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    MR16R1624 Search Results

    MR16R1624 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MR16R16248EG0 Samsung Electronics Original PDF
    MR16R1624AF0 Samsung Electronics (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die Original PDF
    MR16R1624AF0-CG6 Samsung Electronics RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V Original PDF
    MR16R1624AF0-CK8 Samsung Electronics RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V Original PDF
    MR16R1624AF0-CK8 Samsung Electronics DRAM MODULE RDRAM 128MBYTE 2.5V 184RIMM Original PDF
    MR16R1624AF0-CM8 Samsung Electronics DRAM MODULE RDRAM 128MBYTE 2.5V 184RIMM Original PDF
    MR16R1624AF0-CM9 Samsung Electronics RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V Original PDF
    MR16R1624AF1-CN9 Samsung Electronics RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V Original PDF
    MR16R1624DF0 Samsung Electronics (MR1xR1622(4/8/G)DF0) Key Timing Parameters Original PDF
    MR16R1624DF0-CK8 Samsung Electronics (16M x 16) * 4 pcs RIMM Module Based on 256 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V Original PDF
    MR16R1624DF0-CM8 Samsung Electronics (16M x 16) * 4 pcs RIMM Module Based on 256 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V Original PDF
    MR16R1624DF0-CM9 Samsung Electronics (16M x 16) * 4 pcs RIMM Module Based on 256 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V Original PDF
    MR16R1624DF0-CN9 Samsung Electronics DRAM MODULE RDRAM 1GBYTE 2.5V 184RIMM Original PDF
    MR16R1624DF0-CT9 Samsung Electronics (16M x 16) * 4 pcs RIMM Module Based on 256 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V Original PDF
    MR16R1624EG0-CK8 Samsung Electronics Original PDF
    MR16R1624EG0-CK8 Samsung Electronics (16M x 16) * 4 pcs RIMM Module Based on 256 MBit E-die, 32s Banks, 16k/32 ms Ref, 2.5 V Original PDF
    MR16R1624EG0-CM8 Samsung Electronics Original PDF
    MR16R1624EG0-CM8 Samsung Electronics (16M x 16) * 4 pcs RIMM Module Based on 256 MBit E-die, 32s Banks, 16k/32 ms Ref, 2.5 V Original PDF
    MR16R1624EG0-CT9 Samsung Electronics Original PDF
    MR16R1624EG0-CT9 Samsung Electronics (16M x 16) * 4 pcs RIMM Module Based on 256 MBit E-die, 32s Banks, 16k/32 ms Ref, 2.5 V Original PDF

    MR16R1624 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DRAM material declaration

    Abstract: No abstract text available
    Text: MR16R1624 8/G EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004


    Original     		PDF MR16R1624 MR18R1624 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) 288Mb DRAM material declaration

    SAMSUNG MR18R162GMN0

    Abstract: A76 MARKING CODE MR18R162GMN0-CK8
    Text: MR16R1624 6/8/C/G MN0 MR18R1624(6/8/C/G)MN0 Change History Version 0.9 (January 2000) - Preliminary * First copy. * Based on the 1.02ver 128/144Mbit RDRAMs base RIMM Datasheet Version 1.0 (October 2000) - Preliminary * Based on the 1.0ver Rambus 256/288Mb RDRAMs base RIMM datasheet


    Original     		PDF MR16R1624 MR18R1624 02ver 128/144Mbit 256/288Mb 100ps 250ps 200ps -711MHz/-600MHz) SAMSUNG MR18R162GMN0 A76 MARKING CODE MR18R162GMN0-CK8

    b58 468

    Abstract: B58 608
    Text: MR16R1624 8/G EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004


    Original     		PDF MR16R1624 MR18R1624 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) 288Mb b58 468 B58 608

    B58 608

    Abstract: marking code B38
    Text: MR16R1624 8/G EG0 MR18R1624(8/G)EG0 Preliminary Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Page 0 Version 0.1 Dec. 2003 MR16R1624(8/G)EG0 MR18R1624(8/G)EG0


    Original     		PDF MR16R1624 MR18R1624 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) 288Mb B58 608 marking code B38

    marking a86

    Abstract: transistor MN1 DATA SHEET transistor MN1
    Text: MR16R1624 6/8 MN1 MR18R1624(6/8)MN1 Change History Version 1.1 (March 2000) * First copy. * Based on the 1.02ver 128/144Mbit RDRAMs base RIMM Datasheet -Only 4/6/8d RIMM are using 6layer PCB. Page 0 Version 1.1 Mar. 2001 MR16R1624(6/8)MN1 MR18R1624(6/8)MN1


    Original     		PDF MR16R1624 MR18R1624 02ver 128/144Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) marking a86 transistor MN1 DATA SHEET transistor MN1

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    MR16R1624AF0-CM8

    Abstract: PC800 K4R571669A-FCK8 K4R571669A-FCM8 K4R881869A-FCK8 K4R881869A-FCM8 MR16R1622AF0-CM8 MR16R1628AF0-CM8 MR16R162GAF0-CK8 MR16R1628AF0-CK8
    Text: B • d - r - d" Technical Notification ♦ RDRAM Product planning Team a .m.2002 K4R571669A-FCM8/ K4R881869A-FCM8 vs. K4R571669A-FCK8/ K4R881869A-FCK8 The only differnce between xxx-FCK8 and xxx-FCM8 is tRCD parameter value. xxx-FCM8's tRCD is 7 clks while xxx-FCK8's tRCD is 9 clks.


    OCR Scan     		PDF K4R571669A-FCM8/ K4R881869A-FCM8 K4R571669A-FCK8/ K4R881869A-FCK8 256Mb/288Mb PC800-40ns PC800-45ns K4R571669A-FCM8 MR16R1624AF0-CM8 PC800 K4R571669A-FCK8 MR16R1622AF0-CM8 MR16R1628AF0-CM8 MR16R162GAF0-CK8 MR16R1628AF0-CK8