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    MOSFET SWITCH ULTRA FAST Search Results

    MOSFET SWITCH ULTRA FAST Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET SWITCH ULTRA FAST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TDFN22-8

    Abstract: No abstract text available
    Text: DATA SHEET AAT4616 Ultra High Precision Adjustable Current Limited Load Switch with Fault Flag General Description Features The AAT4616 SmartSwitch is a current limited P-channel MOSFET power switch designed for high side load switching applications. This switch operates with inputs ranging


    Original     		PDF AAT4616 AAT4616 01940A TDFN22-8

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET AAT4616 Ultra High Precision Adjustable Current Limited Load Switch with Fault Flag General Description Features The AAT4616 SmartSwitch is a current limited P-channel MOSFET power switch designed for high side load switching applications. This switch operates with inputs ranging


    Original     		PDF AAT4616 AAT4616 300ide 01940A

    TDFN22-8

    Abstract: No abstract text available
    Text: DATA SHEET AAT4616 Ultra High Precision Adjustable Current Limited Load Switch with Fault Flag General Description Features The AAT4616 SmartSwitch is a current limited P-channel MOSFET power switch designed for high side load switching applications. This switch operates with inputs ranging


    Original     		PDF AAT4616 AAT4616 201940B TDFN22-8

    TDFN22-8

    Abstract: AAT4616
    Text: DATA SHEET AAT4616 Ultra High Precision Adjustable Current Limited Load Switch with Fault Flag General Description Features The AAT4616 SmartSwitch is a current limited P-channel MOSFET power switch designed for high side load switching applications. This switch operates with inputs ranging


    Original     		PDF AAT4616 AAT4616 201940C TDFN22-8

    Untitled

    Abstract: No abstract text available
    Text: 10-FZ06NBA110FP-M306L28 target datasheet flowBoost0 600V/110A PS* Features flow0 12mm housing ● *PS: 2x 110A parallel switch 100A IGBT and 99mΩ MOSFET ● high speed IGBT with C6 MOSFET and SiC buck diodes ● high efficiency dual booster ● ultra fast switching frequency


    Original     		PDF 10-FZ06NBA110FP-M306L28 00V/110A

    FDFMA2P853

    Abstract: 1A86
    Text: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET


    Original     		PDF FDFMA2P853 FDFMA2P853 1A86

    FDFMA2P853

    Abstract: No abstract text available
    Text: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET


    Original     		PDF FDFMA2P853 FDFMA2P853

    Untitled

    Abstract: No abstract text available
    Text: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET


    Original     		PDF FDFMA2P853 FDFMA2P853

    FDFMA2P853

    Abstract: No abstract text available
    Text: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET


    Original     		PDF FDFMA2P853 FDFMA2P853

    diode ja

    Abstract: No abstract text available
    Text: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET


    Original     		PDF FDFMA2P853 diode ja

    FDFMA2P853

    Abstract: No abstract text available
    Text: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET


    Original     		PDF FDFMA2P853 FDFMA2P853

    Untitled

    Abstract: No abstract text available
    Text: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET


    Original     		PDF FDFMA2P853 FDFMA2P853

    FDFMA2P853

    Abstract: No abstract text available
    Text: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET


    Original     		PDF FDFMA2P853 FDFMA2P853

    FDFMA2P853

    Abstract: No abstract text available
    Text: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET


    Original     		PDF FDFMA2P853 FDFMA2P853

    Untitled

    Abstract: No abstract text available
    Text: Integrated P-Channel PowerTrench MOSFET and Schottky Diode –20 V, –3.0 A, 120 m: Features General Description MOSFET: This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low


    Original     		PDF

    FDFMA2P859T

    Abstract: No abstract text available
    Text: Integrated P-Channel PowerTrench MOSFET and Schottky Diode –20 V, –3.0 A, 120 m: Features General Description MOSFET: This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS22912 www.ti.com SLVSB78 – APRIL 2012 Ultra-Small, Low on Resistance Load Switch with Controlled Turn-on Check for Samples: TPS22912 FEATURES DESCRIPTION • • The TPS22912 is a small, low rON load switch with controlled turn-on and contains a P-channel MOSFET


    Original     		PDF TPS22912 SLVSB78 TPS22912

    Untitled

    Abstract: No abstract text available
    Text: TPS22912 www.ti.com SLVSB78 – APRIL 2012 Ultra-Small, Low on Resistance Load Switch with Controlled Turn-on Check for Samples: TPS22912 FEATURES DESCRIPTION • • The TPS22912 is a small, low rON load switch with controlled turn-on and contains a P-channel MOSFET


    Original     		PDF TPS22912 SLVSB78 TPS22912

    Untitled

    Abstract: No abstract text available
    Text: TPS22912 www.ti.com SLVSB78 – APRIL 2012 Ultra-Small, Low on Resistance Load Switch with Controlled Turn-on Check for Samples: TPS22912 FEATURES DESCRIPTION • • The TPS22912 is a small, low rON load switch with controlled turn-on and contains a P-channel MOSFET


    Original     		PDF TPS22912 SLVSB78 TPS22912

    Untitled

    Abstract: No abstract text available
    Text: TPS22912 www.ti.com SLVSB78 – APRIL 2012 Ultra-Small, Low on Resistance Load Switch with Controlled Turn-on Check for Samples: TPS22912 FEATURES DESCRIPTION • • The TPS22912 is a small, low rON load switch with controlled turn-on and contains a P-channel MOSFET


    Original     		PDF TPS22912 SLVSB78 TPS22912

    Untitled

    Abstract: No abstract text available
    Text: TPS22912 www.ti.com SLVSB78 – APRIL 2012 Ultra-Small, Low on Resistance Load Switch with Controlled Turn-on Check for Samples: TPS22912 FEATURES DESCRIPTION • • The TPS22912 is a small, low rON load switch with controlled turn-on and contains a P-channel MOSFET


    Original     		PDF TPS22912 SLVSB78 TPS22912

    Untitled

    Abstract: No abstract text available
    Text: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra


    Original     		PDF APT56M50B2 APT56M50L O-264 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra


    Original     		PDF APT56M50B2 APT56M50L O-264 APT56M50B2 O-247

    404PI

    Abstract: 409PI IXDD408SI 402PI 404SI 414PI 402SI RF MOSFET Driver "IGBT Drivers" IXDN
    Text: Integrated Circuits Ultra-fast Power MOSFET / IGBT Drivers These ultra-fast high current drivers are optimized for high efficiency performance in the motor drive and power conversion applications. They are designed to switch largest MOSFETs and IGBTs with minimum switching times at frequencies to 10 MHz.


    OCR Scan     		PDF O-263 O-220 414PI 414YI 414YM 414CI 414CM 414PI 414YI 414YM 404PI 409PI IXDD408SI 402PI 404SI 402SI RF MOSFET Driver "IGBT Drivers" IXDN