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    STMicroelectronics TMMDB3

    DIAC 28-36V 2A MINIMELF
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    DigiKey TMMDB3 Reel 160,000 2,500
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    Avnet Americas TMMDB3 Reel 7,500 11 Weeks 2,500
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    TMMDB3 Reel 11 Weeks 10,000
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    Mouser Electronics TMMDB3 17,784
    • 1 $0.45
    • 10 $0.281
    • 100 $0.136
    • 1000 $0.118
    • 10000 $0.072
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    Newark TMMDB3 Cut Tape 2,509 5
    • 1 $0.351
    • 10 $0.249
    • 100 $0.118
    • 1000 $0.094
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    TMMDB3 Reel 2,500
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    STMicroelectronics TMMDB3 17,784 1
    • 1 $0.44
    • 10 $0.28
    • 100 $0.13
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    TME TMMDB3 3,150 1
    • 1 $0.305
    • 10 $0.229
    • 100 $0.112
    • 1000 $0.077
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    ComSIT USA TMMDB3 8,531
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    NexGen Digital TMMDB3 5
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    Chip 1 Exchange TMMDB3 786
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    Avnet Silica TMMDB3 117,500 12 Weeks 2,500
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    Chip-Germany GmbH TMMDB3 2,268
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    Component Electronics, Inc TMMDB3 5
    • 1 $1.54
    • 10 $1.54
    • 100 $1.15
    • 1000 $1
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    EBV Elektronik TMMDB3 25,000 12 Weeks 2,500
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    Win Source Electronics TMMDB3 284,069
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    MACOM MMDB35-0402

    DIODE,SRD-BEAMLEAD-PACKAGE, 0402
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    DigiKey MMDB35-0402 Tray 450 25
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    Mouser Electronics MMDB35-0402
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    Richardson RFPD MMDB35-0402 1
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    MACOM MMDB30-0402

    DIODE,SRD-BEAMLEAD-PACKAGE, 0402
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    DigiKey MMDB30-0402 Tray 75 25
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    Mouser Electronics MMDB30-0402
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    Richardson RFPD MMDB30-0402 1
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    MACOM MMDB45-B11

    DIODE,SRD,BEAMLEAD,B11
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    DigiKey MMDB45-B11 Tray 25 25
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    Mouser Electronics MMDB45-B11
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    Richardson RFPD MMDB45-B11 1
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    STMicroelectronics TMMDB3TG

    DIAC 30-34V 2A MINIMELF
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    DigiKey TMMDB3TG Digi-Reel 1
    • 1 $0.49
    • 10 $0.299
    • 100 $0.49
    • 1000 $0.12652
    • 10000 $0.12652
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    TMMDB3TG Cut Tape 1
    • 1 $0.49
    • 10 $0.299
    • 100 $0.49
    • 1000 $0.12652
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    TMMDB3TG Reel 2,500
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    Avnet Americas TMMDB3TG Reel 11 Weeks 10,000
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    Mouser Electronics TMMDB3TG 6,909
    • 1 $0.5
    • 10 $0.305
    • 100 $0.147
    • 1000 $0.131
    • 10000 $0.078
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    STMicroelectronics TMMDB3TG 6,909 1
    • 1 $0.49
    • 10 $0.3
    • 100 $0.14
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    TME TMMDB3TG 3,083 1
    • 1 $0.38
    • 10 $0.285
    • 100 $0.156
    • 1000 $0.098
    • 10000 $0.086
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    Avnet Silica TMMDB3TG 522,500 12 Weeks 2,500
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    EBV Elektronik TMMDB3TG 12 Weeks 2,500
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    MMDB Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMDB30-B11 Metelics Beam Lead Step Recovery Diodes Scan PDF
    MMDB35-B11 Metelics Beam Lead Step Recovery Diodes Scan PDF
    MMDB45-B11 Metelics Beam Lead Step Recovery Diodes Scan PDF

    MMDB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MMDB35B11 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.20p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleBeamL Mounting StyleS


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    MMDB35B11 Voltage30 PDF

    ZENER DIODE z91

    Abstract: ZNR 10K 271 TRANSISTOR REPLACEMENT ECG triac cf 406 panasonic ZNR MOV TRANSISTOR REPLACEMENT ECG 130 X2 MKP SH mr 504 diode SN2 357 hv9931 LED driver
    Text: Supertex inc. HV9931DB1v2 LED Driver Demo Board Input 120VAC // Output 350mA, 40V 14W General Description The HV9931 LED driver is primarily targeted at low to medium power LED lighting applications where galvanic isolation of the LED string is not an essential requirement.


