IXFL32N120P Search Results

IXFL32N120P Price and Stock

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Littelfuse Inc IXFL32N120P MOSFET N-CH 1200V 24A I5PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFL32N120P	Tube			300	1 - 10 - 100 - 1000 $41.68937 10000 $41.68937	Buy Now
Newark	IXFL32N120P	Bulk			300	1 - 10 - 100 $43.69 1000 $43.69 10000 $43.69	Buy Now
RS	IXFL32N120P	Bulk		8 Weeks	25	1 - 10 - 100 $64.48 1000 $64.48 10000 $64.48	Get Quote
IXYS Corporation IXFL32N120P MOSFETs 32 Amps 1200V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFL32N120P					1 - 10 - 100 - 1000 $44.06 10000 $44.06	Get Quote
Future Electronics	IXFL32N120P	Tube		26 Weeks	25	1 - 10 - 100 $47.23 1000 $47.23 10000 $47.23	Buy Now
TTI	IXFL32N120P	Tube			300	1 - 10 - 100 - 1000 $41.72 10000 $41.72	Buy Now
TME	IXFL32N120P		25		1	1 $64.1 10 $50.86 100 $47.49 1000 $47.49 10000 $47.49	Buy Now
IXYS Integrated Circuits Division IXFL32N120P MOSFET DIS.24A 1200V N-CH ISOPLUSI5-PAC POLAR THT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXFL32N120P					1 $76.96617 10 $76.96617 100 $71.931 1000 $71.931 10000 $71.931	Get Quote

IXFL32N120P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFL32N120P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 24A I5-PAK		Original	PDF

IXFL32N120P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
32N12 Abstract: 32N120P Text: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET IXFL32N120P VDSS ID25 RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions	Original	PDF	IXFL32N120P 300ns 100ms 32N120P 1-22-10-C 32N12
Untitled Abstract: No abstract text available Text: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL32N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	PDF	IXFL32N120P 300ns 338B2
123B16 Abstract: No abstract text available Text: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL32N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings	Original	PDF	IXFL32N120P 300ns 338B2 123B16
Untitled Abstract: No abstract text available Text: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFL32N120P RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXFL32N120P 300ns 100ms 32N120P 1-22-10-C
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	PDF	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P