32N12
Abstract: 32N120P
Text: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET IXFL32N120P VDSS ID25 RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions
|
Original
|
PDF
|
IXFL32N120P
300ns
100ms
32N120P
1-22-10-C
32N12
|
APTM120DA30CT1G
Abstract: APT0406 APT0502 transistor 20a
Text: APTM120DA30CT1G VDSS = 1200V RDSon = 300mΩ typ @ Tj = 25°C ID = 31A @ Tc = 25°C Boost chopper MOSFET + SiC chopper diode Power Module Application 5 6 11 • • • CR1 AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features
|
Original
|
PDF
|
APTM120DA30CT1G
APTM120DA30CT1G
APT0406
APT0502
transistor 20a
|
Untitled
Abstract: No abstract text available
Text: APTM120DA30CT1G VDSS = 1200V RDSon = 300m typ @ Tj = 25°C ID = 31A @ Tc = 25°C Boost chopper MOSFET + SiC chopper diode Power Module Application 5 6 11 • CR1 AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features
|
Original
|
PDF
|
APTM120DA30CT1G
|
Untitled
Abstract: No abstract text available
Text: APTM120DA30CT1G VDSS = 1200V RDSon = 300mΩ typ @ Tj = 25°C ID = 31A @ Tc = 25°C Boost chopper MOSFET + SiC chopper diode Power Module Application 5 6 11 • • • CR1 AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features
|
Original
|
PDF
|
APTM120DA30CT1G
|
Untitled
Abstract: No abstract text available
Text: APTM120A20DG Phase leg with Series diodes MOSFET Power Module VBUS G1 S1 G2 OUT 0/VBUS S2 VDSS = 1200V RDSon = 200m typ @ Tj = 25°C ID = 50A @ Tc = 25°C Application • Zero Current Switching resonant mode Features Power MOS 7 MOSFETs - Low RDSon
|
Original
|
PDF
|
APTM120A20DG
APTM120A20DG
|
APTM120U20D
Abstract: APTM120A20D
Text: APTM120A20D Phase leg with Series diodes MOSFET Power Module VDSS = 1200V RDSon = 200mΩ max @ Tj = 25°C ID = 50A @ Tc = 25°C Application • Zero Current Switching resonant mode Features • • • • G1 VBUS 0/VBUS OUT Power MOS 7 MOSFETs - Low RDSon
|
Original
|
PDF
|
APTM120A20D
APTM120U20D
APTM120A20D
|
Untitled
Abstract: No abstract text available
Text: APTM120A20SG Phase leg Series & parallel diodes MOSFET Power Module VBUS Q1 G1 OUT S1 Q2 G2 0/VBUS S2 VDSS = 1200V RDSon = 200mΩ typ @ Tj = 25°C ID = 50A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
|
Original
|
PDF
|
APTM120A20SG
APTM120A20SG
|
Untitled
Abstract: No abstract text available
Text: APT34M120J 1200V, 35A, 0.29Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
|
Original
|
PDF
|
APT34M120J
E145592
|
APT34M120J
Abstract: MIC4452
Text: APT34M120J 1200V, 34A, 0.30Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
|
Original
|
PDF
|
APT34M120J
E145592
APT34M120J
MIC4452
|
APT34M120J
Abstract: No abstract text available
Text: APT34M120J 1200V, 35A, 0.29Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
|
Original
|
PDF
|
APT34M120J
E145592
APT34M120J
OT-227
|
APT34M120J
Abstract: MIC4452
Text: APT34M120J 1200V, 35A, 0.29Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
|
Original
|
PDF
|
APT34M120J
E145592
APT34M120J
MIC4452
|
Untitled
Abstract: No abstract text available
Text: APT34M120J 1200V, 34A, 0.30Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
|
Original
|
PDF
|
APT34M120J
E145592
|
Untitled
Abstract: No abstract text available
Text: APTM120A20SG Phase leg Series & parallel diodes MOSFET Power Module VBUS Q1 G1 OUT S1 Q2 G2 0/VBUS S2 G1 VBUS 0/VBUS OUT S1 S2 G2 VDSS = 1200V RDSon = 200mΩ typ @ Tj = 25°C ID = 50A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies
|
Original
|
