514256C-xx Fast page 256K x 4 60, 70, 80 MSM514256CL-xx Fast page, low-power 20 / DIP, ZIP


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    PDF MSM511664B-xx MSM514256C-xx MSM514256CL-xx MSM511000C-xx MSM51100CL-xx MSM54V32126 MSM5432126 16-Meg MSM5116160A-xx MSM5116165A-xx DRAMs MSM5416258A MSM5432126 MSM54V32126 oki Package SOJ msm51v17405b MSM54 TSOP300 msm514260c

    bsl 100

    Abstract: SOJ42
    Text: お客様各位 資料中の「沖電気」「OKI」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


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    PDF J2G0083-17-41 MSM51V18160B/BSL MSM51V18160B/BSL 576-Word 16-Bit MSM51V18160B/BSLCMOS1 42CMOS 42SOJ50/44TSOP 02416ms1 024128msSL bsl 100 SOJ42

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V18160B/BSL 1,048,576-Word x 16-Bit DYNAMIC RAM ; FAST PAGE MODE TYPE DESCRIPTION TheMSM51 V18160B/BSL is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki'ssilicon-gate CMOS technology. MSM51V18160B/BSLachieves high integration, high-speed operation,and


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    PDF MSM51V18160B/BSL 576-Word 16-Bit TheMSM51 V18160B/BSL TheMSM51V18160B/BSLachieves MSM51V18160B/BSL 42-pin

    msm514260c

    Abstract: MSM514256C edo 16m x 32
    Text: E2G0004-17-42 Product Overview O K I Semiconductor Product Overview DRAM H H 5V 1M xT~1— I MSM5110OOC/CL H 256K X 4 1— I MSM514256C/CL j 128K X 8 h i MSM518126/L MSM518128/L I 64K X 16 M MSM511664C/CL MSM511666C/CL 2M~~hj 2M X 1 I— I M 3M 512100/T 1M X 2 I— ì MSM512200/L~


    OCR Scan
    PDF E2G0004-17-42 MSM5110OOC/CL MSM514256C/CL MSM518126/L MSM518128/L MSM511664C/CL MSM511666C/CL 512100/T MSM512200/L~ MSM512800C msm514260c MSM514256C edo 16m x 32

    SQJ28-P-400-127

    Abstract: No abstract text available
    Text: E2G0006-17-41 O K I Semiconductor _ Packaging Packaging 5 V Power Supply DRAM Products MSM514256C/CL MSM518126/L MSM518128/L MSM511664C/CL MSM511666C/CL MSM512100/L MSM512200/L MSM512800C MSM512805C MSM514100D/DL MSM514400D/DL MSM514800C/CSL MSM514900C/CSL


    OCR Scan
    PDF E2G0006-17-41 MSM511000C/CL MSM514256C/CL MSM518126/L MSM518128/L MSM511664C/CL MSM511666C/CL MSM512100/L MSM512200/L MSM512800C SQJ28-P-400-127