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    APT56M50L Price and Stock

    Microchip Technology Inc APT56M50L

    MOSFET N-CH 500V 56A TO264
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    DigiKey APT56M50L Tube 217 1
    • 1 $11.59
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    • 100 $9.425
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    Avnet Americas APT56M50L Tube 26 Weeks 50
    • 1 $11.3582
    • 10 $11.3582
    • 100 $9.18938
    • 1000 $9.53706
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    Mouser Electronics APT56M50L 40
    • 1 $11.59
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    • 1000 $10.02
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    Newark APT56M50L Bulk 50
    • 1 $11.59
    • 10 $11.59
    • 100 $10.02
    • 1000 $9.41
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    Future Electronics APT56M50L Tube 26 Weeks 125
    • 1 -
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    • 100 $9.98
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    Microchip Technology Inc APT56M50L Tube 26 Weeks
    • 1 $11.59
    • 10 $11.59
    • 100 $10.02
    • 1000 $9.2
    • 10000 $8.88
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    Onlinecomponents.com APT56M50L
    • 1 -
    • 10 $11.25
    • 100 $9.54
    • 1000 $9.03
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    TME APT56M50L 1
    • 1 $16.88
    • 10 $13.36
    • 100 $13.36
    • 1000 $13.36
    • 10000 $13.36
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    NAC APT56M50L Tube 33
    • 1 $11.09
    • 10 $11.09
    • 100 $10.05
    • 1000 $9.2
    • 10000 $9.2
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    Richardson RFPD APT56M50L 50
    • 1 -
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    • 100 $9.96
    • 1000 $9.96
    • 10000 $9.96
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    Master Electronics APT56M50L
    • 1 -
    • 10 $11.25
    • 100 $9.54
    • 1000 $9.03
    • 10000 $9.03
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    APT56M50L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT56M50L Microsemi Power MOS 8 Original PDF

    APT56M50L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT56M50B2

    Abstract: APT56M50L MIC4452
    Text: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT56M50B2 APT56M50L O-264 O-247 APT56M50B2 APT56M50L MIC4452

    APT56M50L

    Abstract: APT56M50B2 MIC4452 0508073
    Text: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT56M50B2 APT56M50L O-264 O-247 APT56M50L APT56M50B2 MIC4452 0508073

    Untitled

    Abstract: No abstract text available
    Text: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra


    Original
    PDF APT56M50B2 APT56M50L O-264 O-247

    APT56M50B2

    Abstract: APT56M50L MIC4452
    Text: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT56M50B2 APT56M50L O-264 O-247 APT56M50B2 APT56M50L MIC4452

    APT56M50B2

    Abstract: APT56M50L MIC4452 a1175
    Text: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT56M50B2 APT56M50L O-264 O-247 APT56M50B2 APT56M50L MIC4452 a1175

    Untitled

    Abstract: No abstract text available
    Text: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra


    Original
    PDF APT56M50B2 APT56M50L O-264 APT56M50B2 O-247

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    fast diode SOT-227

    Abstract: N-channel MOSFET to-247 FREDFETs TO-264 TO247 APT17F120J TO-247 APT44F80L to264
    Text: TM Power MOS 8 is a new family of high speed, high voltage N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These new MOSFETs /FREDFETs have been optimized for both hard and soft switching in high frequency, high voltage applications rated above


    Original
    PDF APT84M50L APT58M50J APT100M50J APT34F60B O-247 O-264 OT-227 fast diode SOT-227 N-channel MOSFET to-247 FREDFETs TO-264 TO247 APT17F120J TO-247 APT44F80L to264