43N60
Abstract: 40N60 max4340 MOSFET 40A 600V
Text: ADVANCE INFORMATION HiPerFETTM Power MOSFET IXFN 43N60 IXFN 40N60 IXFK 43N60 IXFK 40N60 Single MOSFET Die VDSS I D25 RDS on trr 600V 600V 600V 600V 43A 40A 43A 40A 0.13W 0.15W 0.13W 0.15W 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings
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200ns
200ns
43N60
40N60
40N60
O-264
max4340
MOSFET 40A 600V
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43N60
Abstract: 40n60 IXFN40N60 IXFK40N60 IXFK43N60 IXFN43N60
Text: ADVANCE INFORMATION HiPerFETTM Power MOSFET IXFN 43N60 IXFN 40N60 IXFK 43N60 IXFK 40N60 Single MOSFET Die VDSS I D25 RDS on trr 600V 600V 600V 600V 43A 40A 43A 40A 0.13W 0.15W 0.13W 0.15W 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings
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43N60
40N60
200ns
O-264
43N60
40n60
IXFN40N60
IXFK40N60
IXFK43N60
IXFN43N60
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w20nm
Abstract: w20nm60 p20nm60fp P20NM60FP equivalent
Text: STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω
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STB20NM60-1
STP20NM60FP
STB20NM60
STP20NM60
STW20NM60
O-247
O-220/FP
STP20NM60
STB20NM60
w20nm
w20nm60
p20nm60fp
P20NM60FP equivalent
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Mosfet
Abstract: SSF2N60F mosfet 600V 100A
Text: SSF2N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.6ohm(typ.) ID 2A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and
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SSF2N60F
O220F
p600V
Mosfet
SSF2N60F
mosfet 600V 100A
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Mosfet
Abstract: SSF2N60D1
Text: SSF2N60D1 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.9Ω (typ.) ID 2A TO-252 Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and
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SSF2N60D1
O-252
O-252ï
Mosfet
SSF2N60D1
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W20NM60
Abstract: P20nm60 p20nm60fp w20nm60 equivalent P20NM60FP equivalent mosfet w20nm60 B20NM60-1 STP20NM60FP
Text: STB20NM60/-1 - STP20NM60FP STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A
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STB20NM60/-1
STP20NM60FP
STP20NM60
STW20NM60
O-247
O-220/FP
STB20NM60
STB20NM60-1
W20NM60
P20nm60
p20nm60fp
w20nm60 equivalent
P20NM60FP equivalent
mosfet w20nm60
B20NM60-1
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w20nm60
Abstract: w20nm60 equivalent p20nm60 p20nm60fp w20nm P20NM60FP equivalent STB20NM60-1 B20NM60-1 STP20NM60 Contents STW20NM60
Text: STB20NM60/-1 - STP20NM60FP STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A
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STB20NM60/-1
STP20NM60FP
STP20NM60
STW20NM60
O-247
O-220/FP
STP20NM60
STB20NM60
STB20NM60-1
w20nm60
w20nm60 equivalent
p20nm60
p20nm60fp
w20nm
P20NM60FP equivalent
STB20NM60-1
B20NM60-1
STP20NM60 Contents
STW20NM60
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Mosfet
Abstract: SSF10N60F
Text: SSF10N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.8ohm(typ.) ID 10A TO220F Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced trench MOSFET process technology Special designed for PWM, load switching and
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SSF10N60F
O220F
dev60F
Mosfet
SSF10N60F
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w20nm60
Abstract: w20nm60 equivalent p20nm60 P20NM60FP B20NM60 V2.1 STB20NM60 STB20NM60-1 P20NM60FP equivalent STP20NM60
Text: STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A
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STB20NM60-1
STP20NM60FP
STB20NM60
STP20NM60
STW20NM60
O-247
O-220/FP
STP20NM60
STB20NM60
w20nm60
w20nm60 equivalent
p20nm60
P20NM60FP
B20NM60
V2.1
P20NM60FP equivalent
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Mosfet
Abstract: SSF10N60
Text: SSF10N60 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.69Ω (typ.) ID 10A TO-220 Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and
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SSF10N60
O-220
inN60
Mosfet
SSF10N60
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Mosfet
Abstract: SSF2N60G
Text: SSF2N60G 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.5Ω (typ.) ID 2A TO-251 Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and
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SSF2N60G
O-251
O-251ï
Mosfet
SSF2N60G
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Mosfet
Abstract: SSF2N60D2
Text: SSF2N60D2 600V N-Channel MOSFET Preliminary Main Product Characteristics VDSS 600V RDS on 3.7Ω (typ.) ID 2A TO-252 Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and
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SSF2N60D2
O-252
O-252ï
Mosfet
SSF2N60D2
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Untitled
Abstract: No abstract text available
Text: N-Channel MOSFET 600V, 0.4 A, 8.5Ω General Description Features The MDZ1N60 uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality. VDS = 600V ID = 0.4A RDS ON ≤ 8.5Ω
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MDZ1N60
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smps 5v 0.3A
Abstract: N-Channel 600V MOSFET AF01N60C low vgs mosfet to-92
Text: Preliminary Datasheet 600V N-CHANNEL MOSFET AF01N60C General Description Features The AF01N60C is 0.3A 600V N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. • 0.3A, 600V, RDS on =12Ω Typical · · Low Gate Charge : 4.4nC Typical