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    HV9931DB1v2 120VAC 350mA, HV9931 ZENER DIODE z91 ZNR 10K 271 TRANSISTOR REPLACEMENT ECG triac cf 406 panasonic ZNR MOV TRANSISTOR REPLACEMENT ECG 130 X2 MKP SH mr 504 diode SN2 357 hv9931 LED driver PDF

    PME26605001AA

    Abstract: PMG33302001AA SL32N SL36Z sl32s mmc-1 pentium PMG26602001AA
    Text: Mobile Pentium II Processor Specification Update Release Date: January 25, 1999 Order Number: 243887-007 The Mobile Pentium II processor or the Intel® Pentium II Processor Mobile Module may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current


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    PDF

    Coin based mobile battery charger circuit diagram

    Abstract: Coin Based Mobile Phone Charger MC13718 coin operated mobile phone charger MC13777 GSM based motor control circuit diagram coin box mobile charger circuit diagram circuit diagram of GSM based home automation system gsm based home security system automation GSM circuit diagram project
    Text: Freescale Semiconductor Product Brief I250-21/D Rev. 1.2, 08/2004 2.5G Innovative Convergence i.250-21 Platform System Overview 1 Executive Summary To provide advanced features and applications in the GSM/GPRS arena, Freescale Semiconductor offers the


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    I250-21/D GSM850/GSM900/DCS/PCS Coin based mobile battery charger circuit diagram Coin Based Mobile Phone Charger MC13718 coin operated mobile phone charger MC13777 GSM based motor control circuit diagram coin box mobile charger circuit diagram circuit diagram of GSM based home automation system gsm based home security system automation GSM circuit diagram project PDF

    MMDB914

    Abstract: MMBD914
    Text: 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 MMBD914 Features • • • Low Current Leakage Low Cost Small Outline Surface Mount Package 500mW 100 Volt Silicon Epitaxial Diode C Pin Configuration Top View 5D SOT-23


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    MMBD914 500mW OT-23 MMDB914 MMBD914 PDF

    MSPD2018

    Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
    Text: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800


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    foc17091 MSPD2018 MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode PDF

    transistor c1419

    Abstract: transistor C1162 equivalent of transistor c4751 c1162 transistor npn c1008 C1449 transistor intel 945 motherboard schematic diagram c1419 transistor c1295 battery transistor c1394
    Text: Intel Xeon Processor with 512 KB L2 Cache and Intel® E7500 Chipset Platform Design Guide March 2002 Document Number: 298649-002 Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any


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    E7500 CK408B GPIO27 GPIO28 transistor c1419 transistor C1162 equivalent of transistor c4751 c1162 transistor npn c1008 C1449 transistor intel 945 motherboard schematic diagram c1419 transistor c1295 battery transistor c1394 PDF

    MMDB7000

    Abstract: Sx1319 saronix gull wing DIL14 SMD crystal 270 MMDB
    Text: SaRonix Voltage Controlled Crystal Oscillator Technical Data Sx1310 / Sx1319 / Sx1510 / Sx1519 Series ACTUAL SIZE Description A voltage controlled crystal oscillator with a wide range of performance options to 125 MHz. The devices are packaged in either standard 14-pin or 8-pin


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    Sx1310 Sx1319 Sx1510 Sx1519 14-pin MMDB7000 DS-162 MMDB7000 saronix gull wing DIL14 SMD crystal 270 MMDB PDF

    MMDB7000

    Abstract: No abstract text available
    Text: SaRonix Voltage Controlled Crystal Oscillator Technical Data 3V, 5V HCMOS S1310 / 1510 Series ACTUAL SIZE Frequency Range: 32 MHz to 120 MHz Frequency Stability: ±25 or ±50 ppm over all conditions: operating temperature, voltage change, load change, calibration tolerance, aging,


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    S1310 MMDB7000 DS-162 PDF

    SN2 357

    Abstract: triac cf 406 ZNR 10K 271 TRANSISTOR REPLACEMENT ECG ERJ-6ENF1001V HV9931 ZENER DIODE z91 Vishay Q81 Heatsink-TO220 transistor pnp ecg 180
    Text: Supertex inc. HV9931DB2v1 LED Driver Demo Board Input 230VAC // Output 350mA, 40V 14W General Description The HV9931 LED driver is primarily targeted at low to medium power LED lighting applications where galvanic isolation of the LED string is not an essential requirement.