PDF
|
APTM120A20SG
APTM120A20SG
|
APT0406
Abstract: APT0502 APTM120DA30T1G mosfet 1200V 25A
Text: APTM120DA30T1G VDSS = 1200V RDSon = 300mΩ typ @ Tj = 25°C ID = 31A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • • • CR1 3 4 Q2 NTC Features • 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction
|
Original
|
PDF
|
APTM120DA30T1G
APT0406
APT0502
APTM120DA30T1G
mosfet 1200V 25A
|
|
|
Untitled
Abstract: No abstract text available
Text: APTM120DA30T1G VDSS = 1200V RDSon = 300mΩ typ @ Tj = 25°C ID = 31A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • • • CR1 3 4 Q2 NTC Features • 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction
|
Original
|
PDF
|
APTM120DA30T1G
|
Untitled
Abstract: No abstract text available
Text: APT32F120J 1200V, 33A, 0.32Ω Max, trr ≤430ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
|
Original
|
PDF
|
APT32F120J
430ns
OT-227
|
APT32F120J
Abstract: mosfet h bridge 25a MIC4452
Text: APT32F120J 1200V, 32A, 0.35Ω Max, trr ≤430ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
|
Original
|
PDF
|
APT32F120J
430ns
APT32F120J
mosfet h bridge 25a
MIC4452
|
mosfet h bridge 25a
Abstract: APT32F120J MIC4452
Text: APT32F120J 1200V, 33A, 0.32Ω Max, trr ≤430ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
|
Original
|
PDF
|
APT32F120J
430ns
mosfet h bridge 25a
APT32F120J
MIC4452
|
Untitled
Abstract: No abstract text available
Text: APT32F120J 1200V, 32A, 0.35Ω Max, trr ≤430ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
|
Original
|
PDF
|
APT32F120J
430ns
|
Untitled
Abstract: No abstract text available
Text: APT32F120J 1200V, 33A, 0.32Ω Max, trr ≤430ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
|
Original
|
PDF
|
APT32F120J
430ns
|
buck 800v igbt
Abstract: APTM120DSK57T3 D17A
Text: APTM120DSK57T3 Dual Buck chopper MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies 13 14 Q1 Q2 11 18 22 7 19 10 23 CR1 29 8 30 CR2 31 15 32 16 R1 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 32 13 2 3 4 7 8 VDSS = 1200V
|
Original
|
PDF
|
APTM120DSK57T3
APTM120DSK57T3
buck 800v igbt
APTM120DSK57T3
D17A
|
morocco p3
Abstract: mosfet 1200V 40A IGBT Transistor 1200V, 25A mosfet 1200V 25A ir igbt 1200V 40A STTA2512P TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE IGBT Transistor 2.5a transistor marking p3 transistor P1 P 12
Text: STTA2512P TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS 25A VRRM 1200V trr typ 60ns VF (max) 1.9V K A IF(AV) FEATURES AND BENEFITS A ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN
|
Original
|
PDF
|
STTA2512P
morocco p3
mosfet 1200V 40A
IGBT Transistor 1200V, 25A
mosfet 1200V 25A
ir igbt 1200V 40A
STTA2512P
TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
IGBT Transistor 2.5a
transistor marking p3
transistor P1 P 12
|
Untitled
Abstract: No abstract text available
Text: r z 7 SCS-THOMSON LI OT iOûS 7#® 5 STTA5012T(V 112 ^ TURBOSWITCH “A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av ) 25A V rrm 1200V trr (typ) 65ns V f (max) 1.85 V STTA5012T(V)1 STTA5012T(V)2 FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE
|
OCR Scan
|
PDF
|
STTA5012T
|
mosfet 1200V 25A
Abstract: No abstract text available
Text: r z T SGS-THOMSON ^ 7 # K TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f av 25A V rrm 1200V trr (typ) 60ns Vf PRELIMINARY DATA 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. . VERY LOW OVERALL POWER LOSSES IN
|
OCR Scan
|
PDF
|
|