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AF01N60C
AF01N60C
-55oC
150oC
smps 5v 0.3A
N-Channel 600V MOSFET
low vgs mosfet to-92
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet 600V N-CHANNEL MOSFET AF01N60C General Description Features The AF01N60C is 0.3A 600V N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. • 0.3A, 600V, RDS on =12Ω Typical · · Low Gate Charge : 4.4nC Typical
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AF01N60C
-55oC
150oC
AF01N60C
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b9nk60zd
Abstract: p9nk60z N-Channel mosfet 600v 7A P9NK60ZD zener diode 3.0 b2 p9nk MOSFET IGSS 100A zener 600v zener diode 15v st 220 f1
Text: STB9NK60ZD STF9NK60ZD - STP9NK60ZD N-channel 600V - 0.85Ω - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh Power MOSFET General features Type VDSS RDS on ID Pw STB9NK60ZD 600V <0.95Ω 7A 125W STF9NK60ZD 600V <0.95Ω 7A 30W STP9NK60ZD 600V <0.95Ω 7A 125W
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STB9NK60ZD
STF9NK60ZD
STP9NK60ZD
D2PAK/TO-220FP/TO-220
STF9NK60ZD
O-220FP
O-220
b9nk60zd
p9nk60z
N-Channel mosfet 600v 7A
P9NK60ZD
zener diode 3.0 b2
p9nk
MOSFET IGSS 100A
zener 600v
zener diode 15v
st 220 f1
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coverter 24 DC a 12 DC
Abstract: igbt mosfet driver
Text: PSDM-6O / PSDM-6T Driver Modules www.schurter.com/pg86 600V IGBT/MOSFET Driver modules with integrated DC/DC converter 600V IGBT/MOSFET Driver modules with integrated DC/DC converter PSDM-6O Data transfer via transformer PSDM-6T (Data transfer via optocoupler)
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com/pg86
PSDM-0DO2-5040
PSDM-0DT2-5020
coverter 24 DC a 12 DC
igbt mosfet driver
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pj 996 diode
Abstract: HV9106 48V DC to 12v dc 40 amp converter circuit diagram smps circuit diagram HV9106P 48V DC to 12v dc converter circuit diagram 40 amp amplifier diagram n mosfet depletion 600V A510K HV9106PJ
Text: HV9106/HV9109 HV9106 HV9109 Preliminary High-Voltage Switchmode Controllers with MOSFET Ordering Information MOSFET Switch +VIN Package Outlines BVDSS RDS ON Min Max Feedback Voltage 600V 20Ω 12V 450V ±1% 49% HV9106P HV9106PJ 600V 20Ω 12V 450V ±1% 99%
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HV9106/HV9109
HV9106
HV9109
HV9106P
HV9106PJ
HV9109P
HV9109PJ
HV9106/09
HV9106/09
pj 996 diode
HV9106
48V DC to 12v dc 40 amp converter circuit diagram
smps circuit diagram
HV9106P
48V DC to 12v dc converter circuit diagram 40 amp
amplifier diagram
n mosfet depletion 600V
A510K
HV9106PJ
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1NK60Z
Abstract: STN1NK60Z 1Nk60 JESD97 STD1LNK60Z-1 STQ1NK60ZR STQ1NK60ZR-AP mosfet 600V 100A ST std1lnk60z Marking STMicroelectronics zener diode
Text: STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V - 13Ω - 0.8A - TO-92 - IPAK - SOT-223 Zener-Protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω
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STD1LNK60Z-1
STQ1NK60ZR
STN1NK60Z
OT-223
STQ1NK60ZR
1NK60Z
STN1NK60Z
1Nk60
JESD97
STD1LNK60Z-1
STQ1NK60ZR-AP
mosfet 600V 100A ST
std1lnk60z
Marking STMicroelectronics zener diode
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IRFPC40
Abstract: No abstract text available
Text: IRFPC40 Data Sheet January 2002 6.8A, 600V, 1.200 Ohm, N-Channel Power MOSFET Features • 6.8A, 600V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFPC40
IRFPC40
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4NC60
Abstract: STB4NC60-1 STP4NC60 STP4NC60FP
Text: STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60 STP4NC60FP STB4NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2.2Ω < 2.2Ω < 2.2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω
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STP4NC60
STP4NC60FP
STB4NC60-1
O-220/TO-220FP/I2PAK
STP4NC60
O-220
O-220FP
O-220)
4NC60
STB4NC60-1
STP4NC60FP
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STB4NC60A-1
Abstract: STP4NC60A STP4NC60AFP
Text: STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60A STP4NC60AFP STB4NC60A-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2Ω < 2Ω < 2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω
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STP4NC60A
STP4NC60AFP
STB4NC60A-1
O-220/TO-220FP/I2PAK
STP4NC60A
O-220
O-220FP
O-220)
STB4NC60A-1
STP4NC60AFP
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4NC60
Abstract: STB4NC60A-1 STP4NC60A STP4NC60AFP
Text: STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60A STP4NC60AFP STB4NC60A-1 VDSS RDS on ID 600V 600V 600V < 2Ω < 2Ω < 2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY
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STP4NC60A
STP4NC60AFP
STB4NC60A-1
O-220/TO-220FP/I2PAK
STP4NC60A
O-220
4NC60
STB4NC60A-1
STP4NC60AFP
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Untitled
Abstract: No abstract text available
Text: □ IXYS ADVANCE INFORMATION HiPerFET Power MOSFET 43N60 IXFN 40N60 ix f n Single MOSFET Die IXFK 43N60 IXFK 40N60 V DSS ^D25 600V 600V 600V 600V 43A 40A 43A 40A D Kr DS on 0.1 3Ü. 0.1 50. 0.1 30 0.1 50 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol
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OCR Scan
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43N60
40N60
200ns
O-264
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