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    HV9931DB2v1 230VAC 350mA, HV9931 SN2 357 triac cf 406 ZNR 10K 271 TRANSISTOR REPLACEMENT ECG ERJ-6ENF1001V ZENER DIODE z91 Vishay Q81 Heatsink-TO220 transistor pnp ecg 180 PDF

    pentium II 2d matrix mark

    Abstract: pme266 PMD30005002AA 245110 architecture of pentium microprocessor intel pentium IV microprocessor pin diagram smm 300 AP-825 mmc-1 pentium Cache Intel Pentium 4 Processors
    Text: ® Mobile Intel Pentium II Processor Specification Update Release Date: November 2001 Order Number: 243887-035 The Mobile Pentium® II processor may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are documented in this Specification Update.


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    300PE 266PE pentium II 2d matrix mark pme266 PMD30005002AA 245110 architecture of pentium microprocessor intel pentium IV microprocessor pin diagram smm 300 AP-825 mmc-1 pentium Cache Intel Pentium 4 Processors PDF

    smmd-840

    Abstract: MMD-810 MMD832-0805-2 SMMD837-SOD323 MMDB30-0402 MMD-835
    Text: Silicon Step Recovery Diodes Description Features The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming.


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    MIL-PRF-19500 MIL-PRF-38534 smmd-840 MMD-810 MMD832-0805-2 SMMD837-SOD323 MMDB30-0402 MMD-835 PDF

    MMD0840

    Abstract: MMD810-T86 MMDB30-B11 mmdb30-0402 MMDB30-E28 MMD820-0805-2 SMMD-840 MMD820-E28 SMMD840-SOD323 MMD805-0805-2
    Text: Silicon Step Recovery Diodes Description Features The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming.


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    MIL-PRF-19500 MIL-PRF-38534 MMD0840 MMD810-T86 MMDB30-B11 mmdb30-0402 MMDB30-E28 MMD820-0805-2 SMMD-840 MMD820-E28 SMMD840-SOD323 MMD805-0805-2 PDF

    243337

    Abstract: PMD300 PMD26605001AA SL265 05002AB Pentium II MMC-1
    Text: Pentium II Processor Specification Update Release Date: July 1998 Order Number: 243337-016 The Pentium II processor may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are documented in this Specification


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    PDF

    Sx1319

    Abstract: No abstract text available
    Text: SaRonix Voltage Controlled Crystal Oscillator Technical Data Sx1310 / Sx1319 / Sx1510 / Sx1519 Series ACTUAL SIZE Description A voltage controlled crystal oscillator with a wide range of performance options to 125 MHz. The devices are packaged in either standard 14-pin or 8-pin


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    Sx1310 Sx1319 Sx1510 Sx1519 14-pin MMDB7000 DS-162 PDF

    Sx1319

    Abstract: SARONIX 94 mmdb7000 DIL14 Crystal oscillator DIL14
    Text: SaRonix Voltage Controlled Crystal Oscillator Technical Data Sx1310 / Sx1319 / Sx1510 / Sx1519 Series ACTUAL SIZE Description A voltage controlled crystal oscillator with a wide range of performance options to 125 MHz. The devices are packaged in either standard 14-pin or 8-pin


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    Sx1310 Sx1319 Sx1510 Sx1519 14-pin DS-162 MMDB7000 SARONIX 94 mmdb7000 DIL14 Crystal oscillator DIL14 PDF

    MSPD2018

    Abstract: m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345
    Text: Microwave Diodes Schottky Varactor PIN Step Recovery Planar Tunnel MOS / MIS Capacitors Short Form Catalog 2006 About Aeroflex / Metelics The Experience and Resources to Deliver the Technological Edge In many electronics applications, there is simply no margin for


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    A17084 MSPD2018 m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345 PDF

