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    MOSFET 1200V 30A Search Results

    MOSFET 1200V 30A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 1200V 30A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    800V 40A mosfet

    Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
    Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TLM55CT3AG 800V 40A mosfet mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TLM55CT3AG

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFN30N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1200V = 30A ≤ 350mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		PDF IXFN30N120P 300ns OT-227 E153432 30N120P 1-07-A

    IXFN30N120P

    Abstract: diode 1200v 30A 30N120P
    Text: IXFN30N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 30A Ω 350mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFN30N120P 300ns OT-227 E153432 30N120P 4-01-08-C IXFN30N120P diode 1200v 30A

    Untitled

    Abstract: No abstract text available
    Text: VDSS ID25 IXFN30N120P PolarTM Power MOSFET HiPerFETTM = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 30A Ω 350mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFN30N120P 300ns OT-227 E153432 30N120P 4-01-08-C

    Untitled

    Abstract: No abstract text available
    Text: APTMC120TAM33CTPAG VDSS = 1200V RDSon = 33mΩ max @ Tj = 25°C ID = 78A @ Tc = 25°C Triple phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features


    Original     		PDF APTMC120TAM33CTPAG

    Untitled

    Abstract: No abstract text available
    Text: APTM120A15FG Phase leg MOSFET Power Module VDSS = 1200V RDSon = 150mΩ typ @ Tj = 25°C ID = 60A @ Tc = 25°C Application VBUS • • • • Q1 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control OUT Features


    Original     		PDF APTM120A15FG performanc00 APTM120A15FGâ

    Untitled

    Abstract: No abstract text available
    Text: APTM120A15FG Phase leg MOSFET Power Module VDSS = 1200V RDSon = 150m typ @ Tj = 25°C ID = 60A @ Tc = 25°C Application VBUS •    Q1 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control OUT Features


    Original     		PDF APTM120A15FG APTM120A15FGâ

    APTM120A15FG

    Abstract: APT0502 APT0601
    Text: APTM120A15FG Phase leg MOSFET Power Module VDSS = 1200V RDSon = 150mΩ typ @ Tj = 25°C ID = 60A @ Tc = 25°C Application VBUS • • • • Q1 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control OUT Features


    Original     		PDF APTM120A15FG APTM120A15FG­ APTM120A15FG APT0502 APT0601

    MOSFET 1200v 30a

    Abstract: No abstract text available
    Text: APT12040L2LL 1200V 30A 0.400Ω POWER MOS 7 R MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT12040L2LL O-264 MOSFET 1200v 30a

    Untitled

    Abstract: No abstract text available
    Text: APT12040L2LL 1200V 30A 0.400Ω R POWER MOS 7 MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT12040L2LL O-264

    APT0406

    Abstract: APT0502 APTM120VDA57T3G "VDSS 800V" mosfet
    Text: APTM120VDA57T3G Dual Boost chopper MOSFET Power Module VDSS = 1200V RDSon = 570mΩ typ @ Tj = 25°C ID = 17A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction PFC • Interleaved PFC Features


    Original     		PDF APTM120VDA57T3G APTM120VDA57T3G­ APT0406 APT0502 APTM120VDA57T3G "VDSS 800V" mosfet

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF IXFL30N120P 300ns 30N120P 9-20-07-B

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFL30N120P RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200


    Original     		PDF IXFL30N120P 300ns 30N120P 02-12-10-D

    Untitled

    Abstract: No abstract text available
    Text: APTM120VDA57T3G Dual Boost chopper MOSFET Power Module VDSS = 1200V RDSon = 570m typ @ Tj = 25°C ID = 17A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction PFC  Interleaved PFC Features


    Original     		PDF APTM120VDA57T3G APTM120VDA57T3Gâ

    MOSFET 600v 60a

    Abstract: APTM120A15F aptm120
    Text: APTM120A15F Phase leg MOSFET Power Module VDSS = 1200V RDSon = 150mΩ max @ Tj = 25°C ID = 60A @ Tc = 25°C Application VBUS • • • • Q1 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control OUT Features S1


    Original     		PDF APTM120A15F APTM120A15F­ MOSFET 600v 60a APTM120A15F aptm120

    IXFL30N120P

    Abstract: 1200v18a 30N120P 380m
    Text: IXFL30N120P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200


    Original     		PDF IXFL30N120P 300ns 30N120P 02-12-10-D IXFL30N120P 1200v18a 380m

    IXFL30N120P

    Abstract: 1200v18a 30N120P
    Text: PolarTM Power MOSFET HiPerFETTM IXFL30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200


    Original     		PDF IXFL30N120P 300ns 30N120P 4-01-08-C IXFL30N120P 1200v18a 30N120P

    nf950

    Abstract: ixFB30N120P 30N120 30N120P
    Text: IXFB30N120P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 30A Ω 350mΩ 300ns PLUS264TM Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFB30N120P 300ns PLUS264TM 100ms 30N120P 2-12-10-D nf950 ixFB30N120P 30N120

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFB30N120P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 30A Ω 350mΩ 300ns PLUS264TM Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFB30N120P 300ns PLUS264TM 100ms 30N120P 2-12-10-D

    APT12031JLL

    Abstract: mosfet 600V 30A MOSFET 1200v 30a APT30DF120
    Text: APT12031JLL 1200V 30A 0.310Ω POWER MOS 7 R MOSFET Symbol VDSS ID SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel


    Original     		PDF APT12031JLL OT-227 APT12031JLL mosfet 600V 30A MOSFET 1200v 30a APT30DF120

    APT0502

    Abstract: APT0601 APTM120DA15G
    Text: APTM120DA15G Boost chopper MOSFET Power Module VDSS = 1200V RDSon = 150mΩ typ @ Tj = 25°C ID = 60A @ Tc = 25°C Application VBUS • • • CR1 AC and DC motor control Switched Mode Power Supplies Power Factor Correction OUT Features Q2 • G2 S2 0/VBUS


    Original     		PDF APTM120DA15G Sourc00 APTM120DA15G­ APT0502 APT0601 APTM120DA15G

    APT12031

    Abstract: No abstract text available
    Text: APT12031JLL 1200V 30A 0.310Ω R POWER MOS 7 MOSFET Symbol VDSS ID SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel


    Original     		PDF APT12031JLL OT-227 APT12031

    Untitled

    Abstract: No abstract text available
    Text: APTM120DA15G Boost chopper MOSFET Power Module VDSS = 1200V RDSon = 150mΩ typ @ Tj = 25°C ID = 60A @ Tc = 25°C Application VBUS • • • CR1 AC and DC motor control Switched Mode Power Supplies Power Factor Correction OUT Features Q2 • G2 S2 0/VBUS


    Original     		PDF APTM120DA15G APTM120DA15Gâ