    MMD0840

    Abstract: mmd805 SMMD-840 SMMD-805 MMD-810 step recovery diode 832 MMD-840 MMD-835 MMD-805 SMMD830
    Text: Spice Model for Metelics Step Recovery Diodes 1 of 2 Spice does not include the Transition Time in the diode model. The parameter TT in spice is the minority carrier life time. Model for MMD805 .MODEL D_805 IS=500.0E-15 N=1.3 RS=0.13 CJ0=4.55E-12 VJ=0.5 M=0.235 XTI=3.0 EG=1.12


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    MMD805 0E-15 55E-12 10E-6 30E-9) MMD-805, SMMD805 MMD-810, SMMD810 MMD-820, MMD0840 mmd805 SMMD-840 SMMD-805 MMD-810 step recovery diode 832 MMD-840 MMD-835 MMD-805 SMMD830 PDF

    MMDB7000

    Abstract: S1510 crystal 4-pin thru-hole
    Text: SaRonix Voltage Controlled Crystal Oscillator Technical Data 3.3 & 5V, HCMOS S1310 / S1510 Series ACTUAL SIZE Description A voltage controlled crystal oscillator with a wide range of performance options available up to 125 MHz. This economic part is designed for phaselocked loop circuits commonly encountered in telecom, LAN and wireless data,


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    S1310 S1510 dat08 MMDB7000 DS-162 MMDB7000 crystal 4-pin thru-hole PDF

    pentium mmx specification update

    Abstract: AP-825 PMD30005002AA T14B 243887 PMD26605002AB mmc-1 pentium
    Text: Mobile Pentium II Processor Specification Update Release Date: October 1998 Order Number: 243887-003 The Mobile Pentium II processor or the Intel® Pentium II Processor Mobile Module may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current


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    150ns pentium mmx specification update AP-825 PMD30005002AA T14B 243887 PMD26605002AB mmc-1 pentium PDF

    H20-080

    Abstract: 000331 CS1232 QFII CS1232-U DS1232 GQD3317 General Semiconductor SM Crystal Semiconductor
    Text: C R YS TA L S E M I C O N D U C T O R mm I 3flE D 2SML.3S4 Q 0 G 3 3 1 S I SCYS I a ia c w Æ S f'£ m a m r a r e s y ' E * B E s ia M s s ra u a s b e s t Semiconductor Corporation Micromonitor Die T - ì o S - [ 'h Features General Description • Halts and restarts an out-of-control


    OCR Scan
    Q0G331S DS1232 CS1232 DS68F1 254fci324 00033EQ CS1232-U H20-080 000331 QFII CS1232-U DS1232 GQD3317 General Semiconductor SM Crystal Semiconductor PDF

    Untitled

    Abstract: No abstract text available
    Text: M Æ * Chatsworth, CA m M i c m s e m i P rog ress P ow ered b y T echnology 9261 O w ensm outh Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (81 8 )7 0 1-4 9 3 9 Features Low C urrent Leakage Low C ost Sm all O utline Surface M ount Package 500mW 100 Volt


    OCR Scan
    500mW MMBD914 PDF

    MMDB30-B11

    Abstract: sampling gate STEP RECOVERY DIODES CPA01 MMDB35-B11 MMDB45-B11 B1135 "Microwave Diodes" MMDB35B11
    Text: FEATURES • Low Inductance Rugged Beam Lead Construction • Transition Times Less Than 30 picoseconds in 50 n System • Oxide and Polyimide Passivation • Non-Destruct Transition Time Testing Available MAXIMUM RATINGS Total Power Dissipation. 250 mWat +25°C


    OCR Scan
    bOS13S2 -65to MMDB35-B11 MMDB45-B11 TFP-1034 015pF MMDB30-B11 sampling gate STEP RECOVERY DIODES CPA01 B1135 "Microwave Diodes" MMDB35B11 PDF

    MMDB-45-B11

    Abstract: MMDB30-B11
    Text: BEAM LEAD STEP RECOVERY DIODES i metelics CORPORATION •.- •.• •C .: • FEATURES •'.*! -, ' . - ■' • Low Inductance Rugged Beam Lead Construction • Transition Times Less Than 30 picoseconds in 50 n System • Oxide and Polyimide Passivation


    OCR Scan
    dioMMDB35-B11 MMDB45-B11 MMDB-45-B11 MMDB30-B11 PDF